IdealPhotonics' InGaAs bias photodetector covers a wavelength range of 500nm to 2600nm, with extremely low noise, fast response, no gain, and low cost. It is suitable for general photodetection applications and delivers excellent performance with a high cost-performance ratio. The company offers comprehensive technical support and customization services. It is commonly used for visible and infrared light measurements.
产品特点Wavelength range from 500nm to 2600nm, commonly used for visible and infrared light measurements、 Bias-type detector with extremely low noise, fast response, and no gain、 Low cost, suitable for standard photodetection applications、 Excellent performance with a high cost-performance ratio and comprehensive technical support、 Customization services available for non-standard requirements
产品货号E80043166
应用领域Visible and infrared light measurements
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Sherry
电话:16628709332
邮箱:moli@microphotons.com
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Main Parameters
Parameter | Value | ||||
Wavelength Range | 500-1700nm | 900-1700nm | 800-1700nm | 900-2600nm | |
Active area | Φ1.0mm | Φ1.0mm | Φ2.0mm | Φ0.5mm | Φ1.0mm |
Bandwidth Range | 70MHz | 35MHz | 11.7MHz | 20.6MHz | 14MHz |
Rise Time (@50Ω) | 5ns | 10ns | 30ns | 17ns | 25ns |
NEP | 2.0 × 10-14W/H z1/2 | 2.5 × 10-14W/H z1/2 | 1.3 × 10-13W/H z1/2 | 1.0 × 10-12W/H z1/2 | 1.5 × 10-12W/Hz1/2 |
Dark Current | 1.5nA(Typ.)/10 nA(Max) | 1.0nA(Typ.)/25 nA(Max) | 55nA(Typ.)/20 0nA(Max) | 2uA(Typ.)/20u A(Max) | 5uA(Typ.)/40uA(Max) |
Junction Capacitance | 50pF(Typ.) | 80pF(Typ.) | 100pF(Typ.) | 140pF(Typ.) | 500pF(Typ.) |
Bias Voltage | 5V | 1.8V | |||
Output Current | 0~5mA | ||||
Output Voltage | ~9V(Hi-Z); ~170 mV(50Ω) | ||||
Light-Sensitive Depth | 0.09" (2.2 mm) | ||||
Operating Temperature | 10-50℃ | ||||
Storage Temperature | -20-70℃ | ||||
Detector Net Weight | 0.10kg | ||||
Undervoltage Indicator | Vout ≤9V(Hi-Z) Vout ≤170mV(50Ω) | ||||
Dimensions | 2.79" X 1.96" X 0.89" (70.9 mm X 49.8 mm X 22.5 mm) | ||||
Power Supply Battery | Power Switch | Signal Interface | Battery Monitoring | Support Rod Interface | Optical Interface |
A23 ,12VDC,40mAh | Slide Switch | BNC Female Socket | Instantaneous Button | M4 X 2 | SM1 X 1 SM0.5 X 1 |
Response Curve:
Product Configurations:
Attachment 1: Optional Configuration Table
Silicon-based Biased Photodetector | Optional Configuration | ||||
Name | Material | Type | Features | Wavelength Range Light-Sensitive Size | Reserved Optional Configurations |
PD: "Photodetector" | J: InGaAs (Indium Gallium Arsenide) | B: Biased Type | C: Conventional Type | 5I10:500-1700nm ,Φ1.0mm | |
9N10:900-1700nm,Φ1.0mm | |||||
8J20:800-1700nm ,Φ2.0mm | |||||
9O5 :900-2600nm ,Φ0.5mm | |||||
9O10:900-2600nm,Φ1.0mm |
Attachment 2: Model and Product Number Correspondence Table
Model | Part Number | Specs |
PDJBC5I10 | A80153435 | 500-1700nm InGaAs biased photodetector, Active area Φ1.0mm, rise time 5ns, bandwidth 70MHz |
PDJBC9N10 | A80153436 | 900-1700nm InGaAs biased photodetector, Active area Φ1.0mm, rise time 10ns, bandwidth 35MHz |
PDJBC8J20 | A80153437 | 800-1700nm InGaAs biased photodetector, Active area Φ2.0mm, rise time 30ns, bandwidth 11.7MHz |
PDJBC9O5 | A80153438 | 900-2600nm InGaAs biased photodetector,Active area Φ0.5mm, rise time 17ns, bandwidth 20.6MHz |
PDJBC9O10 | A80153439 | 900-2600nm InGaAs biased photodetector, Active area Φ1.0mm, rise time 25ns, bandwidth 14MHz |
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