Parameter

Symbol

Unit

Test conditions

Min.

Typical

Max.

Reverse breakdown voltage

V_BR

V

22℃±3℃ , I_D =10μA

60

80

90

Responsivity

R_e

A/W

22℃±3℃, λ =1550nm ，M =1

0.8

0.85

Dark current

I_D

nA

22℃±3℃, M =10

0.1

0.3

Capacitance

C

pF

22℃±3℃ , M =10，f=1MHz

0.25

Breakdown voltage temperature coefficient

η

V/K

-40℃ ~80℃, I_D =10μA

0.15

Single photon detection efficiency PDE

%

-45℃, λ =1550nm, 0.1ph/pulse, Poisson distribution single photon source

20

-

Dark count rate DCR

kHz

-45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20%

-

-

20*

After pulse probability APP

-45℃, 1ns gate width, 2MHz gated repetition rate, 1MHz optical repetition rate, PDE=20%

-

-

1× 10^-3

Time jitter T_j

ps

-45℃, 1ns gate width, 2MHz gated repetition rate, PDE=20%

-

-

100