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Home/ Products/ PhotoDetectors/ Photodiode/ InGaAs photodiode/ Indium gallium arsenide InGaAs long wavelength photodiode 2.6 μ m
Indium gallium arsenide InGaAs long wavelength photodiode 2.6 μ m

P97MXXT2 series unit InGaAs detector 1.7um SWIR two-stage TEC TO package

Indium gallium arsenide InGaAs unit detector SWIR-II type 0.9-1.7um

900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength

900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package

800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm

Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm

High speed InGaAs PIN photodiode 600-1750nm TO-39 photosensitive surface 3mm

1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm

900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type
Indium Gallium Arsenide InGaAs Extended Photodiode 2.2um
Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)

900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type
Indium gallium arsenide InGaAs long wavelength photodiode 2.6 μ m
InGaAs photodiodes are mainly used for near-infrared detection, with characteristics such as high speed, high sensitivity, low noise, and a wide response range (0.5 μ m to 2.6 μ m).
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