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首页 PhotoDetectors Biased detectors Si Bias Detector 200-1100nm silicon-based bias photodetector - conventional type 320-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ10.0mm

    • 320-1100nm Silicon-based Bias Photodetector, Sensitive Area Φ10.0mm

    IdealPhotonics' silicon-based bias photodetector has a light sensitivity range covering 200nm to 1100nm. It features extremely low noise, fast response, no gain, and low cost. It is suitable for conventional optoelectronic detection applications, offering excellent performance and high cost-effectiveness. Comprehensive orientation technical support is provided, and it is commonly used for ultraviolet and visible light measurement.

    产品特点Sensitivity range 200nm-1100nm, commonly used for ultraviolet and visible light measurement、 Bias-type detector with extremely low noise, fast response, and no gain、 Low cost, suitable for conventional optoelectronic detection applications、 Excellent performance, high cost-effectiveness, and full technical support、 Provide customization services

    产品货号E80043164

    应用领域Ultraviolet and visible light measurement

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    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Main Parameters

    Parameter

    Value

    Wavelength Range

    200-1100nm

    350-1100nm

    320-1100nm

    Active area

    Φ1.0mm

    Φ3.6mm

    Φ10.0mm

    Bandwidth Range

    350MHz

    25MHz

    10MHz

    Rise Time (@50Ω)

    1ns

    14ns

    35ns

    NEP

    5.0 × 10-14W/H z1/2

    1.6 × 10-14W/Hz1/2

    2.4 × 10-14W/Hz1/2

    Dark Current

    0.3nA(Typ.)/10 nA(Max)

    0.35nA(Typ.)/6.0nA(Max)

    0.9nA(Typ.)/10nA(Max)

    Junction Capacitance

    6pF(Typ.)

    40pF(Typ.)

    150pF(Typ.)

    Bias Voltage

    10V

    Output Current

    0~10mA

    Output Voltage

    ~9V(Hi-Z)；

    ~170  mV(50Ω)

    Photosensitive Surface Depth

    0.09"  (2.2  m m)

    0.09"  (2.2  mm)

    0.13" (3.3mm)

    Operating Temperature

    10-40℃

    Storage Temperature

    -20-70℃

    Detector Net Weight

    0.10kg

    Undervoltage Indicator

    Vout  ≤9V(Hi-Z) Vout  ≤170mV(50Ω)

    Dimensions

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.8     mm X  22.5  mm)

    Power Supply Battery

    Power Switch

    Signal Interface

    Battery Monitoring

    Mounting Interface

    Optical Interface

    A23 ，12VDC ，40mAh

    Slide switch

    BNC Female

    Instant button

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     

     


    SI Response Curve:

    66c5442b670b2.jpg

     


    Attachment 1: Optional Configuration Table

    Silicon-based Bias Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range Sensitive Area

    Optional Configurations

    PD: "Photodetector"

    S: Si Silicon-based

    B: Bias type

    C: Conventional type

    2B10 ：200-1100nm ，Φ1.0mm






    3E36 ：350-1100nm ，Φ3.6mm






    3D100 ：320-1100nm ，Φ10.0m

    m


     

     

    Attachment 2: Model Number and Part Number Cross-Reference Table

    Model

    Part Number

    Specs

    PDSBC2B10

    A80153421

    200-1100nm Silicon-based Bias Photodetector, Active area Φ1.0mm, Rise Time 1ns, Bandwidth 350 MHz

    PDSBC3E36

    A80153422

    350-1100nm Silicon-based Bias Photodetector, Active area Φ3.6mm, Rise Time 14ns, Bandwidth 25 MHz

    PDSBC3D100

    A80153423

    320-1100nm Silicon-based Bias Photodetector, Active area Φ10.0mm, Rise Time 35ns, Bandwidth 10 MHz

     

     

    可选配置表
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