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首页 PhotoDetectors Amplified detectors Si Amplified Photodetector 350-1100nm silicon-based amplification photodetector 190-1100nm silicon-based amplification photodetector - adjustable gain 190-1100nm Silicon-based Amplified Photodetector with 3.6×3.6mm Sensitive Are

    • 190-1100nm Silicon-based Amplified Photodetector with 3.6×3.6mm Sensitive Are

    The silicon-based amplified photodetector from Xiaoxiao Photon has a sensitive range covering 190nm to 1100nm, with 8 adjustable gain levels. It provides precise quantitative photoconversion and a wide dynamic range, making it suitable for various photonic development scenarios. It offers excellent performance and cost-effectiveness, with comprehensive technical support. The device is commonly used in UV and visible light measurements.

    产品特点Wavelength range: 190nm -1100nm, commonly used for UV and visible light measurements 、Amplified photodetector with 8 adjustable gain levels for precise quantitative photoconversion 、Wide dynamic range, adaptable to various photonic development scenarios 、High performance, cost-effective, with comprehensive technical support 、Customization options available

    产品货号A80153413

    应用领域UV and visible light measurements

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    主要参数
  • 核心参数

  • 尺寸图

    • General Parameters

     

    Parameter

    Value

    Wavelength Range

    350-1100nm

    190-1100n m

    320-1100n m

    190-1100nm

    Sensitive Area

    3.6mm×3.6mm

    Φ9.8mm

    Response Time Constant

    10ns

    0.5us

    35ns

    3us

    Bandwidth Range

    DC ～12MHz

    DC ～11MHz

    Gain Range

    Hi-Z Load: 0.51kV/A ~ 4.75MV/A; 50Ω Load: 0.75kV/A ~ 2.38MV/A

    Signal Amplitude

    Hi-Z Load: 0 ~ 10V; 50Ω Load: 0 ~ 5V

    Gain Adjustment

    Rotatable dial adjustment: 0~70dB, 10dB per step, 8 steps. Bandwidth inversely proportional to gain.

    Sensitive Depth

    0.13"  (3.3  mm)

    Detector Weight

    0.10kg

    Operating Temperature

    10-40℃

    Storage Temperature

    -20-70℃

    Dimensions

    2.79" X 2.07" X 0.89"  (70.9  mm X     52.5  mm X  22.5  mm)

    NEP

    3.25~75.7 pW/Hz1/2

    2.12~69.7p W/Hz1/2

    2.67~71.7p W/Hz1/2

    1.33~45.1pW/Hz1/2

    Power Supply Interface

    Power Switch

    Signal Interface

    Gain Adjustment

    Mounting Interface

    Optical Interface

    LUMBERG  RSMV3  FE MALE

    SlideSwitch with LED Indicator

    BNC Female

    8-step rotary knob

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     

    8-Step Quantitative Adjustable Gain Parameters

    0dB

    10dB

    20dB

    30dB

    Gain (Hi-Z)

    1.51× 103V/ A

    Gain (Hi-Z)

    4.75× 103V /A

    Gain (Hi-Z)

    1.5 × 104V/ A

    Gain (Hi-Z)

    4.75× 104 V/A

    Gain (50Ω)

    0.75× 103V/ A

    Gain (50Ω)

    2.38× 103V /A

    Gain (50Ω)

    0.75× 104V /A

    Gain (50Ω)

    2.38× 104 V/A

    Bandwidth (BW)

    12MHz

    Bandwidth (BW)

    1.6MHz

    Bandwidth (BW)

    1MHz

    Bandwidth (BW)

    260kHz

    Noise (RMS)

    258uV

    Noise (RMS)

    192uV

    Noise (RMS)

    207uV

    Noise (RMS)

    211uV

    40dB

    50dB

    60dB

    70dB

    Gain (Hi-Z)

    1.51× 105V/

    Gain (Hi-Z)

    4.75× 105V

    Gain (Hi-Z)

    1.5 × 106V/

    Gain (Hi-Z)

    4.75× 106


    A


    /A


    A


    V/A

    Gain (50Ω)

    0.75× 105V/ A

    Gain (50Ω)

    2.38× 105V /A

    Gain (50Ω)

    0.75× 106V /A

    Gain (50Ω)

    2.38× 106 V/A

    Bandwidth (BW)

    90MHz

    Bandwidth (BW)

    28MHz

    Bandwidth (BW)

    9kHz

    Bandwidth (BW)

    3kHz

    Noise (RMS)

    214uV

    Noise (RMS)

    234uV

    Noise (RMS)

    277uV

    Noise (RMS)

    388uV

    Signal Offset

    ±8mV(Typ.) ， ±12mV(Max)

     

    SI Response Curve：

     66c5442b670b2.jpg

     

    Attachment 1: Optional Configuration Table

    Silicon-based Amplified Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range Sensitive Area Size

    Optional Configuration

    PD:"Photodetector"

    S: Si Silicon-based

    A: Amplifying Type

    A: Adjustable Gain

    1A36：190-1100nm ，3.6 ×3.6

    mm






    1A98：190-1100nm，Φ9.8mm






    3D98：320-1100nm，Φ9.8mm






    3E36：350-1100nm ，3.6 ×3.6

    mm


     

    Attachment 2：Model and Part Number Correspondence Table

    Model

    Part Number

    Specs

    PDSAA1A36

    A80153413

    190-1100nm Silicon-based Amplified Photodetector, Sensitive Area: 3.6 × 3.6mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 12MHz

    PDSAA1A98

    A80153414

    190-1100nm Silicon-based Amplified Photodetector, Sensitive Area: Φ9.8mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 11MHz

    PDSAA3D98

    A80153415

    320-1100nm Silicon-based Amplified Photodetector, Sensitive Area: Φ9.8mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 11MHz

    PDSAA3E36

    A80153416

    350-1100nm Silicon-based Amplified Photodetector, Sensitive Area: 3.6 × 3.6mm, 0-70dB Adjustable Gain in 8 Steps, Bandwidth: DC ~ 12MHz

     

    可选配置表
    产品资料

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