InAs/InAsSb II type superlattice T2SL photoconductive (PC)/photovoltaic (PV) detector 1.6-15um

Type II superlattice two-stage thermoelectric cooled infrared photodetector with excellent parameters. 3 ° wedge-shaped sapphire window (wAl2O3) prevents unnecessary interference effects. Various MWIR and LWIR type II superlattice (T2SL) photoconductive (PC) and photovoltaic (PV) detectors under development can operate at room temperature or under thermoelectric cooling. These detectors can achieve excellent parameters without the need for low-temperature cooling (LN2). They do not contain mercury or cadmium and comply with the RoHS directive. Superlattice materials are multilayer films formed by alternating growth of two different components in thin layers ranging from several nanometers to tens of nanometers, maintaining strict periodicity. In fact, they are specific forms of layered fine composite materials. Superlattice materials are classified into excellent, second, and third types of superlattices based on the type of heterojunction that forms them. Superlattices can be divided into the following types: 1. Constituent superlattices, 2. Doped superlattices, 3. Multidimensional superlattices, and 4. Strain superlattice

InAs/InAsSb infrared photovoltaic detector with two-stage TE cooling 2.0-5.5um PVA-2TE series

The PVA-2T series is a two-stage TE cooled infrared photovoltaic detector based on InAs1-x Sbx alloy. This device has a temperature stability of up to 300 ℃ and high mechanical durability, and is free of mercury and cadmium, meeting RoHS requirements. Equipped with a 3 ° wedge-shaped sapphire (wAl2O3) window to prevent unnecessary interference.

Indium arsenide InAs/indium arsenide antimony InAsSb optical immersion infrared photovoltaic detector two-stage TE cooling 2.0-5um PVIA-2TE series

The PVIA-2TE series is a two-stage TE cooled infrared photovoltaic detector based on InAsSb alloy. This device has a temperature stability of up to 300 ℃ and high mechanical durability, and is free of mercury and cadmium, meeting RoHS requirements. Equipped with a 3 ° wedge-shaped sapphire (wAl2O3) window to prevent unnecessary interference.

InAs/InAsSb optical immersion infrared uncooled photovoltaic detector 2.0-5.5um PVIA series

The PVIA series is a non cooled infrared photovoltaic detector based on InAs1 xSbx alloy, which enhances the performance of the detector through optical immersion. This device has a temperature stability of up to 300 ℃ and high mechanical durability, and is free of mercury and cadmium, meeting RoHS requirements.

Indium arsenide InAs infrared photovoltaic detector 3-3.35um (P10090 series/P7163)

InAs indium arsenide photovoltaic detectors, like PbS lead sulfide photoconductive detectors, have high sensitivity in the infrared region around 3 μ m, low noise, high speed, and high reliability. This series is a new InAs photovoltaic detector series that provides lower noise than our traditional products. Xiaoxiao Photon offers various types to choose from, including non cooled, thermoelectric cooled, and high-performance liquid nitrogen cooled.

Indium arsenide InAs/InAsSb uncooled infrared photovoltaic detector 2-5.5um PVA series

The PVA series is a non cooled infrared photovoltaic detector based on InAs1 xSbx alloy. This device has a temperature stability of up to 300 ℃ and high mechanical durability, and is free of mercury and cadmium, meeting RoHS requirements