IdealPhotonics’ silicon-based amplified photodetector covers a wavelength range from 200nm to 1100nm, offering fixed gain for quantitative photoconversion. It provides sufficient gain while ensuring high bandwidth performance, making it ideal for photodetection applications with weak light intensity and fast speeds. The device is known for its excellent performance, high cost-performance ratio, and comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.
产品特点Wavelength range: 200nm–1100nm, commonly used for ultraviolet and visible light measurements、 Amplified detector with fixed gain for quantitative photoconversion、 Provides sufficient gain and high bandwidth, ideal for weak light and fast-speed applications、 Excellent performance and cost-effective, with full technical support、 Customization options available
产品货号E80043150
应用领域Ultraviolet and visible light measurements
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Sherry
电话:16628709332
邮箱:moli@microphotons.com
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Main Parameters
Parameter | Value | ||||
Wavelength Range | 200-1100nm | 400-1000nm | 320-1100nm | 320-1000nm | |
Photodetector Size | Φ1.0mm | Φ150um | 1.1mm×1.1mm | Φ0.8mm | |
Bandwidth Range | DC ~150MHz | DC~380MHz | DC~20MHz | DC~50MHz | |
Gain Range | Hi-Z Load: 1 × 10⁴V/A; 50Ω Load: 5 × 10³V/A | Hi-Z Load: 5 × 10⁴V/A; 50Ω Load: 2.5 × 10⁴V/A | 1 × 1012V/A±1 0% | Hi-Z Load: 100kV/A; 50Ω Load: 50kV/A | |
Signal Amplitude | Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V | Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V | 0 ~10V | Hi-Z Load: 0~3.6V; 50Ω Load: 0~1.8V | |
NEP | 2.92× 10-11W/Hz1/2 | 3.6 × 10-11W/Hz1/2 | 3.0 × 10-15W/H z1/2 | 7.8 × 10-12W/Hz1/2 | |
Photodetector Depth | 0.09" (2.2 mm) | 0.20" (5.0 mm) | 0.10" (2.4 mm) | 0.07" (1.8 mm) | |
Operating Temperature | 10-50℃ | 10-40℃ | 10-50℃ | ||
Storage Temperature | -25-70℃ | ||||
Detector Net Weight | 0.10kg | 0.06kg | |||
Dimensions | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 m m X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm) | |||
Power Supply Interface | Power Source | Power Switch | Signal Interface | Mounting Interface | Optical Interface |
LUMBERG R SMV3 FEMA LE | LDS12B(DP), ±12VDC | Sliding Switch with LED indicator | BNC Female Socket | M4 X 2 | SM1 X 1 SM0.5 X 1 |
SI Response Curve:
Attachment 1: Optional Configuration Table
Silicon-Based Amplified Photodetector | Optional Configuration | ||||
Product Name | Material | Type | Features | Wavelength Range Photodetector Size | Reserved Optional Configuration |
PD: "Photodetector" | S: Si (Silicon-based) | A: Amplified | F: Fixed Gain | 2B10:200-1100nm ,Φ1.0mm | |
4F015:400-1000nm ,Φ150u m | |||||
3D11: 320-1100nm ,1.1mmX1.1 mm | |||||
3C8:320-1000nm ,Φ0.8mm |
Attachment 2: Model and Item Number Comparison Table
Model | Part Number | Specs |
PDSAF2B10 | A80153417 | 200-1100nm Silicon-based Amplified Photodetector, Photodetector Size Φ 1.0mm, Fixed Gain 1 × 10⁴ V/A, Bandwidth Range DC ~ 150MHz |
PDSAF4F015 | A80153418 | 400-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ 150µm, Fixed Gain 5 × 10⁴ V/A, Bandwidth Range DC ~ 380MHz |
PDSAF3D11 | A80153419 | 320-1100nm Silicon-based Amplified Photodetector, Photodetector Size 1.1mm × 1.1mm, Fixed Gain 1 × 10¹² V/A ± 10%, Bandwidth Range DC ~ 20MHz |
PDSAF3C8 | A80153420 | 320-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ 0.8mm, Fixed Gain 100kV/A, Bandwidth Range DC ~ 50MHz |
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