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Si avalanche photodetector

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400-1100nm silicon Si avalanche balanced detector BAPD series

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400-1100nm Si Avalanche Balanced Detector 100MHz Add to Cart

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Silicon Si High Sensitivity Avalanche Photodiode APD Module C12702 Series 200-1000nm

APD is a photodiode with internal gain generated by applying reverse voltage. They have a higher signal-to-noise ratio (SNR) than PIN photodiodes, as well as fast time response, low dark current, and high sensitivity. The spectral response range is usually in the range of 200-1150 nm. C12702-12 is a short wave type with an effective area of Φ 3.0mm.

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Silicon Si High Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18

The photosensitive surface diameter of C30902EH high-performance silicon avalanche photodiode (APD) is 0.5 mm, which is suitable for biomedical and analytical applications. This Si APD is designed as a dual diffusion "penetrating" structure, providing high responsivity between 400 and 1000 nm, as well as extremely fast rise and fall times at all wavelengths. The responsivity of the device is independent of modulation frequencies up to approximately 800 MHz. The detector chip adopts a modified TO-18 package and is sealed behind a flat glass window.

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Si High-Performance Avalanche Photodiode (APD) 400-1000nm 0.5mm TO-18 Add to Cart

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  • 10+ 10 Years of Experience
  • 50 50 + Countries Bussiness
  • 10000 10k + Diodes sold worldwide
  • 30 30+ Invention patent
  • 10 10+ Advanced Optical Solutions

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