Emission wavelength

λ_R

nm

759

760

761

T = 20°C, I_TEC = 0, P_OP = 0.3 mW

Threshold current

I_TH

mA

0.5

T = 20°C

Output power

P_opt

mW

0.3

T = 25°C

Laser current

I_OP

mA

2.0

2.0 P_opt = 0.3 mW

Laser voltage

U_OP

V

2.0

P_opt = 0.3 mW

Slope efficiency

η_S

W/A

0.3

T = 20°C

Differential series resistance

R_S

Ω

250

P_opt = 0.3 mW

3db modulation bandwidth

ν3dB

GHz

0.1

P_opt = 0.3 mW (ESD protection diodes)

Wavelength tuning current

nm/mA

0.6

Wavelength over temperature tuning

nm/K

0.06

Thermal resistance (VCSEL chip)

R_thermal

K/mW

3.0

5

Side mode suppression

dB

20

Beam divergence

θ

°

10

25

P_opt = 0.3 mW, full width 1/e²

Integrated TEC and thermistor

TEC current

mA

500

NTC thermistor

KΩ

10

10

11

T = 25°C

NTC temperature dependence

KΩ

10/exp[3892 · (1/298K-1/T_op)]