info@idealphotonics.com

Home/ Products/ PhotoDetectors/ Amplified detectors/ Si Amplified Photodetector/ Silicon Si amplification photodetector 320-1100nm (DC-5MHz/200kHz)/ 400-1100nm Silicon Amplified Photodetector (DC-5MHz)

    • 400-1100nm Silicon Amplified Photodetector (DC-5MHz)

    The PDAM20A6B4G-InGaAS photodetector is a fixed-gain photodetector with a rated bandwidth, used to detect optical signals. The optical signal is input from the photoelectric sensor sensing surface and output in the form of voltage through the BNC. This product can measure optical signals in the wavelength range of 800nm ​​to 1700nm. For specific performance parameter data, please refer to the appendix table. The photodetector housing has a mounting hole with a British 1/4"-20 thread, which can be easily installed and fixed. The housing also comes with two different sizes of threaded rings, which are suitable for industrial applications and scientific research applications respectively, and can be easily adapted to external optical components such as filters, attenuators, lenses, FC fiber adapters, etc. The product includes a plastic dust cover. For specific installation, please refer to Chapter 3. Each photodetector is equipped with a DC linear power supply with an output of ±9V. The input rated voltage of the DC power supply is 220VAC/50HZ.

    Product features：Low noise, less than ±1mV、 Small overshoot, overshoot voltage less than 2.5%、 Gain stability: gain error less than 1%、 Dark bias voltage output noise: less than 1mV (rms)

    Part Number：--

    Application area：Display panel inspection、 LED lighting flicker analysis、 Toy lamp flicker frequency and power measurement、 Gas analysis

    Add to Cart Consult Favorite

    Related Products

    Main parameters
  • Core parameters

  • Dimension Drawing
    • General Parameters

    General parameter:

    1.2.png

     

    Parameter

    PN#

    PDAM005B-Si

    PDAM36A5B6G-SI

    PDAM20A6B4G-InGa As

    Electrical characteristics




    Input voltage

    ±9VDC,  60mA

    ±9VDG  100mA

    ±9VDC.  100mA

    Probe

    Silicon  PIN

    Silicon  PIN

    InGaAs  PIN

    Photosensitive surface

    2.65mm  *  2.65mm

    3.6mm  *  3.6mm

    Diameters@2  mm




    800  nm  -  1700  nm   (Optional Extended      2600nm)

    Wavelength

    400  nm  -   1100  nm

    320  nm  -   1100  nm

    Peak response

    0.62A/W  @850nm

    0.6  A/W  @960nm

    0.9  A/W@ 1550nm


    43.6mV/uW  @850nm

    1  mV/nW  @960nm

    9mV/uW@ 1550nm

    Saturated optical power

    113pW@  850nm  (Hi-

    6uW  @960nm  (Hi-Z)

    660  uW@ 1550nm  (Hi

    Z)

    -Z)

    Bandwidth

    DC  •-5MHz

    DC  -  200kHz

    DC  -  5MHz

    NEP

    7.2  pW/4HZ1/2

    2.2  pW/HZ1/2

    64.5  pW/HZ1/2

    Output noise (RMS)

    700  uV

    1  mV  ・typ

    1.3  mV  .typ

    Dark current bias (MAX)

    ±5  mV

    ± 1  mV

    ±5  mV

    Rising edge/falling edge (10%-90%)

    65  ns

    1.7  us

    68ns

    Output voltage




    Hi-Z

    0-  SV  (Hi-Z)

    0-6V  (Hi-Z)

    0-6V  (Hi-Z)

    500

    0  •  2.5V  (50ohm)

    0  •  25V  (50ohm)

    0  •  25V  (50ohm)

    Gain multiple




    Hi-Z

    67.5  kV/A

    1.68  MV/A

    10  kV/A

    500

    33.8  kV/A

    0.84  MV/A

    5kV/A

    Gain accuracy (typ)

    ± 1%

    ± 1%

    ± 1%

    Other parameters





    Toggle switch

    Toggle switch

    Toggle switch

    Output interface

    BNC

    BNC

    BNC

    Dimensions

    53*50*50mm

    53*50*50mm

    53*50*50mm

    Weight

    150g

    150g

    150g

    Operating temperature

    10-50deg

    10-50deg

    10-50deg

    Storage temperature

    ・25 °C  -  70 °C

    -25 °C  -  70 °C

    -25 °C  -  70 °C

     

    Silicon-based photodetector, with amplifier, fixed gain, model reference





    Gain






    PN#

    Wavelength

    Bandwidth

    Rising time

    Hi-Z  load

    50Ωload

    RMS Noise

    NEP

    Sensing area

    Operating temperature

    Power supply

    PDA12A8B4 G-VIS

    400  - 1100  nm

    DC -140M Hz

    2.5  nS

    1* 104 V/ A

    5* 103 kV /A

    850µV .typ

    2* 10-11 W /√ HZ

    1.2mm* 1.2 mm

    10-50℃

    Included( ±9V）

    PDA12A7B4 G-VIS

    400  - 1100  nm

    DC-50MH z

    7  nS

    5* 104 V/ A

    2.5* 104 k V/A

    800µV .typ

    6.3* 10-12 W/√ HZ

    1.2mm* 1.2 mm

    10-50℃

    Included ( ±9V）

    PDA25A6B4 G-VIS

    400  -1100nm

    DC -5MHz

    68  nS

    1* 105 V/ A

    5* 104 V/ A

    700µV .typ

    5.3* 10-12 W/√ HZ

    2.5mm*2.5mm

    10-50℃

    Included ( ±9V）

    PDA36A5B6 G-VIS

    320  - 1100  nm

    DC-200KHZ

    1.7  µS

    1.68* 106 V/A

    8.4* 105 V/A

    1mV  . typ

    2.2* 10-12 W/√ HZ

    3.6mm*3.6mm

    10-50℃

    Included ( ±9V）

    PDA25A4B8 G-VIS

    400  - 1100  nm

    DC- 20KHZ

    18  µS

    1* 108 V/ A

    —

    1.5mV .typ

    1.8* 10-13 W/√ HZ

    2.5mm*2.5mm

    10-50℃

    Included ( ±9V）

     

     

    Spectral sensitivity

    1.3.png

    1.4.png



    AC transfer characteristics

    1.5.jpg

     

     

    Appearance and installation

    1.6.png

     


    Test Cases：

    Test light source：

    PN： PL-DFB-9672.4-B-A81-PA 

    SN： DO3431e-q2-Bo2-A19

    Test conditions ：25℃ 、Laser current sweep 15-23mA ，The detector output is as follows:

    [L1FX[2[_%QNH{11A2B(9D3.JPG

    This detector has high detection accuracy at 972nm and can detect weak light (tens of microwatts).

     


    Optional Configurations

    --

    Downloads

    No resources available

    • 10+ 10 Years of Experience
    • 50 50 + Countries Bussiness
    • 10000 10k + Diodes sold worldwide
    • 30 30+ Invention patent
    • 10 10+ Advanced Optical Solutions

    ⇪