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首页 PhotoDetectors Biased detectors InGaAs Bias Photodetector 500-2600nm indium gallium arsenide biased photodetector - conventional type 800-1700nm Indium Gallium Arsenide Bias Photodetector, Sensitive Area Size Φ2.0mm, Rise Time 30ns

    • 800-1700nm Indium Gallium Arsenide Bias Photodetector, Sensitive Area Size Φ2.0mm, Rise Time 30ns

    IdealPhotonics' indium gallium arsenide (InGaAs) bias photodetector has a spectral sensitivity range from 500nm to 2600nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for general photodetection applications, offering excellent performance and high cost-effectiveness. The product provides comprehensive technical support and is commonly used in visible and infrared light measurements

    产品特点Sensitivity range covers 500nm to 2600nm, commonly used in visible and infrared light measurements、 Bias-type detector, with extremely low noise and fast response, no gain、 Low cost, suitable for general photodetection applications、 Excellent performance, high cost-effectiveness, and comprehensive technical support、 Customization services are available upon request

    产品货号E80043167

    应用领域Visible and infrared light measurements

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    主要参数
  • 核心参数

  • 尺寸图

    • Main Parameters

    Parameter

    Value

    Wavelength Range

    500-1700nm

    900-1700nm

    800-1700nm

    900-2600nm

    Active Area

    Φ1.0mm

    Φ1.0mm

    Φ2.0mm

    Φ0.5mm

    Φ1.0mm

    Bandwidth Range

    70MHz

    35MHz

    11.7MHz

    20.6MHz

    14MHz

    Rise Time (@50Ω)

    5ns

    10ns

    30ns

    17ns

    25ns

    NEP

    2.0 × 10-14W/H z1/2

    2.5 × 10-14W/H z1/2

    1.3 × 10-13W/H z1/2

    1.0 × 10-12W/H z1/2

    1.5 × 10-12W/Hz1/2

    Dark Current

    1.5nA(Typ.)/10

    nA(Max)

    1.0nA(Typ.)/25

    nA(Max)

    55nA(Typ.)/20 0nA(Max)

    2uA(Typ.)/20u

    A(Max)

    5uA(Typ.)/40uA(Max)

    Junction Capacitance

    50pF(Typ.)

    80pF(Typ.)

    100pF(Typ.)

    140pF(Typ.)

    500pF(Typ.)

    Bias Voltage

    5V

    1.8V

    Output Current

    0~5mA

    Output Voltage

    ~9V(Hi-Z)；

    ~170  mV(50Ω)

    Active Area Depth

    0.09"  (2.2  mm)

    Operating Temperature

    10-50℃

    Storage Temperature

    -20-70℃

    Detector Net Weight

    0.10kg

    Undervoltage Indicator

    Vout  ≤9V(Hi-Z) Vout  ≤170mV(50Ω)

    Dimensions

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.8     mm X  22.5  mm)

    Power Supply Battery

    Power Switch

    Signal Interface

    Battery Monitoring

    Support Rod Interface

    Optical Interface

    A23 ，12VDC，40mAh

    Slide Switch

    BNC Female Socket

    Instantaneous Button

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     

     


    Response Curve：

    图片2.png


    Product Configuration：

    图片1.png

    Attachment 1: Optional Configuration Table

    Silicon-based Bias Photodetector

    Optional

    Name

    Material

    Type

    Features

    Wavelength Range  Sensitive Area Size

    Reserved Optional Configuration

    PD: "Photodetector"

    J: InGaAs (Indium Gallium Arsenide)

    B: Bias Type

    C: Conventional Type

    5I10：500-1700nm ，Φ1.0mm






    9N10：900-1700nm，Φ1.0mm






    8J20：800-1700nm ，Φ2.0mm






    9O5 ：900-2600nm ，Φ0.5mm






    9O10：900-2600nm，Φ1.0mm


     


    Attachment 2: Model and Product Number Cross Reference Table

    Model

    Part Number

    Specs

    PDJBC5I10

    A80153435

    500-1700nm InGaAs Bias Photodetector, Active Area Φ1.0mm, Rise Time 5ns, Bandwidth 70MHz

    PDJBC9N10

    A80153436

    900-1700nm InGaAs Bias Photodetector, Active Area Φ1.0mm, Rise Time 10ns, Bandwidth 35MHz

    PDJBC8J20

    A80153437

    800-1700nm InGaAs Bias Photodetector, Active Area Φ2.0mm, Rise Time 30ns, Bandwidth 11.7MHz

    PDJBC9O5

    A80153438

    900-2600nm InGaAs Bias Photodetector, Active Area Φ0.5mm, Rise Time 17ns, Bandwidth 20.6MHz

    PDJBC9O10

    A80153439

    900-2600nm InGaAs Bias Photodetector, Active AreaΦ1.0mm, Rise Time 25ns, Bandwidth 14MHz

     

    可选配置表
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