Si Bias Detector

概述
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200-1100nm conventional silicon bias photodetector

Xiaoxiao Photon's conventional silicon bias photodetector covers a photosensitive range of 200nm~1100nm, with extremely low noise, fast response, no gain, low cost, suitable for conventional photodetector applications, excellent performance, high cost-effectiveness, providing comprehensive technical support, and commonly used in ultraviolet and visible light measurements.

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400-1100nm high-speed silicon bias photodetector

Xiaoxiao Photon's high-speed silicon bias photodetector covers a photosensitive range of 400nm~1100nm, with extremely low noise, fast response, no gain, low cost, suitable for conventional optoelectronic detection applications, excellent performance, high cost-effectiveness, and provides comprehensive technical support. It is commonly used for visible light and infrared light measurement.

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High speed photodetector

Monitor the pulse energy and/or pulse shape of the laser at GHz level speed, across visible and near-infrared wavelengths, and with extremely low noise equivalent power (NEP). BNC output connector.

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American EOT high-speed photodetector (InGaAs/Si/GaAs) 830/1300/2000nm

Xiaoxiao Photon Company acts as an agent for EOT (Electro Optics Technology) in the United States. The entire product line of EOT's amplified photodetectors includes PIN photodiodes that convert optical power into current using the photovoltaic effect, and fixed gain transimpedance amplifiers that allow measurement of input power

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400-1100nm silicon-based bias photodetector - high-speed type

Xiaoxiao Photon's high-speed silicon-based biased photodetector covers a photosensitive range of 400nm~1100nm, with extremely low noise, fast response, no gain, low cost, suitable for conventional optoelectronic detection applications, excellent performance, high cost-effectiveness, and provides Quan directional technical support. It is commonly used for visible and infrared light measurement. Product features: The photosensitive range covers 400nm~1100nm and is commonly used as a bias type detector for visible and near-infrared light measurement. It has extremely low noise, fast response, no gain and low cost, and is suitable for measuring the intensity time waveform of high-speed laser pulses or emission events. It has excellent performance and high cost-effectiveness, and can provide non-standard customized services. Application areas: Visible light and infrared light measurement. Main parameters: parameter value input coupling method, window plate ball lens FC/PC fiber holder wavelength range of 400-1100nm, peak wavelength 730nm, peak response 0.46A/W3dB bandwidth (@ 50 Ω) 2Ghz1GHz rise/fall time (@ 50 Ω) 150ps/150ps1ns/1ns NEP9.29 × 10-15W/Hz 1/29.5 × 10-15dB 5W/Hz 1/2 dark current 35pA126pA output voltage 2V (Max...)

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200-1100nm silicon-based bias photodetector - conventional type

Xiaoxiao Photon's silicon-based biased photodetector covers a photosensitive range of 200nm~1100nm, with extremely low noise, fast response, no gain, low cost, suitable for conventional optoelectronic detection applications, excellent performance, high cost-effectiveness, and provides Quan directional technical support. It is commonly used in ultraviolet and visible light measurements. Product features: The photosensitive range covers 200nm~1100nm and is commonly used as a bias type detector for UV and visible light measurement. It has extremely low noise, fast response, no gain and low cost, and is suitable for conventional optoelectronic detection applications. It has excellent performance and high cost-effectiveness. Quan directional technical support provides non-standard customization services. Application areas: UV and visible light measurement. Main parameters: Parameter values, wavelength range: 200-1100nm, 350-1100nm, 320-1100nm, photosensitive size: Φ 1.0mm, Φ 3.6mm, Φ 10.0mm, bandwidth range: 350MHz, 25MHz, 10MHz rise time (@ 50 Ω), 1ns14ns35nsNEP5.0 × 10-14W/Hz1/21.6 × 10-14W/Hz1/22.4 × 10-14W/Hz1/2. Dark current: 0.3nA (Typ.) 10 nA (Max) 0.35 nA (Typ.)/6.0 nA (Max) 0.9 nA (Typ.)/10 nA (Max) junction

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