1600nm SOA COC Chip

首页 Semiconductor Diodes SOA Laser Diode Gain chip Semiconductor optical amplifier chip 1600nm SOA COC Chip

C-band SOA chip, 2500um, ridge waveguide

产品特点Carrier chip、 High gain, high saturation power、 High pulse modulation speed、 Polarization dependence

产品货号I80010007

应用领域

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Daisy

电话：18602170419

邮箱：moli@microphotons.com

相关产品

主要参数

核心参数

Center wavelength

1600nm

尺寸图

Main Parameters:

Parameters	Unit	Min	Typ	Max	Condition
Working wavelength	nm	1525		1572	C band
	nm	1572		1622	L band
	nm	1622		1672	U band
Small Signal Gain	dB	30			I_f=500mA,P_in=-15dBm
Small Signal Gain	dB	30			T_op =30℃,
Wavelength-dependent gain	dB			1	I_f=500mA, P_in =0dBm,
Wavelength-dependent gain	dB			1	T_op =30 ℃
Max. Output optical power	dBm	19			P_in =0dBm, I_f=500mA,
					T_op =30 oC,
					Integrated power
Saturated output power	dBm		16		3dB down, I_f=800mA
Noise Index	dB		4.5	6	I_f=300mA,
Noise Index	dB		4.5	6	P_in =-10dBm T_op =30 oC, TE module input
Fall/Rise time	ns			1	10%~90%
Forward voltage	V		1.5	1.8	I_f=I_OP
Series resistance	Ohms			9	Bar, slope 50mA 100mA
light entrance end NA	Deg.		23
Chip spot diameter	um		4.5	5
X Directional light divergence angle	Deg.		23	30	FWHM, I_f=I_OP
Y Directional light divergence angle	Deg.		23	30	FWHM, I_f=I_OP

Environment

Parameters	Unit	Min	Typ	Max	Condition
Operating temperature	°C	10	30	40	Top
Packaging		Sealed, nitrogen filled
Storage temperature	°C	-40		85
Short-term storage humidity	%			50
Long-term storage		It is recommended to store in nitrogen or vacuum

Appendix 1: Model and Part Number Comparison Table

可选配置表

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