IdealPhotonics' InGaAs bias photodetector has a photosensitive range from 500nm to 2600nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for conventional photodetector applications, offering excellent performance and high cost-performance ratio. Technical support is available across various domains, commonly used in visible and infrared light measurements
产品特点Photosensitive range covers 500nm to 2600nm, commonly used in visible and infrared light measurements、 Bias-type detector, extremely low noise, fast response, no gain、 Low cost, suitable for conventional photodetector applications、 Excellent performance, high cost-performance ratio, and technical support across various domains、 Custom services available for non-standard applications
产品货号E80043169
应用领域Visible and infrared light measurements
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Sherry
电话:16628709332
邮箱:moli@microphotons.com
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Main Parameters
Parameter | Value | ||||
Wavelength Range | 500-1700nm | 900-1700nm | 800-1700nm | 900-2600nm | |
Active area | Φ1.0mm | Φ1.0mm | Φ2.0mm | Φ0.5mm | Φ1.0mm |
Bandwidth Range | 70MHz | 35MHz | 11.7MHz | 20.6MHz | 14MHz |
Rise Time (@50Ω) | 5ns | 10ns | 30ns | 17ns | 25ns |
NEP | 2.0 × 10-14W/H z1/2 | 2.5 × 10-14W/H z1/2 | 1.3 × 10-13W/H z1/2 | 1.0 × 10-12W/H z1/2 | 1.5 × 10-12W/Hz1/2 |
Dark Current | 1.5nA(Typ.)/10 nA(Max) | 1.0nA(Typ.)/25 nA(Max) | 55nA(Typ.)/20 0nA(Max) | 2uA(Typ.)/20u A(Max) | 5uA(Typ.)/40uA(Max) |
Junction Capacitance | 50pF(Typ.) | 80pF(Typ.) | 100pF(Typ.) | 140pF(Typ.) | 500pF(Typ.) |
Bias Voltage | 5V | 1.8V | |||
Output Current | 0~5mA | ||||
Output Voltage | ~9V(Hi-Z); ~170 mV(50Ω) | ||||
Light-Sensitive Depth | 0.09" (2.2 mm) | ||||
Operating Temperature | 10-50℃ | ||||
Storage Temperature | -20-70℃ | ||||
Detector Net Weight | 0.10kg | ||||
Undervoltage Indicator | Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω) | ||||
Dimensions | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm) | ||||
Power Supply Battery | Power Switch | Signal Interface | Battery Monitoring | Support Rod Interface | Optical Interface |
A23 ,12VDC,40mAh | Slide Switch | BNC Female Socket | Instantaneous Button | M4 X 2 | SM1 X 1 SM0.5 X 1 |
Response Curve:
Product Configurations:
Attachment 1: Optional Configuration Table
Silicon-based Biased Photodetector | Optional Configuration | ||||
Name | Material | Type | Features | Wavelength Range Light-Sensitive Size | Reserved Optional Configurations |
PD: "Photodetector" | J: InGaAs (Indium Gallium Arsenide) | B: Biased Type | C: Conventional Type | 5I10:500-1700nm ,Φ1.0mm | |
9N10:900-1700nm,Φ1.0mm | |||||
8J20:800-1700nm ,Φ2.0mm | |||||
9O5 :900-2600nm ,Φ0.5mm | |||||
9O10:900-2600nm,Φ1.0mm |
Attachment 2: Model and Product Number Correspondence Table
Model | Part Number | Specs |
PDJBC5I10 | A80153435 | 500-1700nm Indium Gallium Arsenide Biased Photodetector, Active area Φ1.0mm, Rise Time 5ns, Bandwidth 70MHz |
PDJBC9N10 | A80153436 | 900-1700nm Indium Gallium Arsenide Biased Photodetector, Active area Φ1.0mm, Rise Time 10ns, Bandwidth 35MHz |
PDJBC8J20 | A80153437 | 800-1700nm Indium Gallium Arsenide Biased Photodetector, Active area Φ2.0mm, Rise Time 30ns, Bandwidth 11.7MHz |
PDJBC9O5 | A80153438 | 900-2600nm Indium Gallium Arsenide Biased Photodetector, Active area Φ0.5mm, Rise Time 17ns, Bandwidth 20.6MHz |
PDJBC9O10 | A80153439 | 900-2600nm Indium Gallium Arsenide Biased Photodetector, Active area Φ1.0mm, Rise Time 25ns, Bandwidth 14MHz |
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