The Silicon-based Amplified Photodetector from IdealPhotonics covers a wavelength range of 200nm to 1100nm, featuring fixed gain for quantitative photoconversion. It provides sufficient gain while ensuring high bandwidth performance, making it suitable for the development of photodetection applications involving weak light intensity and fast speeds. It delivers excellent performance and high cost-efficiency, along with Quan-level technical support. Commonly used in ultraviolet (UV) and visible light measurement.
产品特点Wavelength range: 200nm to 1100nm, commonly used in ultraviolet and visible light measurements、 Amplified detector with fixed gain for quantitative photoconversion、 Ensures high bandwidth and sufficient gain, ideal for photodetection with weak light intensity and fast speeds、 Excellent performance with high cost-effectiveness and full technical support、 Customization services available
产品货号E80043151
应用领域Ultraviolet (UV) and visible light measurement
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Sherry
电话:16628709332
邮箱:moli@microphotons.com
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Main Parameters
Parameters | Value | ||||
Wavelength Range | 200-1100nm | 400-1000nm | 320-1100nm | 320-1000nm | |
Active area | Φ1.0mm | Φ150um | 1.1mm×1.1mm | Φ0.8mm | |
Bandwidth Range | DC ~150MHz | DC~380MHz | DC~20MHz | DC~50MHz | |
Gain Range | Hi-Z Load: 1 × 10⁴ V/A; 50Ω Load: 5 × 10³ V/A | Hi-Z Load: 5 × 10⁴ V/A; 50Ω Load: 2.5 × 10⁴ V/A | 1 × 10¹² V/A ±10% | Hi-Z Load: 100kV/A; 50Ω Load: 50kV/A | |
Signal Amplitude | Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V | Hi-Z Load: 0 ~10V; 50Ω Load: 0~5V | 0 ~10V | Hi-Z Load: 0~3.6V; 50Ω Load: 0~1.8V | |
NEP | 2.92× 10-11W/Hz1/2 | 3.6 × 10-11W/Hz1/2 | 3.0 × 10-15W/H z1/2 | 7.8 × 10-12W/Hz1/2 | |
Photodetector Depth | 0.09" (2.2 mm) | 0.20" (5.0 mm) | 0.10" (2.4 mm) | 0.07" (1.8 mm) | |
Operating Temperature | 10-50℃ | 10-40℃ | 10-50℃ | ||
Storage Temperature | -25-70℃ | ||||
Detector Net Weight | 0.10kg | 0.06kg | |||
Dimensions | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 m m X 22.5 mm) | 2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm) | |||
Power Supply Interface | Power Supply | Power Switch | Signal Interface | Support Rod Interface | Optical Interface |
LUMBERG R SMV3 FEMA LE | LDS12B(DP), ±12 VD, C Linear Power Supply, 6W, 220VAC | Slide switch with LED indicator |
BNC Female Socket |
M4 X 2 | SM1 X 1 SM0.5 X 1 |
SI Response Curve:
Attachment 1: Optional Configuration Table
Silicon-Based Amplifying Photodetector | Optional Configuration | ||||
Product Name | Material | Type | Features | Wavelength Range Photodetector Size | Reserved Optional Configuration |
PD: "Photodetector" | S: Si Silicon-based | A: Amplifying Type | F: Fixed Gain | 2B10:200-1100nm ,Φ1.0mm | |
4F015:400-1000nm ,Φ150u m | |||||
3D11: 320-1100nm ,1.1mmX1.1 mm | |||||
3C8:320-1000nm ,Φ0.8mm |
Attachment 2:Model and Part Number Comparison Table
Model | Part Number | Specs |
PDSAF2B10 | A80153417 | 200-1100nm Silicon-based Amplifying Photodetector, Active area Φ1.0mm, Fixed Gain 1 × 10⁴V/A, Bandwidth DC ~ 150MHz |
PDSAF4F015 | A80153418 | 400-1000nm Silicon-based Amplifying Photodetector, Active area Φ150µm, Fixed Gain 5 × 10⁴V/A, Bandwidth DC ~ 380MHz |
PDSAF3D11 | A80153419 | 320-1100nm Silicon-based Amplifying Photodetector, Active area 1.1mm × 1.1mm, Fixed Gain 1 × 10¹²V/A ± 10%, Bandwidth DC ~ 20MHz |
PDSAF3C8 | A80153420 | 320-1000nm Silicon-based Amplifying Photodetector, Active area Φ0.8mm, Fixed Gain 100kV/A, Bandwidth DC ~ 50MHz |
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