320-1100nm Silicon-based Amplifying Photodetector, Photodetector Size 1.1mm × 1.1m

320-1100nm Silicon-based Amplifying Photodetector, Photodetector Size 1.1mm × 1.1m

IdealPhotonics' silicon-based amplified photodetector covers a wavelength range of 200nm–1100nm, with fixed gain. It is suitable for ultraviolet and visible light measurements, offering high bandwidth performance ideal for applications involving weak light intensity and fast speeds, with excellent performance and cost-effectiveness.

Product features：Wavelength range: 200nm–1100nm, commonly used for ultraviolet and visible light measurements、 Amplified detector with fixed gain, enabling quantitative photoconversion、 High bandwidth performance, suitable for applications with weak light intensity and fast speeds、 Excellent performance, high cost-performance ratio, with technical support、 Customization Available

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Application area：Ultraviolet and visible light measurement

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Main parameters
General Parameters
Optional Configurations
Downloads

Main parameters

Core parameters

Dimension Drawing

General Parameters

Main Parameters

Parameter	Value
Wavelength Range	200-1100nm	400-1000nm	320-1100nm	320-1000nm
Active area	Φ1.0mm	Φ150um	1.1mm×1.1mm	Φ0.8mm
Bandwidth Range	DC ～150MHz	DC～380MHz	DC～20MHz	DC～50MHz
Gain Range	Hi-Z load: 1 × 10⁴V/A; 50Ω load: 5 × 10³V/A	Hi-Z load: 5 × 10⁴V/A; 50Ω load: 2.5 × 10⁴V/A	1 × 10¹²V/A ±10%	Hi-Z load: 100kV/A; 50Ω load: 50kV/A
Signal Amplitude	Hi-Z load: 0 ～10V; 50Ω load: 0～5V	Hi-Z load: 0 ～10V; 50Ω load: 0～5V	0 ～10V	Hi-Z load: 0～3.6V; 50Ω load: 0 ~ 1.8V
NEP	2.92× 10^-11W/Hz^1/2	3.6 × 10^-11W/Hz^1/2	3.0 × 10^-15W/H z^1/2	7.8 × 10^-12W/Hz1/2
Photodetector Depth	0.09" (2.2 mm)	0.20" (5.0 mm)	0.10" (2.4 mm)	0.07" (1.8 mm)
Operating Temperature	10-50℃	10-40℃	10-50℃
Storage Temperature	-25-70℃
Detector Weight	0.10kg			0.06kg
Dimensions	2.79" X 1.96" X 0.89" (70.9 mm X 49.8 m m X 22.5 mm)		2.79" X 1.96" X 0.89" (70.9 mm X 49.9 mm X 22.5 mm)
Power Interface	Power Supply	Power Switch	Signal Interface	Support Rod Interface	Optical Interface
LUMBERG R SMV3 FEMA LE	LDS12B(DP), ±12 VDC Stabilized Linear Power Supply, 6W, 220VAC	Sliding Switch with LED Indicator	BNC Female Socket	M4 X 2	SM1 X 1 SM0.5 X 1

SI Response Curve:

Attachment 1: Optional Configuration Table

Silicon-based Amplified Photodetector	Optional Configuration
Product Name	Material	Type	Features	Wavelength Range Photodetector Size	Reserved Optional Configurations
PD: "Photodetector"	S: Si Silicon-Based	A: Amplified	F: Fixed Gain	2B10：200-1100nm ，Φ1.0mm
				4F015：400-1000nm ，Φ150u m
				3D11： 320-1100nm ，1.1mmX1.1 mm
				3C8：320-1000nm ，Φ0.8mm

Attachment 2：Model and Part Number Reference Table

Model	Part Number	Specs
PDSAF2B10	A80153417	200-1100nm Silicon-based Amplified Photodetector, Active area: Φ1.0mm, Fixed Gain: 1 × 10⁴ V/A, Bandwidth: DC ~ 150MHz
PDSAF4F015	A80153418	400-1000nm Silicon-based Amplified Photodetector, Active area: Φ150um, Fixed Gain: 5 × 10⁴ V/A, Bandwidth: DC ~ 380MHz
PDSAF3D11	A80153419	320-1100nm Silicon-based Amplified Photodetector, Active area: 1.1mm × 1.1mm, Fixed Gain: 1 × 10¹² V/A ± 10%, Bandwidth: DC ~ 20MHz
PDSAF3C8	A80153420	320-1000nm Silicon-based Amplified Photodetector, Active area: Φ0.8mm, Fixed Gain: 100kV/A, Bandwidth: DC ~ 50MHz

Optional Configurations

Downloads

320-1100nm Silicon-based Amplifying Photodetector, Photodetector Size 1.1mm × 1.1m.pdf