The PDAM20A6B4G-InGaAS photodetector is a fixed-gain photodetector with a rated bandwidth, used to detect optical signals. The optical signal is input from the photoelectric sensor sensing surface and output in the form of voltage through the BNC. This product can measure optical signals in the wavelength range of 800nm to 1700nm. For specific performance parameter data, please refer to the appendix table. The photodetector housing has a mounting hole with a British 1/4"-20 thread, which can be easily installed and fixed. The housing also comes with two different sizes of threaded rings, which are suitable for industrial applications and scientific research applications respectively, and can be easily adapted to external optical components such as filters, attenuators, lenses, FC fiber adapters, etc. The product includes a plastic dust cover. For specific installation, please refer to Chapter 3. Each photodetector is equipped with a DC linear power supply with an output of ±9V. The input rated voltage of the DC power supply is 220VAC/50HZ.
产品特点Low noise, less than ±1mV、 Small overshoot, overshoot voltage less than 2.5%、 Gain stability: gain error less than 1%、 Dark bias voltage output noise: less than 1mV (rms)
产品货号E80040126
应用领域Display panel inspection、 LED lighting flicker analysis、 Toy lamp flicker frequency and power measurement、 Gas analysis
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Sherry
电话:16628709332
邮箱:moli@microphotons.com
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General parameter:
Parameter
PN# | PDAM005B-Si | PDAM36A5B6G-SI | PDAM20A6B4G-InGa As |
Electrical characteristics | |||
Input voltage | ±9VDC, 60mA | ±9VDG 100mA | ±9VDC. 100mA |
Probe | Silicon PIN | Silicon PIN | InGaAs PIN |
Photosensitive surface | 2.65mm * 2.65mm | 3.6mm * 3.6mm | Diameters@2 mm |
800 nm - 1700 nm (Optional Extended 2600nm) | |||
Wavelength | 400 nm - 1100 nm | 320 nm - 1100 nm | |
Peak response | 0.62A/W @850nm | 0.6 A/W @960nm | 0.9 A/W@ 1550nm |
43.6mV/uW @850nm | 1 mV/nW @960nm | 9mV/uW@ 1550nm | |
Saturated optical power | 113pW@ 850nm (Hi- | 6uW @960nm (Hi-Z) | 660 uW@ 1550nm (Hi |
Z) | -Z) | ||
Bandwidth | DC •-5MHz | DC - 200kHz | DC - 5MHz |
NEP | 7.2 pW/4HZ1/2 | 2.2 pW/HZ1/2 | 64.5 pW/HZ1/2 |
Output noise (RMS) | 700 uV | 1 mV ・typ | 1.3 mV .typ |
Dark current bias (MAX) | ±5 mV | ± 1 mV | ±5 mV |
Rising edge/falling edge (10%-90%) | 65 ns | 1.7 us | 68ns |
Output voltage | |||
Hi-Z | 0- SV (Hi-Z) | 0-6V (Hi-Z) | 0-6V (Hi-Z) |
500 | 0 • 2.5V (50ohm) | 0 • 25V (50ohm) | 0 • 25V (50ohm) |
Gain multiple | |||
Hi-Z | 67.5 kV/A | 1.68 MV/A | 10 kV/A |
500 | 33.8 kV/A | 0.84 MV/A | 5kV/A |
Gain accuracy (typ) | ± 1% | ± 1% | ± 1% |
Other parameters | |||
Toggle switch | Toggle switch | Toggle switch | |
Output interface | BNC | BNC | BNC |
Dimensions | 53*50*50mm | 53*50*50mm | 53*50*50mm |
Weight | 150g | 150g | 150g |
Operating temperature | 10-50deg | 10-50deg | 10-50deg |
Storage temperature | ・25 °C - 70 °C | -25 °C - 70 °C | -25 °C - 70 °C |
Silicon-based photodetector, with amplifier, fixed gain, model reference | ||||||||||
Gain | ||||||||||
PN# | Wavelength | Bandwidth | Rising time | Hi-Z load | 50Ωload | RMS Noise | NEP | Sensing area | Operating temperature | Power supply |
PDA12A8B4 G-VIS | 400 - 1100 nm | DC -140M Hz | 2.5 nS | 1* 104 V/ A | 5* 103 kV /A | 850µV .typ | 2* 10-11 W /√ HZ | 1.2mm* 1.2 mm | 10-50℃ | Included( ±9V) |
PDA12A7B4 G-VIS | 400 - 1100 nm | DC-50MH z | 7 nS | 5* 104 V/ A | 2.5* 104 k V/A | 800µV .typ | 6.3* 10-12 W/√ HZ | 1.2mm* 1.2 mm | 10-50℃ | Included ( ±9V) |
PDA25A6B4 G-VIS | 400 -1100nm | DC -5MHz | 68 nS | 1* 105 V/ A | 5* 104 V/ A | 700µV .typ | 5.3* 10-12 W/√ HZ | 2.5mm*2.5mm | 10-50℃ | Included ( ±9V) |
PDA36A5B6 G-VIS | 320 - 1100 nm | DC-200KHZ | 1.7 µS | 1.68* 106 V/A | 8.4* 105 V/A | 1mV . typ | 2.2* 10-12 W/√ HZ | 3.6mm*3.6mm | 10-50℃ | Included ( ±9V) |
PDA25A4B8 G-VIS | 400 - 1100 nm | DC- 20KHZ | 18 µS | 1* 108 V/ A | — | 1.5mV .typ | 1.8* 10-13 W/√ HZ | 2.5mm*2.5mm | 10-50℃ | Included ( ±9V) |
Spectral sensitivity
AC transfer characteristics
Appearance and installation
Test Cases:
Test light source:
PN: PL-DFB-9672.4-B-A81-PA
SN: DO3431e-q2-Bo2-A19
Test conditions :25℃ 、Laser current sweep 15-23mA ,The detector output is as follows:
This detector has high detection accuracy at 972nm and can detect weak light (tens of microwatts).
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