首页 PhotoDetectors Biased detectors Si Bias Detector 400-1100nm silicon-based bias photodetector - high-speed type 400-1100nm High-speed Silicon-based Bias Photodetector Sensitive Area Φ250um, Rise Time 150ps, Bandwidth 2GHz Input Coupling Method: Window piece
  • 400-1100nm High-speed Silicon-based Bias Photodetector Sensitive Area Φ250um, Rise Time 150ps, Bandwidth 2GHz Input Coupling Method: Window piece

    IdealPhotonics' high-speed silicon-based bias photodetector has a light sensitivity range covering 400nm to 1100nm. It features extremely low noise, fast response, no gain, and low cost. It is suitable for conventional optoelectronic detection applications, offering excellent performance and high cost-effectiveness. Comprehensive orientation technical support is provided, and it is commonly used for visible and infrared light measurement.

    产品特点Sensitivity range covers 400nm to 1100nm, commonly used for visible and near-infrared light measurement、 Bias-type detector with extremely low noise, fast response, and no gain、 Low cost, suitable for intensity-time waveform measurements of high-speed laser pulses or light-emitting、 Excellent performance, high cost-effectiveness, and Comprehensive orientation technical support、 Provides non-standard customization services

    产品货号E80043175

    应用领域Visible and near-infrared light measurement.

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    Sherry

    电话:16628709332

    邮箱:moli@microphotons.com

    主要参数
  • 核心参数
  • 尺寸图
  • Main Parameters

     

    Parameter

    Value

    Input Coupling Method

    Window piece

    Ball lens

    FC/PC Optical Fiber Mount

    Wavelength Range

    400-1100nm, Peak Wavelength 730nm

    Peak Responsivity

    0.46A/W

    3dB Bandwidth (@50Ω)

    2Ghz

    1GHz

    Rise/Fall Time (@50Ω)

    150ps/150ps

    1ns/1ns

    NEP

    9.29× 10-15W/Hz1/2

    9.5 × 10-15W/Hz1/2

    Dark Current

    35pA

    126pA

    Output Voltage

    2V(Max)

    3.3V(Max)

    Junction Capacitance

    1.73pF

    Bias Voltage

    12V

    Output Current

    0~10mA

    Operating Impedance

    50Ω

    Active Area

    Φ250um

    Photosensitive Surface

    Plane Anti-Reflection Coating

    Lens Size 0.059" (1.50mm)

    Embedded Coupling Lens 0.059" (1.50mm)

    Detector Net Weight

    0.18kg

    Operating/Storage Temperature

    0-40℃

    Appearance Dimensions

    2.21" X  1.4" X 0.80"  (56.1  mm X  35.6  mm X  20.3mm)

    Power Supply Battery

    Signal Interface

    SMA (DC Coupled)

    A23 12VDC 40mAh

    Mounting Interface

    M4× 1

     

     



    SI Response Curve:

    66c5442b670b2.jpg

     


    Attachment 1: Optional Configuration Table

     

    Silicon-based Bias Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range Sensitive Area

    Bandwidth

    Input Coupling Method

    Optional Configuration

    PD: "Photodetector"

    S: Si Silicon-based

    B: Bias type

    H: High-speed type

    4G025:400-1100nm Φ250um

    2 2G Hz

    W: Window piece







    1 1G Hz

    L: Ball lens








    P: FC/PC Optical Fiber Mount


     


    Attachment 2: Model Number and Product Code Comparison Table

     

    Model

    Part Number

    Specs

    PDSBH2W

    A80153424

    400-1100nm High-speed Silicon-based Bias Photodetector, Active Area Φ250um, Rise Time 150ps, Bandwidth 2GHz, Input Coupling: Window piece

    PDSBH2L

    A80153425

    400-1100nm High-speed Silicon-based Bias Photodetector, Active Area  Φ250um, Rise Time 150ps, Bandwidth 2GHz, Input Coupling: Ball lens

    PDSBH2P

    A80153426

    400-1100nm High-speed Silicon-based Bias Photodetector, Active Area Φ250um, Rise Time 150ps, Bandwidth 2GHz, Input Coupling: FC/PC Optical Fiber Mount

    PDSBH1P

    A80153427

    400-1100nm High-speed Silicon-based Bias Photodetector, Active Area Φ250um, Rise Time 1ns, Bandwidth 1GHz, Input Coupling: FC/PC Optical Fiber Mount

     


    可选配置表
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