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首页 PhotoDetectors Amplified detectors Si Amplified Photodetector 350-1100nm silicon-based amplification photodetector 190-1100nm silicon-based amplification photodetector - adjustable gain 350-1100nm Silicon-based Amplified Photodetector Photodetector Size: 3.6mm × 3.6m

    • 350-1100nm Silicon-based Amplified Photodetector Photodetector Size: 3.6mm × 3.6m

    IdealPhotonics' silicon-based amplified photodetector covers 190nm–1100nm with 8 adjustable gain settings, providing quantitative photoelectric conversion and a wide dynamic range. It is suitable for UV and visible light measurements, offering excellent performance and cost-efficiency.

    产品特点Light-sensitive range: 190nm~1100nm, commonly used in UV and visible light measurements、 Amplified detector with 8 adjustable gain settings for quantitative photoelectric conversion、 Wide dynamic range, suitable for various photoelectric development applications、 Excellent performance, cost-effective, with comprehensive technical support、 Custom solutions available

    产品货号E80043155

    应用领域Ultraviolet and visible light measurements

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    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • General Parameters

     

    Parameter

    Value

    Wavelength Range

    350-1100nm

    190-1100n m

    320-1100n m

    190-1100nm

    Active area

    3.6mm×3.6mm

    Φ9.8mm

    Response Time Constant

    10ns

    0.5us

    35ns

    3us

    Bandwidth Range

    DC ～12MHz

    DC ～11MHz

    Gain Range

    Hi-Z Load: 0.51kV/A～4.75MV/A; 50Ω Load: 0.75kV/A～2.38MV/A

    Signal Amplitude

    Hi-Z Load: 0～10V; 50Ω Load: 0V～5V

    Gain Adjustment

    Rotary switch: 0～70dB, 10dB per step, 8 steps; bandwidth inversely proportional to gain.

    Photodetector Depth

    0.13"  (3.3  mm)

    Detector Weight

    0.10kg

    Operating Temperature

    10-40℃

    Storage Temperature

    -20-70℃

    Dimensions

    2.79" X 2.07" X 0.89"  (70.9  mm X     52.5  mm X  22.5  mm)

    NEP

    3.25~75.7 pW/Hz1/2

    2.12~69.7p W/Hz1/2

    2.67~71.7p W/Hz1/2

    1.33~45.1pW/Hz1/2

    Power Interface

    Power Switch

    Signal Interface

    Gain Adjustment

    Mounting  Interface

    Optical Interface

    LUMBERG  RSMV3  FE MALE

    Sliding switch with LED indicator

    BNC Female Socket

    8 档旋钮

    M4 X 2

    SM1 X  1

    SM0.5 X  1

     

     

    8-Step Adjustable Gain Parameters：

    0dB

    10dB

    20dB

    30dB

    Gain (Hi-Z)

    1.51× 103V/ A

    Gain (Hi-Z)

    4.75× 103V /A

    Gain (Hi-Z)

    1.5 × 104V/ A

    Gain (Hi-Z)

    4.75× 104 V/A

    Gain (50Ω)

    0.75× 103V/ A

    Gain (50Ω)

    2.38× 103V /A

    Gain (50Ω)

    0.75× 104V /A

    Gain (50Ω)

    2.38× 104 V/A

    Bandwidth (BW)

    12MHz

    Bandwidth (BW)

    1.6MHz

    Bandwidth (BW)

    1MHz

    Bandwidth (BW)

    260kHz

    Noise (RMS)

    258uV

    Noise (RMS)

    192uV

    Noise (RMS)

    207uV

    Noise (RMS)

    211uV

    40dB

    50dB

    60dB

    70dB

    Gain (Hi-Z)

    1.51× 105V/

    Gain (Hi-Z)

    4.75× 105V

    Gain (Hi-Z)

    1.5 × 106V/

    Gain (Hi-Z)

    4.75× 106


    A


    /A


    A


    V/A

    Gain (50Ω)

    0.75× 105V/ A

    Gain (50Ω)

    2.38× 105V /A

    Gain (50Ω)

    0.75× 106V /A

    Gain (50Ω)

    2.38× 106 V/A

    Bandwidth (BW)

    90MHz

    Bandwidth (BW)

    28MHz

    Bandwidth (BW)

    9kHz

    Bandwidth (BW)

    3kHz

    Noise (RMS)

    214uV

    Noise (RMS)

    234uV

    Noise (RMS)

    277uV

    Noise (RMS)

    388uV

    Signal Bias

    ±8mV(Typ.) ， ±12mV(Max)


     

    SI Response Curve：

    66c5442b670b2.jpg


    Attachment 1: Optional Configuration Table

    Silicon-Based Amplified Photodetector

    Optional Configurations

    Product Name

    Material

    Type

    Feature

    Wavelength Range Photodetector Size

    Reserved Optional Configurations

    PD:"Photodetector"

    S: Si Silicon

    A: Amplified

    A: Adjustable Gain

    1A36：190-1100nm ，3.6 ×3.6

    mm






    1A98：190-1100nm，Φ9.8mm






    3D98：320-1100nm，Φ9.8mm






    3E36：350-1100nm ，3.6 ×3.6

    mm


     


    Attachment 2：Model Number and Part Number Correspondence

    Model

    Part Number

    Specs

    PDSAA1A36

    A80153413

    190-1100nm Silicon-based Amplified Photodetector, Active area 3.6 × 3.6 mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~12MHz

    PDSAA1A98

    A80153414

    190-1100nm Silicon-based Amplified Photodetector, Active area Φ9.8mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~11MHz

    PDSAA3D98

    A80153415

    320-1100nm Silicon-based Amplified Photodetector, Active area Φ9.8mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~11MHz

    PDSAA3E36

    A80153416

    350-1100nm Silicon-based Amplified Photodetector, Active area 3.6 × 3.6 mm, 0-70dB 8-step Adjustable Gain, Bandwidth DC ~12MHz

     

    可选配置表
    产品资料

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