• 320-1000nm Silicon-based Amplified Photodetector, Photodetector Size Φ0.8mm

    The Silicon-based Amplified Photodetector from IdealPhotonics covers a wavelength range of 200nm to 1100nm, featuring fixed gain for quantitative photoconversion. It provides sufficient gain while ensuring high bandwidth performance, making it suitable for the development of photodetection applications involving weak light intensity and fast speeds. It delivers excellent performance and high cost-efficiency, along with Quan-level technical support. Commonly used in ultraviolet (UV) and visible light measurement.

    产品特点Wavelength range: 200nm to 1100nm, commonly used in ultraviolet and visible light measurements、 Amplified detector with fixed gain for quantitative photoconversion、 Ensures high bandwidth and sufficient gain, ideal for photodetection with weak light intensity and fast speeds、 Excellent performance with high cost-effectiveness and full technical support、 Customization services available

    产品货号E80043151

    应用领域Ultraviolet (UV) and visible light measurement

    产品单价联系客服询价

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    Sherry

    电话:16628709332

    邮箱:moli@microphotons.com

    主要参数
  • 核心参数
  • 尺寸图
  • Main Parameters

    Parameters

    Value

    Wavelength Range

    200-1100nm

    400-1000nm

    320-1100nm

    320-1000nm

    Active area

    Φ1.0mm

    Φ150um

    1.1mm×1.1mm

    Φ0.8mm

    Bandwidth Range

    DC 150MHz

    DC~380MHz

    DC~20MHz

    DC~50MHz

     

    Gain Range

    Hi-Z Load: 1 × 10⁴ V/A; 50Ω Load: 5 × 10³ V/A

    Hi-Z Load: 5 × 10⁴ V/A; 50Ω Load: 2.5 × 10⁴ V/A

    1 × 10¹² V/A ±10%

    Hi-Z Load: 100kV/A; 50Ω Load: 50kV/A

    Signal Amplitude

    Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V

    Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V

    0 ~10V

    Hi-Z Load: 0~3.6V; 50Ω Load: 0~1.8V

    NEP

    2.92× 10-11W/Hz1/2

    3.6 × 10-11W/Hz1/2

    3.0 × 10-15W/H z1/2

    7.8 × 10-12W/Hz1/2

    Photodetector Depth

    0.09"  (2.2  mm)

    0.20"  (5.0  mm)

    0.10"  (2.4  mm)

    0.07"  (1.8  mm)

    Operating Temperature

    10-50℃

    10-40℃

    10-50℃

    Storage Temperature

    -25-70℃

    Detector Net Weight

    0.10kg

    0.06kg

    Dimensions

    2.79" X  1.96" X 0.89"  (70.9  mm X 49.8     m

    m X 22.5  mm)

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.9     mm

    X 22.5  mm)

    Power Supply Interface

    Power Supply

    Power Switch

    Signal Interface

    Support Rod Interface

    Optical Interface

    LUMBERG  R SMV3  FEMA LE

    LDS12B(DP), ±12 VD, C Linear Power Supply, 6W, 220VAC

    Slide switch with LED indicator

     

    BNC Female Socket

     

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     


    SI Response Curve:

    66c5442b670b2.jpg


    Attachment 1: Optional Configuration Table

    Silicon-Based Amplifying Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range Photodetector Size

    Reserved Optional Configuration

    PD: "Photodetector"

    S: Si Silicon-based

    A: Amplifying Type

    F: Fixed Gain

    2B10:200-1100nm Φ1.0mm






    4F015:400-1000nm Φ150u

    m






    3D11:

    320-1100nm 1.1mmX1.1

    mm






    3C8:320-1000nm Φ0.8mm


     

     

    Attachment 2:Model and Part Number Comparison Table

    Model

    Part Number

    Specs

    PDSAF2B10

    A80153417

    200-1100nm Silicon-based Amplifying Photodetector, Active area Φ1.0mm, Fixed Gain 1 × 10⁴V/A, Bandwidth DC ~ 150MHz

    PDSAF4F015

    A80153418

    400-1000nm Silicon-based Amplifying Photodetector, Active area Φ150µm, Fixed Gain 5 × 10⁴V/A, Bandwidth DC ~ 380MHz

    PDSAF3D11

    A80153419

    320-1100nm Silicon-based Amplifying Photodetector, Active area 1.1mm × 1.1mm, Fixed Gain 1 × 10¹²V/A ± 10%, Bandwidth DC ~ 20MHz

    PDSAF3C8

    A80153420

    320-1000nm Silicon-based Amplifying Photodetector, Active area Φ0.8mm, Fixed Gain 100kV/A, Bandwidth DC ~ 50MHz


    可选配置表
    产品资料

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