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InGaAs photodiode

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P97MXXT2 series unit InGaAs detector 1.7um SWIR two-stage TEC TO package

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950-1650nm InGaAs Detector with Dual TEC, Photodiode Φ1000µm Add to Cart

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Indium gallium arsenide InGaAs unit detector SWIR-II type 0.9-1.7um

Indium Gallium Arsenide InGaAs Unit Detector SWIR-II Type 0.9-1.7um Application Fields: Spectral Detection and Analysis, Gas Analysis, Water Content Analysis, etc. Product Features: Positive Illumination Structure, High Sensitivity, Fast Response Time, Internally Integrated Secondary Thermoelectric Refrigerator

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900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength

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900-1800nm InGaAs Large Active Area PIN Photodiode Add to Cart

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900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package

The GESTIN-2TE-TO8 series unit InGaAs detector is mainly composed of P-I-N structure InGaAs photosensitive chip, transition electrode plate, temperature sensor, and two-stage thermoelectric cooler (2TE), and adopts TO packaging form. This user manual only introduces the product series.

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900-2700nm InGaAs photodiode Two-stage TEC cooling Φ0.3mm Add to Cart

900-2700nm InGaAs photodiode Two-stage TEC cooling Φ0.5mm Add to Cart

900-2700nm InGaAs photodiode Two-stage TEC cooling Φ2mm Add to Cart

900-2700nm InGaAs photodiode Two-stage TEC cooling Φ3mm Add to Cart

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800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm

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800-2600nm High-Speed InGaAs PIN Photodiode with 1.5mm TO39 Sealed Dome Lens Add to Cart

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Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

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600-1750nm InGaAs quadrant photodiode Add to Cart

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High speed InGaAs PIN photodiode 600-1750nm TO-39 photosensitive surface 3mm

Marktech's 1346 series is a product line with high sensitivity and reliability, which is very suitable for optical communication equipment. Customers can customize other packaging forms, wavelength sensitivity range: 600nm ~ 1750nm

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1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm

Application areas: Spectral detection and analysis, gas analysis, water content analysis, etc. Product features: positive irradiation structure, high sensitivity, fast response time, TO46 packaging

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1.0~2.6 um extended InGaAs photodiode Add to Cart

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Indium gallium arsenide InGaAs long wavelength photodiode 2.6 μ m

InGaAs photodiodes are mainly used for near-infrared detection, with characteristics such as high speed, high sensitivity, low noise, and a wide response range (0.5 μ m to 2.6 μ m).

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900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type

InGaAs avalanche photodiode (APD) is a specialized device for short wave near-infrared single photon detection, which can meet the technical requirements of high-efficiency and low-noise single photon detection in fields such as quantum communication and weak light detection, achieving single photon detection at wavelengths of 0.9~1.7 μ m.

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Indium Gallium Arsenide InGaAs Extended Photodiode 2.2um

The 2.2um extended InGaAs photodiode has a response cutoff wavelength of 2.2um, providing excellent shunt resistance and excellent responsiveness within the bandwidth range.

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Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)

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900-2700nm Large photosensitive surface InGaAs Indium Gallium Arsenide Photodiode φ2mm Add to Cart

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900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type

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900-1700nm InGaAs Geiger Mode Avalanche Photodiode Uncooled Add to Cart

900-1700nm InGaAs Geiger-mode avalanche photodiode with built-in TEC cooling Add to Cart

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  • 10+ 10 Years of Experience
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  • 10000 10k + Diodes sold worldwide
  • 30 30+ Invention patent
  • 10 10+ Advanced Optical Solutions

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