• 350-1100nm Silicon-Based Photodetector with Amplification

    Idealphotonics' silicon-based amplified photodetector has a sensitive range of 350nm~1100nm, 8 levels of programmable adjustable gain, can achieve quantitative photoelectric conversion, and has a wide dynamic range. It is suitable for various optoelectronic development scenarios. 100% of the devices are domestically produced, with excellent performance and high cost performance. It provides all-round technical support and is often used in visible light and near-infrared light measurement.

    产品特点The photosensitive range covers 350nm~1100nm, and is often used for visible light and near-infrared light measurement、 Amplified detector, programmable 8-level adjustable gain, quantitative photoelectric conversion、 Wide dynamic range, suitable for various photoelectric development scenarios、 100% of the devices are domestically produced、 Excellent performance, high cost performance, all-round technical support、 Provide non-standard customization services

    产品货号A80153460

    应用领域Visible and near-infrared light measurements

    产品单价联系客服询价

    到货日期请咨询客服获得货期

    产品库存请咨询客服

    Sherry

    电话:16628709332

    邮箱:moli@microphotons.com

    主要参数
  • 核心参数
  • 尺寸图
  • General Parameters

     

    Parameter

    Value

    Wavelength Range

    350-1100nm

    Photosensitive size

    3.6mm×3.6mm

    Peak wavelength

    970nm (Typ.)

    Amplifier GBP

    230MHz

    Bandwidth Range

    DC 6.7MHz

    Gain Range

    Hi-Z Load: 1.5kV/A~4.7MV/A; 50Ω Load: 0.75kV/A~2.35MV/A

    Signal Amplitude

    Hi-Z Load: 0~10V; 50Ω Load: 0V~5V

    Gain Adjustment

    Programmable adjustment, 8 levels in total. Bandwidth is inversely proportional to gain.

    Photodetector Depth

    0.06"  (1.5 mm)

    Detector Weight

    0.01kg

    Operating Temperature

    10-40℃

    Storage Temperature

    -20-70℃

    Dimensions

    1.47" X 1.47" (37.34mm X  37.34mm)

    Power Interface

    Power Switch

    Signal Interface

    Gain Adjustment

    XH2.54mm 3Pin port

    Slide switch

    With LED indicator

    MMCX-KWE female elbow

    Programmable adjustment

     


    8-Step Adjustable Gain Parameters:

    0

    1

    10

    11

    Gain (Hi-Z)

    1.5× 103V/ A

    Gain (Hi-Z)

    4.7× 103V /A

    Gain (Hi-Z)

    1.5 × 104V/ A

    Gain (Hi-Z)

    4.7× 104 V/A

    Gain (50Ω)

    0.75× 103V/ A

    Gain (50Ω)

    2.35× 103V /A

    Gain (50Ω)

    0.75× 104V /A

    Gain (50Ω)

    2.35× 104 V/A

    Bandwidth (BW)

    6.7MHz

    Bandwidth (BW)

    920KHz

    Bandwidth (BW)

    600KHz

    Bandwidth (BW)

    160kHz

    Noise (RMS)

    258uV

    Noise (RMS)

    192uV

    Noise (RMS)

    207uV

    Noise (RMS)

    211uV

    100

    101

    110

    111

    Gain (Hi-Z)

    1.5× 105V/A

    Gain (Hi-Z)

    4.7× 105V/A

    Gain (Hi-Z)

    1.5 × 106V/A

    Gain (Hi-Z)

    4.7 × 106V/A

    Gain (50Ω)

    0.75× 105V/ A

    Gain (50Ω)

    2.35× 105V /A

    Gain (50Ω)

    0.75× 106V /A

    Gain (50Ω)

    2.35× 106 V/A

    Bandwidth (BW)

    54MHz

    Bandwidth (BW)

    19MHz

    Bandwidth (BW)

    5kHz

    Bandwidth (BW)

    1.7kHz

    Noise (RMS)

    214uV

    Noise (RMS)

    234uV

    Noise (RMS)

    277uV

    Noise (RMS)

    388uV

    Signal Bias

    ±8mV(Typ.) , ±12mV(Max)

     

     

    SI Response Curve

    66c6cb8c0e260.png 

     

     

    Pin Definition

    66c6cb9ef013b.png


     

     

    Pin Definition


    Pin 1

    GND

    Pin 2

    A

    Pin 3

    B

    Pin 4

    C


    Note: Pin2, Pin3, Pin4: A, B, C are used to adjust the gain.

     


    Pin Definition

    C

    B

    A

    1.5×103V/A

    0

    0

    0

    4.7×103V/A

    0

    0

    1

    1.5×104V/A

    0

    1

    0

    4.7×104V/A

    0

    1

    1

    1.5×105V/A

    1

    0

    0

    4.7×105V/A

    1

    0

    1

    1.5×106V/A

    1

    1

    0

    4.7×106V/A

    1

    1

    1



    Attachment 1: Optional Configuration Table

    Silicon-Based Amplified Photodetector

    Optional Configurations

    Product Name

    Material

    Type

    Feature

    Wavelength Range Photodetector Size

    Reserved Optional Configurations

    PD:"Photodetector"

    S: Si Silicon

    A: Amplified

    A: Adjustable Gain

    3E36:350-1100nm 3.6 ×3.6

    mm

    Devices are made in China: C

     


    Attachment 2:Model Number and Part Number Correspondence

    PN#

    NO.

    Specs

    PDSAA3E36C

    A80153460

    350-1100nm Silicon-based Amplified Photodetector, Active area 3.6 × 3.6 mm,Programmable eight-speed quantitative adjustable gain, bandwidth range DC ~ 6.7MHz.

     


    可选配置表
    产品资料

    新品推荐

    • 精品现货
    • 非标定制
    • 质量保证
    • 产品研发
    • 顺丰速运