首页 PhotoDetectors Photodiode InGaAs photodiode 900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type 900-1700nm InGaAs Geiger-mode avalanche photodiode with built-in TEC cooling
  • 900-1700nm InGaAs Geiger-mode avalanche photodiode with built-in TEC cooling

    InGaAs avalanche photodiode (APD) is a dedicated device for short-wave near-infrared single photon detection. It can meet the technical requirements of quantum communication, weak light detection and other fields for high-efficiency and low-noise single photon detection, and realize single photon detection of 0.9 ~ 1.7μm wavelength.

    产品特点Spectral response range 0.9~1.7μm、 High detection efficiency, low dark count rate、 6 pin TO8

    产品货号E80042039

    应用领域Weak light detection、 Quantum secure communication、 Biomedical

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    Sherry

    电话:16628709332

    邮箱:moli@microphotons.com

    主要参数
  • 核心参数
  • 尺寸图
  • Linear mode parameters

    PN#

    IGA-APD-GM104-TEC

    Parameter

    Symbol

    Unit

    Test conditions

    Min.

    Typical

    Max.

    Reverse breakdown voltage

    VBR

    V

    22℃±3℃ , ID =10μA

    60

    80

    90

    Responsivity

    Re

    A/W

    22℃±3℃, λ =1550nm ,M =1

    0.8

    0.85


    Dark current

    ID

    nA

    22℃±3℃, M =10


    0.1

    0.3

    Capacitance

    C

    pF

    22℃±3℃ , M =10,f=1MHz



    0.25

    Breakdown voltage temperature coefficient

    η

    V/K

    -40℃ ~80℃, ID =10μA



    0.15

     


    Geiger mode parameters

    Parameter

    Unit

    Test conditions

    Min.

    Typical

    Max.

    Single photon detection efficiency PDE

    %

    -45℃, λ =1550nm, 0.1ph/pulse, Poisson distribution single photon source

    20

    -


    Dark count rate DCR

    kHz

    -45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20%

    -

    -

    20*

    After pulse probability APP


    -45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20%

    -

    -

    1× 10-3

    Time jitter Tj

    ps

    -45℃, 1ns gate width, 2MHz gated repetition rate, PDE=20%

    -

    -

    100

    * Different grades and specifications are available

     


    Room temperature IV curve

     3.1.png


    DCR-PDE(-45℃, fg=2MHz)

    3.2.png

     

    Temperature coefficien

    3.3.png

     

    Capacitor voltage

    3.4.png

     


    可选配置表
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