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900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type
P97MXXT2 series unit InGaAs detector 1.7um SWIR two-stage TEC TO package
Indium gallium arsenide InGaAs unit detector SWIR-II type 0.9-1.7um
900-1700nm indium gallium arsenide InGaAs ultra large photosensitive surface photodiode (10mm) near-infrared wavelength
900-2700nm InGaAs photodiode two-stage TEC Φ 0.3~3mm TO8 package
800-2600nm high-speed indium gallium arsenide PIN photodiode with a diameter of 3.0mm/1.5mm
Indium gallium arsenide InGaAs (QPD) quadrant photodiode 600-1750nm TO-5 photosensitive surface 3mm
High speed InGaAs PIN photodiode 600-1750nm TO-39 photosensitive surface 3mm
1.0~2.6 μ m Extended InGaAs Photodiode with a diameter of 0.3 mm
Indium gallium arsenide InGaAs long wavelength photodiode 2.6 μ m
Indium Gallium Arsenide InGaAs Extended Photodiode 2.2um
Indium Gallium Arsenide InGaAs PIN Photodiode (2.7um Extended Type, Large Light Sensing Surface)
900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type
900-1700nm InGaAs Geiger mode avalanche photodiode cooled/uncooled type
InGaAs avalanche photodiode (APD) is a specialized device for short wave near-infrared single photon detection, which can meet the technical requirements of high-efficiency and low-noise single photon detection in fields such as quantum communication and weak light detection, achieving single photon detection at wavelengths of 0.9~1.7 μ m.Sherry
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