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首页 PhotoDetectors Amplified detectors Si Amplified Photodetector 200-1100nm silicon-based amplification photodetector - fixed gain 400-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ150μm

    • 400-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ150μm

    IdealPhotonics’ silicon-based amplified photodetector covers the wavelength range of 200nm to 1100nm, with fixed gain for quantitative photoconversion. It ensures high bandwidth performance while providing sufficient gain, ideal for fast and weak-light photodetection applications. It offers excellent performance, high cost-effectiveness, and technical support. Commonly used in UV and visible light measurements.

    产品特点Wavelength range: 200nm-1100nm, commonly used for UV and visible light measurements、 Amplified detector with fixed gain for quantitative photoconversion、 High gain and bandwidth for fast, weak-light photodetection applications、 Excellent performance and cost-effectiveness with technical support、 Customizable options available

    产品货号E80043153

    应用领域UV and visible light measurement.

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    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Main Parameters

     

    Parameters

    Value

    Parameter

    200-1100nm

    400-1000nm

    320-1100nm

    320-1000nm

    Active area

    Φ1.0mm

    Φ150um

    1.1mm×1.1mm

    Φ0.8mm

    Bandwidth Range

    DC ～150MHz

    DC～380MHz

    DC～20MHz

    DC～50MHz

     

    Gain Range

     

    Hi-Z Load: 1 × 10⁴ V/A; 50Ω Load: 5 × 10³ V/A

    Hi-Z Load: 5 × 10⁴ V/A; 50Ω Load: 2.5 × 10⁴ V/A

    1 × 10¹² V/A ± 10%

    Hi-Z Load: 100kV/A; 50Ω Load: 50kV/A

    Signal Amplitude

    Hi-Z Load: 0～10V; 50Ω Load: 0～5V

    Hi-Z Load: 0～10V; 50Ω Load: 0～5V

    0 ～10V

    Hi-Z Load: 0～3.6V; 50Ω Load: 0～1.8V

    NEP

    2.92× 10-11W/Hz1/2

    3.6 × 10-11W/Hz1/2

    3.0 × 10-15W/H z1/2

    7.8 × 10-12W/Hz1/2

    Photodetector Depth

    0.09"  (2.2  mm)

    0.20"  (5.0  mm)

    0.10"  (2.4  mm)

    0.07"  (1.8  mm)

    Operating Temperature

    10-50℃

    10-40℃

    10-50℃

    Storage Temperature

    -25-70℃

    Detector Weight

    0.10kg

    0.06kg

    Dimensions

    2.79" X  1.96" X 0.89"  (70.9  mm X 49.8     m

    m X 22.5  mm)

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.9     mm

    X 22.5  mm)

    Power Interface

    Power Supply

    Power Switch

    Signal Interface

    Support Rod Interface

    Optical Interface

    LUMBERG  R SMV3  FEMA LE

    LDS12B(DP), ±12V DC Steady voltage linear power supply, 6W, 220VAC

    Sliding Switch with LED Indicator

     

    BNC Female Connector

     

    M4 X 2

    SM1 X  1

    SM0.5 X  1


    SI Response Curve:

    66c5442b670b2.jpg


    Attachment 1: Optional Configuration Table

    Silicon-Based Amplified Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Feature

    Wavelength Range Photodetector Size

    Reserved Optional Configurations

    PD: "Photodetector"

    S: Si (Silicon-Based)

    A: Amplified

    F: Fixed Gain

    2B10：200-1100nm ，Φ1.0mm






    4F015：400-1000nm ，Φ150u

    m






    3D11：

    320-1100nm ，1.1mmX1.1

    mm






    3C8：320-1000nm ，Φ0.8mm


     

     

    Attachment 2: Model and Part Number Cross-Reference Table

    Model

    Part Number

    Specs

    PDSAF2B10

    A80153417

    200-1100nm Silicon-Based Amplified Photodetector, Active area Φ1.0mm, Fixed Gain 1 × 10⁴ V/A, Bandwidth Range DC ~ 150MHz

    PDSAF4F015

    A80153418

    400-1000nm Silicon-Based Amplified Photodetector, Active area Φ150um, Fixed Gain 5 × 10⁴ V/A, Bandwidth Range DC ~ 380MHz

    PDSAF3D11

    A80153419

    320-1100nm Silicon-Based Amplified Photodetector, Active area 1.1mm×1.1mm, Fixed Gain 1 × 10¹² V/A ± 10%, Bandwidth Range DC ~ 20MHz

    PDSAF3C8

    A80153420

    320-1000nm Silicon-Based Amplified Photodetector, Active area Φ0.8mm, Fixed Gain 100kV/A, Bandwidth Range DC ~ 50MHz


    可选配置表
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