首页 PhotoDetectors Photodiode InAs photodiode InAs/InAsSb II type superlattice T2SL photoconductive (PC)/photovoltaic (PV) detector 1.6-15um

InAs/InAsSb II type superlattice T2SL photoconductive (PC)/photovoltaic (PV) detector 1.6-15um

概述

InAs/InAsSb II type superlattice T2SL photoconductive (PC)/photovoltaic (PV) detector 1.6-15um

Type II superlattice two-stage thermoelectric cooled infrared photodetector with excellent parameters. 3 ° wedge-shaped sapphire window (wAl2O3) prevents unnecessary interference effects. Various MWIR and LWIR type II superlattice (T2SL) photoconductive (PC) and photovoltaic (PV) detectors under development can operate at room temperature or under thermoelectric cooling. These detectors can achieve excellent parameters without the need for low-temperature cooling (LN2). They do not contain mercury or cadmium and comply with the RoHS directive. Superlattice materials are multilayer films formed by alternating growth of two different components in thin layers ranging from several nanometers to tens of nanometers, maintaining strict periodicity. In fact, they are specific forms of layered fine composite materials. Superlattice materials are classified into excellent, second, and third types of superlattices based on the type of heterojunction that forms them. Superlattices can be divided into the following types: 1. Constituent superlattices, 2. Doped superlattices, 3. Multidimensional superlattices, and 4. Strain superlattice

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