900-1800nm InGaAs Large Active Area PIN Photodiode

Idealphotonics’ stocks a variety of PIN junction photodiodes (PD) with different active areas and packages, including Indium Gallium Arsenide (InGaAs), Gallium Phosphide (GaP), Silicon (Si), and Germanium (Ge) photodiodes. We offer high-speed silicon photodiodes, as well as photodetectors with high responsivity in the 900–2600 nm range, extending beyond the typical 1800 nm detection limit of standard InGaAs photodiodes. Additionally, we provide dual-band photodiodes that integrate two closely stacked photodetectors (silicon on top, InGaAs on the bottom), covering a combined wavelength range from 400 to 1700 nm. To enhance our photodiode product line, we offer pre-mounted photodiodes for convenient plug-and-play use. The non-uniformity at the edges of the detector's active area may cause unwanted capacitance and resistance effects, distorting the photodiode’s time-domain response. Therefore, we recommend directing the incident light to the center of the active area. This can be achieved by placing a focusing lens or a pinhole in front of the detector.