350-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ3.6mm

350-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ3.6mm

IdealPhotonics’ silicon-based bias photodetector has a light-sensitive range of 200nm to 1100nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for general photodetector applications, offering excellent performance and high cost-effectiveness, along with comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.

Product features：Light-sensitive range 200nm-1100nm, commonly used in ultraviolet and visible light measurements、 Bias-type detector, with extremely low noise, fast response, and no gain、 Low cost, suitable for general photodetector applications、 Excellent performance, high cost-effectiveness, and comprehensive technical support、 Offer customization services.

Part Number：--

Application area：Ultraviolet and visible light measurements.

Add to Cart Consult Favorite

Related Products

Main parameters
General Parameters
Optional Configurations
Downloads

Main parameters

Core parameters

Dimension Drawing

General Parameters

Main Parameters

Parameter	Value
Wavelength Range	200-1100nm	350-1100nm		320-1100nm
Active area	Φ1.0mm	Φ3.6mm		Φ10.0mm
Bandwidth	350MHz	25MHz		10MHz
Rise Time (@50Ω)	1ns	14ns		35ns
NEP	5.0 × 10^-14W/H z^1/2	1.6 × 10^-14W/Hz^1/2		2.4 × 10^-14W/Hz^1/2
Dark Current	0.3nA(Typ.)/10 nA(Max)	0.35nA(Typ.)/6.0nA(Max)		0.9nA(Typ.)/10nA(Max)
Junction Capacitance	6pF(Typ.)	40pF(Typ.)		150pF(Typ.)
Bias Voltage	10V
Output Current	0~10mA
Output Voltage	~9V(Hi-Z)； ~170 mV(50Ω)
Light-sensitive Depth	0.09" (2.2 m m)	0.09" (2.2 mm)		0.13" (3.3mm)
Operating Temperature	10-40℃
Storage Temperature	-20-70℃
Detector Weight	0.10kg
Undervoltage Indicator	Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω)
Dimensions	2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)
Power Supply	Power Switch	Signal Interface	Battery Monitoring	Support Rod Interface	Optical Interface
A23 ，12VDC ，40mAh	Sliding Switch	BNC Female Socket	Instantaneous Button	M4 X 2	SM1 X 1 SM0.5 X 1

SI Response Curve:

Attachment 1: Optional Configuration Table

Silicon-based Bias Photodetector	Optional Configurations
Product Name	Material	Type	Features	Wavelength Range Photodetector Size	Optional Configurations
PD:"Photodetector"	S: Si Silicon	A: Amplified	A: Adjustable Gain	2B10 ：200-1100nm ，Φ1.0mm
				3E36 ：350-1100nm ，Φ3.6mm
				3D100 ：320-1100nm ，Φ10.0m m

Attachment 2: Model and Part Number Cross-reference Table

Model	Part Number	Specs
PDSBC2B10	A80153421	200-1100nm Silicon-based Bias Photodetector, Active area Φ1.0mm, Rise Time 1ns, Bandwidth 350 MHz
PDSBC3E36	A80153422	350-1100nm Silicon-based Bias Photodetector, Active area Φ3.6mm, Rise Time 14ns, Bandwidth 25 MHz
PDSBC3D100	A80153423	320-1100nm Silicon-based Bias Photodetector, Active area Φ10.0mm, Rise Time 35ns, Bandwidth 10 MHz

Optional Configurations

Downloads

350-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ3.6mm.pdf