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首页 PhotoDetectors Amplified detectors InGaAs Amplified Photodetector 800-2600nm indium gallium arsenide amplifying photodetector - adjustable gain - infrared extension 800-2200nm infrared extended InGaAs amplified photodetector, response time constant 35ns

    • 800-2200nm infrared extended InGaAs amplified photodetector, response time constant 35ns

    Idealphotonics' infrared extended InGaAs amplified photodetector has a sensitivity range of 800nm~2600nm, 8 levels of adjustable gain, can achieve quantitative photoelectric conversion, and has a wide dynamic range. It is suitable for various optoelectronic development scenarios, has excellent performance, and is cost-effective. It provides all-round technical support and is often used in near- and mid-infrared light measurement.

    产品特点The photosensitive range covers 800nm~2600nm, which is often used for near-mid-infrared light measurement、 Amplified detector, 8-level adjustable gain, quantitative photoelectric conversion、 Wide dynamic range, suitable for various infrared photoelectric development scenarios、 Excellent performance, high cost performance, omnidirectional technical support、 Provide non-standard customization services

    产品货号E80043188

    应用领域Near and mid-infrared light measurement

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    电话：16628709332

    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Parameter

     

    Parameters

    Value

    Wavelength range

    800-2600nm

    800-2200nm

    Response time constant

    25ns

    35ns

    200ns

    Gain range

    Hi-Z load ：1.51kV/A～4.75MV/A；50Ω load ：0.75kV/A～2.38MV/A

    Signal amplitude

    Hi-Z load ：0 ～10V；50Ωload ：0～5V

    Gain adjustment method

    Rotary gear adjustment: 0~70dB, 10dB per gear, 8 gears in total. Bandwidth is inversely proportional to gain.

    NEP

    1.0 × 10-12W/Hz1/2

    1.0 × 10-13W/Hz1/2

    2.5 × 10-14W/Hz1/2

    Photosensitive size

    1mm×1mm

    1mm×1mm

    2mm×2mm

    Photosensitive surface depth

    0.13"     (3.3  mm)

    Detector net weight

    0.10kg

    Operating temperature

    10-40℃

    Storage temperature

    -20-70℃

    Appearance size

    2.79" X 2.07" X 0.89"  (70.9  mm X  52.5  mm X  22.5  mm)

    Power supply interface

    Power switch

    Signal interface

    Gain Adjustment

    Support rod interface

    Optical interface

    LUMBERG  R

    SMV3  FEMA LE

    Slide switch

    With LED indicator

     

    BNC female socket

     

    8-position knob

     

    M4 ×2

    SM1 × 1

    SM0.5 × 1

     


    Eight-level quantitatively adjustable gain parameters

     

    0dB

    10dB

    20dB

    30dB

    Gain (Hi-Z)

    1.51× 103V

    /A

    Gain (Hi-Z)

    4.75× 103V

    /A

    Gain (Hi-Z)

    1.5 × 104V/

    A

    Gain (Hi-Z)

    4.75× 104

    V/A

    Gain (50Ω)

    0.75× 103V

    /A

    Gain (50Ω)

    2.38× 103V

    /A

    Gain (50Ω)

    0.75× 104V

    /A

    Gain (50Ω)

    2.38× 104

    V/A

    Bandwidth (BW)

    13MHz

    Bandwidth (BW)

    1.7MHz

    Bandwidth (BW)

    1.1MHz

    Bandwidth (BW)

    300kHz

    Noise (RMS)

    ≤258uV

    Noise (RMS)

    ≤250uV

    Noise (RMS)

    ≤250uV

    Noise (RMS)

    ≤250uV

    40dB

    50dB

    60dB

    70dB

    Gain (Hi-Z)

    1.51× 105V

    /A

    Gain (Hi-Z)

    4.75× 105V

    /A

    Gain (Hi-Z)

    1.5 × 106V/

    A

    Gain (Hi-Z)

    4.75× 106

    V/A

    Gain(50Ω)

    0.75× 105V

    /A

    Gain(50Ω)

    2.38× 105V

    /A

    Gain(50Ω)

    0.75× 106V

    /A

    Gain(50Ω)

    2.38× 106

    V/A

    Bandwidth (BW)

    90kHz

    Bandwidth (BW)

    28kHz

    Bandwidth (BW)

    9kHz

    Bandwidth (BW)

    3kHz

    Noise (RMS)

    ≤250uV

    Noise (RMS)

    ≤250uV

    Noise (RMS)

    ≤300uV

    Noise (RMS)

    ≤400uV

    Signal offset

    ±8mV(Typ.) ， ± 12mV(Max)

     

     

    Response Curve

    图片9.png


    Product Configuration

    图片10.png

     

    Appendix 1: Optional Configuration Table

     

    Infrared Extended InGaAs Amplified Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength range Photosensitive size

    Reserve optional configuration

    PD:  "Photodetectors"

    J：InGaAs

    A：Amplified

    A：Adjustable gain

    8M10 ：800-2600nm ，1mm × 1mm






    8L10 ：800-2200nm ，1mm× 1mm






    8L20 ：800-2200nm ，2mm× 2mm


     

    Appendix 2: Model and Part Number Comparison Table

     

     

    PN#

    Stock#

    Specifications

    PDJAA8M10

    A80153457

    800-2600nm infrared extended InGaAs amplified photodetector, photosensitive size 1mm×1mm, 0～70dB eight-level quantitative adjustable gain, response time constant 25ns

    PDJAA8L10

    A80153458

    800-2200nm infrared extended InGaAs amplified photodetector, photosensitive size 1mm×1mm, 0～70dB eight-level quantitative adjustable gain, response time constant 35ns

    PDJAA8L20

    A80153459

    800-2200nm infrared extended InGaAs amplified photodetector, photosensitive size 2mm×2mm, 0～70dB eight-level quantitative adjustable gain, response time constant 200ns


    可选配置表
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