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首页 PhotoDetectors Amplified detectors Si Amplified Photodetector 200-1100nm silicon-based amplification photodetector - fixed gain 320-1100nm Silicon-based Amplifying Photodetector, Photodetector Size 1.1mm × 1.1m

    • 320-1100nm Silicon-based Amplifying Photodetector, Photodetector Size 1.1mm × 1.1m

    IdealPhotonics' silicon-based amplified photodetector covers a wavelength range of 200nm–1100nm, with fixed gain. It is suitable for ultraviolet and visible light measurements, offering high bandwidth performance ideal for applications involving weak light intensity and fast speeds, with excellent performance and cost-effectiveness.

    产品特点Wavelength range: 200nm–1100nm, commonly used for ultraviolet and visible light measurements、 Amplified detector with fixed gain, enabling quantitative photoconversion、 High bandwidth performance, suitable for applications with weak light intensity and fast speeds、 Excellent performance, high cost-performance ratio, with technical support、 Customization Available

    产品货号E80043152

    应用领域Ultraviolet and visible light measurement

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    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Main Parameters

     

    Parameter

    Value

    Wavelength Range

    200-1100nm

    400-1000nm

    320-1100nm

    320-1000nm

    Active area

    Φ1.0mm

    Φ150um

    1.1mm×1.1mm

    Φ0.8mm

    Bandwidth Range

    DC ～150MHz

    DC～380MHz

    DC～20MHz

    DC～50MHz

     

    Gain Range

    Hi-Z load: 1 × 10⁴V/A; 50Ω load: 5 × 10³V/A

    Hi-Z load: 5 × 10⁴V/A; 50Ω load: 2.5 × 10⁴V/A

    1 × 10¹²V/A ±10%

    Hi-Z load: 100kV/A; 50Ω load: 50kV/A

    Signal Amplitude

    Hi-Z load: 0 ～10V; 50Ω load: 0～5V

    Hi-Z load: 0 ～10V; 50Ω load: 0～5V

    0 ～10V

    Hi-Z load: 0～3.6V; 50Ω load: 0 ~ 1.8V

    NEP

    2.92× 10-11W/Hz1/2

    3.6 × 10-11W/Hz1/2

    3.0 × 10-15W/H z1/2

    7.8 × 10-12W/Hz1/2

    Photodetector Depth

    0.09"  (2.2  mm)

    0.20"  (5.0  mm)

    0.10"  (2.4  mm)

    0.07"  (1.8  mm)

    Operating Temperature

    10-50℃

    10-40℃

    10-50℃

    Storage Temperature

    -25-70℃

    Detector Weight

    0.10kg

    0.06kg

    Dimensions

    2.79" X  1.96" X 0.89"  (70.9  mm X 49.8     m

    m X 22.5  mm)

    2.79" X  1.96" X  0.89"  (70.9  mm X 49.9     mm

    X 22.5  mm)

    Power Interface

    Power Supply

    Power Switch

    Signal Interface

    Support Rod Interface

    Optical Interface

    LUMBERG  R SMV3  FEMA LE

    LDS12B(DP), ±12 VDC Stabilized Linear Power Supply, 6W, 220VAC

    Sliding Switch with LED Indicator

    BNC Female Socket

    M4 X 2

    SM1 X  1

    SM0.5 X  1



    SI Response Curve:

    66c5442b670b2.jpg



    Attachment 1: Optional Configuration Table

    Silicon-based Amplified Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range Photodetector Size

    Reserved Optional Configurations

    PD: "Photodetector"

    S: Si Silicon-Based

    A: Amplified

    F: Fixed Gain

    2B10：200-1100nm ，Φ1.0mm






    4F015：400-1000nm ，Φ150u

    m






    3D11：

    320-1100nm ，1.1mmX1.1

    mm






    3C8：320-1000nm ，Φ0.8mm


     


    Attachment 2：Model and Part Number Reference Table

    Model

    Part Number

    Specs

    PDSAF2B10

    A80153417

    200-1100nm Silicon-based Amplified Photodetector, Active area: Φ1.0mm, Fixed Gain: 1 × 10⁴ V/A, Bandwidth: DC ~ 150MHz

    PDSAF4F015

    A80153418

    400-1000nm Silicon-based Amplified Photodetector, Active area: Φ150um, Fixed Gain: 5 × 10⁴ V/A, Bandwidth: DC ~ 380MHz

    PDSAF3D11

    A80153419

    320-1100nm Silicon-based Amplified Photodetector, Active area: 1.1mm × 1.1mm, Fixed Gain: 1 × 10¹² V/A ± 10%, Bandwidth: DC ~ 20MHz

    PDSAF3C8

    A80153420

    320-1000nm Silicon-based Amplified Photodetector, Active area: Φ0.8mm, Fixed Gain: 100kV/A, Bandwidth: DC ~ 50MHz

     


    可选配置表
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