320-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ10.0mm

320-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ10.0mm

IdealPhotonics' silicon-based bias photodetector has a light sensitivity range covering 200nm to 1100nm. It features extremely low noise, fast response, no gain, and low cost. It is suitable for conventional optoelectronic detection applications, offering excellent performance and high cost-effectiveness. Comprehensive orientation technical support is provided, and it is commonly used for ultraviolet and visible light measurement.

Product features：Sensitivity range 200nm-1100nm, commonly used for ultraviolet and visible light measurement、 Bias-type detector with extremely low noise, fast response, and no gain、 Low cost, suitable for conventional optoelectronic detection applications、 Excellent performance, high cost-effectiveness, and full technical support、 Provide customization services

Part Number：--

Application area：Ultraviolet and visible light measurement

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Main parameters
General Parameters
Optional Configurations
Downloads

Main parameters

Core parameters

Dimension Drawing

General Parameters

Main Parameters

Parameter	Value
Wavelength Range	200-1100nm	350-1100nm		320-1100nm
Active area	Φ1.0mm	Φ3.6mm		Φ10.0mm
Bandwidth Range	350MHz	25MHz		10MHz
Rise Time (@50Ω)	1ns	14ns		35ns
NEP	5.0 × 10-14W/H z1/2	1.6 × 10^-14W/Hz^1/2		2.4 × 10^-14W/Hz^1/2
Dark Current	0.3nA(Typ.)/10 nA(Max)	0.35nA(Typ.)/6.0nA(Max)		0.9nA(Typ.)/10nA(Max)
Junction Capacitance	6pF(Typ.)	40pF(Typ.)		150pF(Typ.)
Bias Voltage	10V
Output Current	0~10mA
Output Voltage	~9V(Hi-Z)； ~170 mV(50Ω)
Photosensitive Surface Depth	0.09" (2.2 m m)	0.09" (2.2 mm)		0.13" (3.3mm)
Operating Temperature	10-40℃
Storage Temperature	-20-70℃
Detector Net Weight	0.10kg
Undervoltage Indicator	Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω)
Dimensions	2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm)
Power Supply Battery	Power Switch	Signal Interface	Battery Monitoring	Mounting Interface	Optical Interface
A23 ，12VDC ，40mAh	Slide switch	BNC Female	Instant button	M4 X 2	SM1 X 1 SM0.5 X 1

SI Response Curve:

Attachment 1: Optional Configuration Table

Silicon-based Bias Photodetector	Optional Configuration
Product Name	Material	Type	Features	Wavelength Range Sensitive Area	Optional Configurations
PD: "Photodetector"	S: Si Silicon-based	B: Bias type	C: Conventional type	2B10 ：200-1100nm ，Φ1.0mm
				3E36 ：350-1100nm ，Φ3.6mm
				3D100 ：320-1100nm ，Φ10.0m m

Attachment 2: Model Number and Part Number Cross-Reference Table

Model	Part Number	Specs
PDSBC2B10	A80153421	200-1100nm Silicon-based Bias Photodetector, Active area Φ1.0mm, Rise Time 1ns, Bandwidth 350 MHz
PDSBC3E36	A80153422	350-1100nm Silicon-based Bias Photodetector, Active area Φ3.6mm, Rise Time 14ns, Bandwidth 25 MHz
PDSBC3D100	A80153423	320-1100nm Silicon-based Bias Photodetector, Active area Φ10.0mm, Rise Time 35ns, Bandwidth 10 MHz

Optional Configurations

Downloads

320-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ10.0mm.pdf