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首页 PhotoDetectors Amplified detectors Si Amplified Photodetector 350-1100nm silicon-based amplification photodetector 190-1100nm silicon-based amplification photodetector - adjustable gain 320-1100nm Silicon-based Amplified Photodetector, Photodetector Size Φ9.8mm

    • 320-1100nm Silicon-based Amplified Photodetector, Photodetector Size Φ9.8mm

    IdealPhotonics' silicon-based amplified photodetector covers a wavelength range from 190nm to 1100nm. It features 8 adjustable gain levels, enabling quantitative photoconversion with a wide dynamic range. It is suitable for various optoelectronic development scenarios, delivering excellent performance at a high cost-performance ratio. The device is widely used in UV and visible light measurements, with full technical support provided.

    产品特点Wavelength range of 190nm to 1100nm, ideal for UV and visible light measurements、 Amplified detector with 8 adjustable gain levels for quantitative photoconversion、 Wide dynamic range, suitable for diverse optoelectronic applications、 Excellent performance, cost-effective, with comprehensive technical support、 Customization options available

    产品货号E80043154

    应用领域UV and visible light measurements

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    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • General Parameters

    Parameters

    Value

    Wavelength Range

    350-1100nm

    190-1100n m

    320-1100n m

    190-1100nm

    Active area

    3.6mm×3.6mm

    Φ9.8mm

    Response Time Constant

    10ns

    0.5us

    35ns

    3us

    Bandwidth Range

    DC ～12MHz

    DC ～11MHz

    Gain Range

    Hi-Z Load: 0.51kV/A～4.75MV/A; 50Ω Load: 0.75kV/A～2.38MV/A

    Signal Amplitude

    Hi-Z Load: 0 ～10V; 50Ω Load: 0V～5V

    Gain Adjustment Method

    Rotary switch adjustment: 0～70dB, 10dB per step, 8 steps. Bandwidth inversely proportional to gain.

    Sensitive Surface Depth

    0.13"  (3.3  mm)

    Detector Weight

    0.10kg

    Operating Temperature

    10-40℃

    Storage Temperature

    -20-70℃

    Dimensions

    2.79" X 2.07" X 0.89"  (70.9  mm X     52.5  mm X  22.5  mm)

    NEP

    3.25~75.7 pW/Hz1/2

    2.12~69.7p W/Hz1/2

    2.67~71.7p W/Hz1/2

    1.33~45.1pW/Hz1/2

    Power Supply Interface

    Power Switch

     

    Signal Interface

    Gain Adjustment

    Mounting Interface

    Optical Interface

    LUMBERG  RSMV3  FE MALE

    Slide Switch With LED Indicator

     

    BNC Female Socket

    8-Step Rotary Knob

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     

     

    8-Stage Quantitative Adjustable Gain Parameters:

    0dB

    10dB

    20dB

    30dB

    Gain (Hi-Z)

    1.51× 103V/ A

    Gain (Hi-Z)

    4.75× 103V /A

    Gain (Hi-Z)

    1.5 × 104V/ A

    Gain (Hi-Z)

    4.75× 104 V/A

    Gain (50Ω)

    0.75× 103V/ A

    Gain (50Ω)

    2.38× 103V /A

    Gain (50Ω)

    0.75× 104V /A

    Gain (50Ω)

    2.38× 104 V/A

    Bandwidth (BW)

    12MHz

    Bandwidth (BW)

    1.6MHz

    Bandwidth (BW)

    1MHz

    Bandwidth (BW)

    260kHz

    Noise (RMS)

    258uV

    Noise (RMS)

    192uV

    Noise (RMS)

    207uV

    Noise (RMS)

    211uV

    40dB

    50dB

    60dB

    70dB

    Gain (Hi-Z)

    1.51× 105V/

    Gain (Hi-Z)

    4.75× 105V

    Gain (Hi-Z)

    1.5 × 106V/

    Gain (Hi-Z)

    4.75× 106


    A


    /A


    A


    V/A

    Gain (50Ω)

    0.75× 105V/ A

    Gain (50Ω)

    2.38× 105V /A

    Gain (50Ω)

    0.75× 106V /A

    Gain (50Ω)

    2.38× 106 V/A

    Bandwidth (BW)

    90MHz

    Bandwidth (BW)

    28MHz

    Bandwidth (BW)

    9kHz

    Bandwidth (BW)

    3kHz

    Noise (RMS)

    214uV

    Noise (RMS)

    234uV

    Noise (RMS)

    277uV

    Noise (RMS)

    388uV

    Signal Offset

    ±8mV(Typ.) ， ±12mV(Max)

     

     

    SI Response Curve：

    66c5442b670b2.jpg

     

     

    Attachment 1: Optional Configuration Table

    Silicon-Based Amplified Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range Photodetector Size

    Reserved Optional Configurations

    PD:"Photodetector"

    S: Si Silicon

    A: Amplified

    A: Adjustable Gain

    1A36：190-1100nm ，3.6 ×3.6

    mm






    1A98：190-1100nm，Φ9.8mm






    3D98：320-1100nm，Φ9.8mm






    3E36：350-1100nm ，3.6 ×3.6

    mm


     


    Attachment 2: Model and Part Number Correspondence Table

    Model

    Part Number

    Specs

    PDSAA1A36

    A80153413

    190-1100nm Silicon-Based Amplified Photodetector, Active area 3.6×3.6mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~ 12MHz

    PDSAA1A98

    A80153414

    190-1100nm Silicon-Based Amplified Photodetector, Active area Φ9.8mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~ 11MHz

    PDSAA3D98

    A80153415

    320-1100nm Silicon-Based Amplified Photodetector, Active area Φ9.8mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~ 11MHz

    PDSAA3E36

    A80153416

    350-1100nm Silicon-Based Amplified Photodetector, Active area 3.6×3.6mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~ 12MHz

     

    可选配置表
    产品资料

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