400-828-1550
首页 Semiconductor Diodes VCSEL Laser Diode 1500-1600nm VCSEL laser diode VCSEL vertical cavity surface emitting semiconductor laser 1567/1550nm 1mW 1567nm VCSEL Vertical Cavity Surface Emitting Laser 1.0mW PL-VCSEL-1567-1-A81

    • 1567nm VCSEL Vertical Cavity Surface Emitting Laser 1.0mW PL-VCSEL-1567-1-A81

    Vertical-Cavity Surface-Emitting Laser (VCSEL) is a semiconductor laser that emits laser light perpendicular to the top surface. It is developed based on gallium arsenide semiconductor materials, which is different from LED (light emitting diode) and LD (laser diode). The structure consists of a mirror, an active layer and a metal contact layer. The two emitting mirrors are P-type and N-type Bragg emitters respectively. The active region is composed of quantum hydrazine, and a metal contact layer is made on the outer surface of the P-type DBR to form an ohmic contact, and a circular outlet is made on the P-type DBR to output the laser. It has a small far-field divergence angle, and the divergence angle beam is narrow and round; and the threshold current is low and the modulation frequency is high, which can reach 300KHz. Wavelength tuning can be achieved by changing the laser current and temperature. It is designed for high-speed fiber optic communication with built-in TEC and PD packaging.

    产品特点7 Pin Small size、 Aspheric lens cap、 Integrated TEC controlled temperature stabilization、 Output power 1.6mW、 Single mode, can pass C-L band、 With wide spectrum tuning range: >8nm、 Fast wavelength tuning (~100KHz)

    产品货号A80041037

    应用领域TDLAS measurement gas system、 Face recognition、 LiDAR、 Data center, cloud computing

    产品单价联系客服询价

    到货日期请咨询客服获得货期

    产品库存请咨询客服

    Daisy

    电话：18602170419

    邮箱：moli@microphotons.com

    加入询价单 在线咨询

    收藏

    相关产品

    主要参数
  • 核心参数

  • 尺寸图

    • Parameter

    Conditions: P = 20°C, IOP = 2.0mA, unless otherwise specified (P = chip backside temperature, controlled by TEC)

    Parameter

    Symbol

    Value

    Unit

    Min

    Typical

    Max


    Optical output peak power @ 25°C

    P

    1.0

    1.6


    mW

    Operating bias current

    Iop

    0

    18

    25

    mA

    Operating temperature range

    Top

    -40

    25

    85

    °C

    Threshold current

    Ith


    8

    12

    mA

    Slope efficiency (CW, Tc=25°C)

    Se

    0.14

    0.18


    mW/mA

    Laser drive voltage

    VCC

    0

    1.5

    2.5

    V

    Resistance

    RS


    50


    Ω

    Center wavelength Please specify the desired center wavelength in the order form

    Δλ

    1525


    1575

    nm

    Guaranteed tuning range Positive voltage applied will reduce peak wavelength

    λ

    8

    10


    nm

    Maximum frequency tuning response

    fmax

    100

    200

    -

    KHz

    Side mode suppression ratio

    SMSR

    30

    40


    dB

    Linewidth (-3dB half-height width), continuous bias = IOP

    σ



    300

    MHz

    Relative intensity noise

    RIN



    -128

    dB/Hz

    Tuning voltage

    Vture

    0

    Test Sheet

    Test Sheet

    V

    Tuning current

    Itune

    0

    -

    100

    μA

    Tec voltage

    VTEC


    0.35

    1.5

    V

    Tec current

    ITEC


    0.05

    0.6

    A


    Experimental data

    We conducted relevant experiments on VCSEL lasers and measured the relationship between the voltage, current and wavelength, as well as the frequency of the VCSEL lasers.

    5f93dd71b0fb2.png

    VCSEL spectrum

     

     5f93dd7222e33.png

    VCSEL laser measurement base

     


    Voltage vs. Wavelength

    5f93dd71a101a.png

    [@PO]8GGVHZ01RUEWIE9IF9.png

    We load the laser with a voltage of 4-18V, increase the voltage by one point every 2V, and measure the data as shown above. We will find that as the voltage increases, the wavelength decreases by about 8nm, presenting a negative and nearly linear curve.


    Relationship between current and wavelength

    5f93dd7229cd4.png

     

    We kept the voltage constant and adjusted the current from 13 to 25mA, testing it every 3mA. We found that with current adjustment, the wavelength size changed significantly and presented a positive linear curve.



    Loading different frequency variations

    1.png

    Loading 5V voltage, 20KHz frequency waveform   




    2.png   

    Loading 5V voltage, 60KHz frequency waveform




    3.png

    Loading 5V voltage, 40KHz frequency waveform   


    4.png  

     

    Loading 5V voltage, 80KHz frequency waveform

     5.png


    Loading 5V voltage, 100KHz frequency waveform  

    6.png  

     

    Loading 5V voltage, 120KHz frequency waveform

    7.png

    Loading 5V voltage, 140KHz frequency waveform


     


    Fix the voltage to 5V and adjust the frequency value to get the above figure. Our modulation frequency is very high, which can carry more information and respond faster.

     

     

    Structure

    5f923c9d24cbc.png

     

    The generation of VCSEL laser mainly consists of three parts, namely, laser working material, pump source and optical resonant cavity. The pump source is used to excite the working material, forming a particle number inversion and emitting laser. In the resonant cavity composed of the bottom and top reflectors, the oscillation is amplified in the laser cavity and output from the top reflector. The output light is only concentrated in the middle part without the oxide layer, forming a vertical cavity surface laser emission, thereby obtaining a stable, continuous, high-quality laser with a certain power.

    可选配置表
    产品资料

    暂无资料

    新品推荐

    • 精品现货
    • 非标定制
    • 质量保证
    • 产品研发
    • 顺丰速运