TeraSense系列太赫兹源

TeraSense TeraSense Terahertz Light Source

Overview

TeraSense TeraSense Terahertz Light Source

The TeraSense series terahertz source (IMPATT diode) is a silicon dual drift diode with a transmission area of 0.6 um, installed on a copper heat sink. The layers in a dual drift diode are: heavily doped (p+) region, moderately doped p region, moderately doped n region, and heavily doped (n+) region. The (p+) and (n+) regions allow for ohmic electrical contact with external circuits. This device generates and maintains oscillations through negative resistance. TeraSense now offers an upgraded version of terahertz sources. The upgraded IMPATT diode is equipped with a protective isolator, greatly improving the stability of output power. From now on, you can order IMPATT diodes with open WR flanges or detachable horn antennas. The typical RF output power optimized at 100 GHz can reach 2W.

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