InGaAs avalanche photodiode (APD) is a dedicated device for short-wave near-infrared single photon detection. It can meet the technical requirements of quantum communication, weak light detection and other fields for high-efficiency and low-noise single photon detection, and realize single photon detection of 0.9 ~ 1.7μm wavelength.
产品特点Spectral response range 0.9~1.7μm、 High detection efficiency, low dark count rate、 6 pin TO8
产品货号E80042039
应用领域Weak light detection、 Quantum secure communication、 Biomedical
产品单价联系客服询价
到货日期请咨询客服获得货期
产品库存请咨询客服
Sherry
电话:16628709332
邮箱:moli@microphotons.com
相关产品
Linear mode parameters
PN# | IGA-APD-GM104-TEC | |||||
Parameter | Symbol | Unit | Test conditions | Min. | Typical | Max. |
Reverse breakdown voltage | VBR | V | 22℃±3℃ , ID =10μA | 60 | 80 | 90 |
Responsivity | Re | A/W | 22℃±3℃, λ =1550nm ,M =1 | 0.8 | 0.85 | |
Dark current | ID | nA | 22℃±3℃, M =10 | 0.1 | 0.3 | |
Capacitance | C | pF | 22℃±3℃ , M =10,f=1MHz | 0.25 | ||
Breakdown voltage temperature coefficient | η | V/K | -40℃ ~80℃, ID =10μA | 0.15 |
Geiger mode parameters
Parameter | Unit | Test conditions | Min. | Typical | Max. |
Single photon detection efficiency PDE | % | -45℃, λ =1550nm, 0.1ph/pulse, Poisson distribution single photon source | 20 | - | |
Dark count rate DCR | kHz | -45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20% | - | - | 20* |
After pulse probability APP | -45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20% | - | - | 1× 10-3 | |
Time jitter Tj | ps | -45℃, 1ns gate width, 2MHz gated repetition rate, PDE=20% | - | - | 100 |
* Different grades and specifications are available
Room temperature IV curve
DCR-PDE(-45℃, fg=2MHz)
Temperature coefficien
Capacitor voltage
新品推荐