InGaAs Bias Photodetector
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800-1700nm high-speed indium gallium arsenide biased photodetector
Xiaoxiao Photon's high-speed indium gallium arsenide biased photodetector covers a photosensitive range of 800nm~1700nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for intensity time waveform measurement of high-speed laser pulses or emission events, with excellent performance and high cost-effectiveness. It provides comprehensive technical support and is commonly used in near-infrared light measurement.
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500-2600nm conventional indium gallium arsenide biased photodetector
Xiaoxiao Photon's indium gallium arsenide biased photodetector has a photosensitive range covering 500nm~2600nm, extremely low noise, fast response, no gain, low cost, suitable for conventional optoelectronic detection applications, excellent performance, high cost-effectiveness, and provides comprehensive technical support. It is commonly used for visible and infrared light measurement.
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American EOT high-speed photodetector (InGaAs/Si/GaAs) 830/1300/2000nm
Xiaoxiao Photon Company represents EOT (Electro Optics Technology) in the United States for all products
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500-2600nm indium gallium arsenide biased photodetector - conventional type
Xiaoxiao Photon's indium gallium arsenide biased photodetector has a photosensitive range covering 500nm~2600nm, extremely low noise, fast response, no gain, low cost, suitable for conventional optoelectronic detection applications, excellent performance, high cost-effectiveness, and provides Quan directional technical support. It is commonly used for visible light and infrared light measurement. Product features: The photosensitive range covers 500nm~2600nm and is commonly used as a bias type detector for visible and infrared light measurement. It has extremely low noise, fast response, no gain and low cost, and is suitable for conventional optoelectronic detection applications. It has excellent performance and high cost performance, and can provide non-standard customization services. Application areas: Visible light and infrared light measurement. Main parameters: Parameter values, wavelength range: 500-1700nm, 900-1700nm, 800-1700nm, 900-2600nm, photosensitive size: Φ 1.0mm, Φ 1.0mm, Φ 2.0mm, Φ 0.5mm, Φ 1.0mm, bandwidth range: 70MHz, 35MHz, 11.7MHz, 20.6MHz, 14MHz rise time (@ 50 Ω), 5ns10ns30ns17ns25nsNEP2.0 × 10-14W/H2.5 × 10-14W/22.5 × 10-14W/H z1/21.3 × 10-13 W/Hz 1/21.0 × 10-12 W/Hz 1/21.5 × 10-
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500-1700nm InGaAs Bias Photodetector Active Area Size Φ1.0mm Rise Time 5ns
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800-1700nm Indium Gallium Arsenide Bias Photodetector, Sensitive Area Size Φ2.0mm, Rise Time 30ns
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900-1700nm InGaAs Bias Photodetector Active Area Size Φ1.0mm Rise Time10ns
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900-2600nm InGaAs Bias Photodetector, Photosensitive Area Φ1.0mm, Rise Time 25ns
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900-2600nm InGaAs Bias Photodetector, Active Area Size Φ0.5mm, Rise Time 17ns
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500-1700nm InGaAs Bias Photodetector Active Area Size Φ1.0mm Rise Time 5ns
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800-1700nm Indium Gallium Arsenide Bias Photodetector, Sensitive Area Size Φ2.0mm, Rise Time 30ns
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900-1700nm InGaAs Bias Photodetector Active Area Size Φ1.0mm Rise Time10ns
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900-2600nm InGaAs Bias Photodetector, Photosensitive Area Φ1.0mm, Rise Time 25ns
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900-2600nm InGaAs Bias Photodetector, Active Area Size Φ0.5mm, Rise Time 17ns
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