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FP Laser Diode
The 1550-2000nm FP diode launched by Ideal Photonics is a fast recovery diode manufactured using epitaxial technology. It has the characteristics of short reverse recovery time, fast switching speed, and low power consumption, and is widely used in high-frequency switching circuits, power management, and other fields.
Reverse Recovery Time typically ranges from tens of nanoseconds (ns) to hundreds of nanoseconds, much faster than ordinary rectifier diodes and suitable for high-frequency applications.
The 1360-1550nm FP diode launched by Ideal Photonics is a fast recovery diode manufactured using epitaxial technology. It has the characteristics of short reverse recovery time, fast switching speed, and low power consumption, and is widely used in high-frequency switching circuits, power management, and other fields.
Reverse Recovery Time typically ranges from tens of nanoseconds (ns) to hundreds of nanoseconds, much faster than ordinary rectifier diodes and suitable for high-frequency applications.
The 1290-1360nm FP diode launched by Ideal Photonics is a fast recovery diode manufactured using epitaxial technology. It has the characteristics of short reverse recovery time, fast switching speed, and low power consumption, and is widely used in high-frequency switching circuits, power management, and other fields.
Reverse Recovery Time typically ranges from tens of nanoseconds (ns) to hundreds of nanoseconds, much faster than ordinary rectifier diodes and suitable for high-frequency applications.
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