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Si Amplified Photodetector
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Silicon amplification photodetector
Xiaoxiao Photon's silicon-based amplification photodetector covers a photosensitive range of 350-1100nm, with a programmable 8-speed adjustable gain that can achieve quantitative photoelectric conversion. It has a wide dynamic range and is suitable for various photoelectric development scenarios. The 100% device is produced nationwide, with excellent performance and high cost-effectiveness. It provides comprehensive technical support and is commonly used in visible light and near-infrared light measurements.
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200-1100nm silicon amplification photodetector with fixed gain
Xiaoxiao Photon's silicon amplification photodetector has a photosensitive range covering 200nm~1100nm, a fixed gain, and can achieve quantitative photoelectric conversion. It has sufficient gain while ensuring high bandwidth performance, and is suitable for the development of optoelectronic detection applications with strong or weak light and fast speed. It has excellent performance, high cost-effectiveness, and provides comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.
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Silicon Si Avalanche Unit Detector APD Series 400-1100nm
The Si avalanche unit detection module integrates low-noise APD detector, low-noise broadband transimpedance amplifier, ultra-low noise isolation power supply, high voltage power supply, and APD temperature compensation; Isolate the power supply to ensure that the output signal is not affected by external power supply; APD temperature compensation improves the stability of the detection module. Avalanche photodetectors have the characteristics of high gain, high sensitivity, high bandwidth, and low noise
Product InformationModel Wavelength Bandwidth Detector Responsiveness Operate
Si Avalanche Cell Detector 1GHz 400-1100nm FC/APC
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Si Avalanche Cell Detector 200MHz 400-1100nm FC/APC
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Si Avalanche Cell Detector 2GHz 400-1100nm FC/APC
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Si Avalanche Cell Detector 300MHz 400-1100nm FC/APC
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Silicon Si compatible 30mm cage system silicon photodiode detection module 320-1100nm LightCap C3A
The C3A series photoelectric detection module integrates photodiodes, amplification circuits, and power conditioning circuits into a miniaturized module. Not only suitable for the construction of various laboratory optical systems, but also for integration in user products. The module is easy to install and can achieve sealing of the optical path. The module can operate with a wide range of positive and negative power sources, and contains a linear rectification circuit inside to reduce input noise and improve signal-to-noise ratio. Different types, sizes, and speeds of photodiodes can be selected within the series, such as Si or InGaAs. The typical output characteristic of a module using a 1 mm2 silicon photodiode is ± 3V, 0-25MHz (with positive and negative 5V power supply)
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Silicon Si amplification photodetector 320-1100nm (DC-5MHz/200kHz)
A photodetector is a type of photodetector with a rated bandwidth and fixed gain, used for detecting optical signals. The optical signal is input from the sensing surface of the photoelectric sensor and output in the form of voltage through BNC. This product can measure optical signals in the wavelength range of 800nm to 1700nm. Please refer to the attached table for specific performance parameter data. The LD-PD photodetector housing comes with a 1/4 "-20 inch threaded mounting hole for easy installation and fixation. The housing also comes with two different sizes of threaded couplings, which are suitable for industrial and scientific applications, and can be easily adapted to external optical components such as filters, attenuators, lenses, FC fiber optic adapters, etc. This product includes a plastic dust cover. Please refer to Chapter 3 for specific installation instructions. Each photodetector is equipped with a DC linear power supply with an output of ± 9V, and the rated input voltage of this DC power supply is 220VAC/50Hz
Product InformationModel Operate
400-1100nm Silicon Amplified Photodetector (DC-5MHz)
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320-1100nm Silicon Amplified Photodetector (DC-200kHz)
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200-1100nm silicon-based amplification photodetector - fixed gain
Xiaoxiao Photon's silicon-based amplification photodetector has a photosensitive range covering 200nm~1100nm, a fixed gain, and can achieve quantitative photoelectric conversion. It has sufficient gain while ensuring high bandwidth performance, making it suitable for the development of optoelectronic detection applications with strong or weak light and fast speed. It has excellent performance, high cost-effectiveness, and provides Quan directional technical support. It is commonly used in ultraviolet and visible light measurements. Product features: The photosensitive range covers 200nm~1100nm and is commonly used in UV and visible light measurement amplification detectors. The fixed gain and quantitative photoelectric conversion have sufficient gain while ensuring high bandwidth performance. It is suitable for optoelectronic detection applications with strong or weak light and fast speed. The development performance is excellent, cost-effective, and the Quan directional technical support provides non-standard customized services. Application areas: UV and visible light measurement.
Product InformationModel Operate
320-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ0.8mm
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320-1100nm Silicon-based Amplifying Photodetector, Photodetector Size 1.1mm × 1.1m
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400-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ150μm
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200-1100nm Silicon-Based Amplified Photodetector, Photodetector Size Φ1.0mm
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筱晓光子的硅基放大光电探测器感光范围覆盖190nm~1100nm,有8档可调增益,可实现定量光电转换,动态范围宽,适用于各种光电开发场景,性能优秀,性价比高,提供quan方位技术支持,常应用于紫外与可见光测量。产品特点:感光范围覆盖190nm~1100nm,常应用于紫外与可见光测量放大型探测器,8档可调增益,定量光电转换动态范围宽,适用于各种光电开发场景性能优秀,性价比高,quan方位技术支持提供非标定制服务应用领域:紫外线与可见光测量主要参数: 参数值波长范围350-1100nm190-1100nm320-1100nm190-1100nm感光尺寸3.6mm×3.6mmΦ9.8mm响应时间常数10ns0.5us35ns3us带宽范围DC~12MHzDC~11MHz增益范围Hi-Z负载:0.51kV/A~4.75MV/A;50Ω负载:0.75kV/A~2.38MV/A信号幅值Hi-Z负载:0~10V;50Ω负载:0……
Product InformationModel Operate
320-1100nm Silicon-based Amplified Photodetector, Photodetector Size Φ9.8mm
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350-1100nm Silicon-based Amplified Photodetector Photodetector Size: 3.6mm × 3.6m
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190-1100nm Silicon-Based Amplified Photodetector, Photodetector Size Φ9.8mm
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190-1100nm Silicon-based Amplified Photodetector with 3.6×3.6mm Sensitive Are
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Xiaoxiao Photon's silicon-based amplification photodetector covers a photosensitive range of 350nm~1100nm, with a programmable 8-speed adjustable gain that can achieve quantitative photoelectric conversion and a wide dynamic range. It is suitable for various photoelectric development scenarios, with 100% devices produced nationwide, excellent performance, high cost-effectiveness, and provides Quan directional technical support. It is commonly used in visible light and near-infrared light measurements. Product features: The photosensitive range covers 350nm~1100nm and is commonly used as an amplifying detector for visible and near-infrared light measurement. It has a programmable 8-speed adjustable gain and a wide dynamic range for quantitative photoelectric conversion. It is suitable for various optoelectronic development scenarios. 100% of the devices are produced nationwide, with excellent performance and high cost-effectiveness. Quan directional technical support provides non-standard customization services. Application areas: Visible and near-infrared light measurement. Main parameters: parameter value wavelength range 350-1100nm photosensitive size 3.6mm × 3.6mm peak wavelength 970nm (Typ.) amplifier GBP230MHz bandwidth range DC~6.7MHz gain range Hi-Z load: 1.5kV/A~4.7MV/A; 50 Ω load: 0.75kV/A~2.35MV/A signal amplitude Hi-Z load: 0~
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350-1100nm Silicon-Based Photodetector with Amplification
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