Operating wavelength

λ_R

850nm

Threshold current

I_TH

1

mA

Output power

P_opt

0.5

1

mW

Threshold voltage

U_TH

1.8

V

Operating current

I_OP

3

mA

P_opt = 0.5mW

Operating voltage

U_OP

3

V

P_opt = 0.5 mW

Photoelectric conversion rate

η_WP

12

%

P_opt = 0.5 mW

Slope efficiency

η_S

0.3

W/A

Rise and fall time

T_r/T_f

90/120

Psec

Differential series resistance

R_S

100

200

Ω

P_opt = 0.5 mW

3dB modulation bandwidth

ν3dB

0.10

2.5

GHz

P_opt = 0.5 mW

Due to ESD protection diode

Relative noise intensity

RIN

-130

-120

dB/Hz

P_opt = 0.3 mW @ 1 GHz

Wavelength current tuning coefficient

0.6

nm/mA

Wavelength temperature tuning coefficient

0.06

nm/K

Thermistor (VCSEL chip)

R_thermal

3

5

K/mW

Side mode suppression ratio(SMSR)

35

dB

I = 2 mA

Beam divergence angle

θ

10

25

°

P_opt = 0.5mW, full width 1/e²

Spectral width

100

MHz

P_opt = 0.5 mW

Tec current

mA

-150(Heating)

+300(Cooling)

Proper Heart Sink Required

NTC Thermistor

KΩ

9.5

10.0

10.5

T=25℃@10 KΩ

NTC Thermistor

KΩ

10/exp{3892-(1/289K-I/TOP)}

Storage temperature

℃

-40

25

125

Chip temperature

℃

+10

25

40

Operating current

mA

0

3.0

5.0

Forward voltage

V

0.8

3.0

4.8

TEC current

mA

-150

-

+300

Soldering temperature*

℃

100

130

260

Power consumption

mw

-

-

5