• 200-1100nm Silicon-Based Amplified Photodetector, Photodetector Size Φ1.0mm

    IdealPhotonics’ silicon-based amplified photodetector covers a wavelength range from 200nm to 1100nm, offering fixed gain for quantitative photoconversion. It provides sufficient gain while ensuring high bandwidth performance, making it ideal for photodetection applications with weak light intensity and fast speeds. The device is known for its excellent performance, high cost-performance ratio, and comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.

    产品特点Wavelength range: 200nm–1100nm, commonly used for ultraviolet and visible light measurements、 Amplified detector with fixed gain for quantitative photoconversion、 Provides sufficient gain and high bandwidth, ideal for weak light and fast-speed applications、 Excellent performance and cost-effective, with full technical support、 Customization options available

    产品货号E80043150

    应用领域Ultraviolet and visible light measurements

    产品单价联系客服询价

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    Sherry

    电话:16628709332

    邮箱:moli@microphotons.com

    主要参数
  • 核心参数
  • 尺寸图
  • Main Parameters

     

    Parameter

    Value

    Wavelength Range

    200-1100nm

    400-1000nm

    320-1100nm

    320-1000nm

    Photodetector Size

    Φ1.0mm

    Φ150um

    1.1mm×1.1mm

    Φ0.8mm

    Bandwidth Range

    DC 150MHz

    DC~380MHz

    DC~20MHz

    DC~50MHz

     

    Gain Range

    Hi-Z Load: 1 × 10⁴V/A; 50Ω Load: 5 × 10³V/A

    Hi-Z Load: 5 × 10⁴V/A; 50Ω Load: 2.5 × 10⁴V/A

    1 × 1012V/A±1 0%

    Hi-Z Load: 100kV/A; 50Ω Load: 50kV/A

    Signal Amplitude

    Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V

    Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V

    0 10V

    Hi-Z Load: 0~3.6V; 50Ω Load: 0~1.8V

    NEP

    2.92× 10-11W/Hz1/2

    3.6 × 10-11W/Hz1/2

    3.0 × 10-15W/H z1/2

    7.8 × 10-12W/Hz1/2

    Photodetector Depth

    0.09"  (2.2  mm)

    0.20"  (5.0  mm)

    0.10"  (2.4  mm)

    0.07"  (1.8  mm)

    Operating Temperature

    10-50℃

    10-40℃

    10-50℃

    Storage Temperature

    -25-70℃

    Detector Net Weight

    0.10kg

    0.06kg

    Dimensions

    2.79" X  1.96" X 0.89"  (70.9  mm X 49.8     m

    m X 22.5  mm)

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.9     mm

    X 22.5  mm)

    Power Supply Interface

    Power Source

    Power Switch

    Signal Interface

    Mounting Interface

    Optical Interface

    LUMBERG  R SMV3  FEMA LE

    LDS12B(DP), ±12VDC
    Regulated Linear Power Supply, 6W, 220VAC

    Sliding Switch with LED indicator

    BNC Female Socket

    M4 X 2

    SM1 X  1

    SM0.5 X  1


    SI Response Curve:

    66c5442b670b2.jpg 


    Attachment 1: Optional Configuration Table

    Silicon-Based Amplified Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range Photodetector Size

    Reserved Optional Configuration

    PD: "Photodetector"

    S: Si (Silicon-based)

    A: Amplified

    F: Fixed Gain

    2B10:200-1100nm Φ1.0mm






    4F015:400-1000nm Φ150u

    m






    3D11:

    320-1100nm 1.1mmX1.1

    mm






    3C8:320-1000nm Φ0.8mm


     


    Attachment 2: Model and Item Number Comparison Table

    Model

    Part Number

    Specs

    PDSAF2B10

    A80153417

    200-1100nm Silicon-based Amplified Photodetector, Photodetector Size Φ 1.0mm, Fixed Gain 1 × 10⁴ V/A, Bandwidth Range DC ~ 150MHz

    PDSAF4F015

    A80153418

    400-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ 150µm, Fixed Gain 5 × 10⁴ V/A, Bandwidth Range DC ~ 380MHz

    PDSAF3D11

    A80153419

    320-1100nm Silicon-based Amplified Photodetector, Photodetector Size 1.1mm × 1.1mm, Fixed Gain 1 × 10¹² V/A ± 10%, Bandwidth Range DC ~ 20MHz

    PDSAF3C8

    A80153420

    320-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ 0.8mm, Fixed Gain 100kV/A, Bandwidth Range DC ~ 50MHz

     

    可选配置表
    产品资料

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