• 900-2600nm InGaAs Bias Photodetector, Active Area Size Φ0.5mm, Rise Time 17ns

    IdealPhotonics' InGaAs bias photodetector has a photosensitive range from 500nm to 2600nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for conventional photodetector applications, offering excellent performance and high cost-performance ratio. Technical support is available across various domains, commonly used in visible and infrared light measurements

    产品特点Photosensitive range covers 500nm to 2600nm, commonly used in visible and infrared light measurements、 Bias-type detector, extremely low noise, fast response, no gain、 Low cost, suitable for conventional photodetector applications、 Excellent performance, high cost-performance ratio, and technical support across various domains、 Custom services available for non-standard applications

    产品货号E80043169

    应用领域Visible and infrared light measurements

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    Sherry

    电话:16628709332

    邮箱:moli@microphotons.com

    主要参数
  • 核心参数
  • 尺寸图
  • Main Parameters

     

    Parameter

    Value

    Wavelength Range

    500-1700nm

    900-1700nm

    800-1700nm

    900-2600nm

    Active area

    Φ1.0mm

    Φ1.0mm

    Φ2.0mm

    Φ0.5mm

    Φ1.0mm

    Bandwidth Range

    70MHz

    35MHz

    11.7MHz

    20.6MHz

    14MHz

    Rise Time (@50Ω)

    5ns

    10ns

    30ns

    17ns

    25ns

    NEP

    2.0 × 10-14W/H z1/2

    2.5 × 10-14W/H z1/2

    1.3 × 10-13W/H z1/2

    1.0 × 10-12W/H z1/2

    1.5 × 10-12W/Hz1/2

    Dark Current

    1.5nA(Typ.)/10

    nA(Max)

    1.0nA(Typ.)/25

    nA(Max)

    55nA(Typ.)/20 0nA(Max)

    2uA(Typ.)/20u

    A(Max)

    5uA(Typ.)/40uA(Max)

    Junction Capacitance

    50pF(Typ.)

    80pF(Typ.)

    100pF(Typ.)

    140pF(Typ.)

    500pF(Typ.)

    Bias Voltage

    5V

    1.8V

    Output Current

    0~5mA

    Output Voltage

    ~9V(Hi-Z);

    ~170  mV(50Ω)

    Light-Sensitive Depth

    0.09"  (2.2  mm)

    Operating Temperature

    10-50℃

    Storage Temperature

    -20-70℃

    Detector Net Weight

    0.10kg

    Undervoltage Indicator

    Vout  ≤9V(Hi-Z) Vout  ≤170mV(50Ω)

    Dimensions

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.8     mm X  22.5  mm)

    Power Supply Battery

    Power Switch

    Signal Interface

    Battery Monitoring

    Support Rod Interface

    Optical Interface

    A23 ,12VDC,40mAh

    Slide Switch

    BNC Female Socket

    Instantaneous Button

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     


    Response Curve

    图片2.png


    Product Configurations

    图片1.png



    Attachment 1: Optional Configuration Table

    Silicon-based Biased Photodetector

    Optional Configuration

    Name

    Material

    Type

    Features

    Wavelength Range Light-Sensitive Size

    Reserved Optional Configurations

    PD: "Photodetector"

    J: InGaAs (Indium Gallium Arsenide)

    B: Biased Type

    C: Conventional Type

    5I10:500-1700nm ,Φ1.0mm






    9N10:900-1700nm,Φ1.0mm






    8J20:800-1700nm ,Φ2.0mm






    9O5 :900-2600nm ,Φ0.5mm






    9O10:900-2600nm,Φ1.0mm


     


    Attachment 2: Model and Product Number Correspondence Table

    Model

    Part Number

    Specs

    PDJBC5I10

    A80153435

    500-1700nm Indium Gallium Arsenide Biased Photodetector, Active area Φ1.0mm, Rise Time 5ns, Bandwidth 70MHz

    PDJBC9N10

    A80153436

    900-1700nm Indium Gallium Arsenide Biased Photodetector, Active area Φ1.0mm, Rise Time 10ns, Bandwidth 35MHz

    PDJBC8J20

    A80153437

    800-1700nm Indium Gallium Arsenide Biased Photodetector, Active area Φ2.0mm, Rise Time 30ns, Bandwidth 11.7MHz

    PDJBC9O5

    A80153438

    900-2600nm Indium Gallium Arsenide Biased Photodetector, Active area Φ0.5mm, Rise Time 17ns, Bandwidth 20.6MHz

    PDJBC9O10

    A80153439

    900-2600nm Indium Gallium Arsenide Biased Photodetector, Active area Φ1.0mm, Rise Time 25ns, Bandwidth 14MHz



    可选配置表
    产品资料

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