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首页 PhotoDetectors Biased detectors Si Bias Detector 200-1100nm silicon-based bias photodetector - conventional type 350-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ3.6mm

    • 350-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ3.6mm

    IdealPhotonics’ silicon-based bias photodetector has a light-sensitive range of 200nm to 1100nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for general photodetector applications, offering excellent performance and high cost-effectiveness, along with comprehensive technical support. It is commonly used in ultraviolet and visible light measurements.

    产品特点Light-sensitive range 200nm-1100nm, commonly used in ultraviolet and visible light measurements、 Bias-type detector, with extremely low noise, fast response, and no gain、 Low cost, suitable for general photodetector applications、 Excellent performance, high cost-effectiveness, and comprehensive technical support、 Offer customization services.

    产品货号E80043165

    应用领域Ultraviolet and visible light measurements.

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    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Main Parameters

    Parameter

    Value

    Wavelength Range

    200-1100nm

    350-1100nm

    320-1100nm

    Active area

    Φ1.0mm

    Φ3.6mm

    Φ10.0mm

    Bandwidth

    350MHz

    25MHz

    10MHz

    Rise Time (@50Ω)

    1ns

    14ns

    35ns

    NEP

    5.0 × 10-14W/H z1/2

    1.6 × 10-14W/Hz1/2

    2.4 × 10-14W/Hz1/2

    Dark Current

    0.3nA(Typ.)/10 nA(Max)

    0.35nA(Typ.)/6.0nA(Max)

    0.9nA(Typ.)/10nA(Max)

    Junction Capacitance

    6pF(Typ.)

    40pF(Typ.)

    150pF(Typ.)

    Bias Voltage

    10V

    Output Current

    0~10mA

    Output Voltage

    ~9V(Hi-Z)；

    ~170  mV(50Ω)

    Light-sensitive Depth

    0.09"  (2.2  m m)

    0.09"  (2.2  mm)

    0.13" (3.3mm)

    Operating Temperature

    10-40℃

    Storage Temperature

    -20-70℃

    Detector Weight

    0.10kg

    Undervoltage Indicator

    Vout  ≤9V(Hi-Z) Vout  ≤170mV(50Ω)

    Dimensions

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.8     mm X  22.5  mm)

    Power Supply

    Power Switch

    Signal Interface

    Battery Monitoring

    Support Rod Interface

    Optical Interface

    A23 ，12VDC ，40mAh

    Sliding Switch

    BNC Female Socket

    Instantaneous Button

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     

     

    SI Response Curve:

    66c5442b670b2.jpg


     

    Attachment 1: Optional Configuration Table

    Silicon-based Bias Photodetector

    Optional Configurations

    Product Name

    Material

    Type

    Features

    Wavelength Range Photodetector Size

    Optional Configurations

    PD:"Photodetector"

    S: Si Silicon

    A: Amplified

    A: Adjustable Gain

    2B10 ：200-1100nm ，Φ1.0mm






    3E36 ：350-1100nm ，Φ3.6mm






    3D100 ：320-1100nm ，Φ10.0m

    m


     

     

    Attachment 2: Model and Part Number Cross-reference Table

    Model

    Part Number

    Specs

    PDSBC2B10

    A80153421

    200-1100nm Silicon-based Bias Photodetector, Active area Φ1.0mm, Rise Time 1ns, Bandwidth 350 MHz

    PDSBC3E36

    A80153422

    350-1100nm Silicon-based Bias Photodetector, Active area Φ3.6mm, Rise Time 14ns, Bandwidth 25 MHz

    PDSBC3D100

    A80153423

    320-1100nm Silicon-based Bias Photodetector, Active area Φ10.0mm, Rise Time 35ns, Bandwidth 10 MHz

     

    可选配置表
    产品资料

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