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首页 Semiconductor Diodes DFB Laser Diode 1260-1360nm DFB laser diode 1320nm high temperature and high power DFB laser chip 1320nm High-Temperature High-Power DFB Chip 250mW

    • 1320nm High-Temperature High-Power DFB Chip 250mW

    The 1320nm high-temperature high-power DFB laser chip is suitable for operation in high-temperature environments, offering advantages such as ultra-low RIN noise and high output optical power. The output power can reach up to 250mW. Wavelength customization services are available based on customer requirements.

    产品特点High power and high temperature design、 No mode hopping over a wide temperature and current range、 Low beam divergence angle、 Low RIN (Relative Intensity Noise)、 High feedback tolerance

    产品货号I80010005

    应用领域Optical Transceiver、 Data Center

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    电话：18602170419

    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Parameters

    Recommended Operating Conditions

    Parameter

    Min Value

    Typ. Value

    Max Value

    Unit

    Chip Temperature

    65

    85

    105

    °C

    Forward Current


    800

    900

    mA

    Output Power

    20


    250

    mW

     

    Basic Parameters Tested for Each Sample @ CW, 85°C, 800mA

    Parameter

    Min Value

    Typ. Value

    Max Value

    Unit

    Output Power @ 900mA

    250



    mW

    Forward Voltage


    1.5

    3

    V

    Threshold Current


    100

    130

    mA

    Power Conversion Efficiency


    18


    %

    Peak Wavelength*

    1315

    1320

    1325

    nm

    Wavelength Temperature Tuning Coefficient


    90


    pm/°C

    Wavelength Current Tuning Coefficient


    2.9


    pm/mA

    Side Mode Suppression Ratio (SMSR)

    40

    45


    dB

    Slow Axis Beam Divergence Angle (FWHM)

    7

    8

    9

    deg

    Fast Axis Beam Divergence Angle (FWHM)

    33

    35

    37

    deg

    Polarization Extinction Ratio (PER)

    15

    20


    dB

    Polarization


    TE



    * Wavelengths in the range of 1270-1330nm can be provided upon request.

    Noise Characteristics (Conditions @ CW, 85°C, 800mA)

    Parameter

    Min Value

    Typ. Value

    Max Value

    Unit

    Linewidth (Self-Heterodyne @ 80MHz)


    1

    5

    MHz

    Relative Intensity Noise (RIN)



    -140

    dB/Hz

    Feedback Sensitivity (optical)



    -30

    dB

    * Average value, measurement range from DC-10GHz

    ** Single-line spectrum and RIN <-140 dB/Hz

    Chip Parameters

    Parameter

    Min Value

    Typ. Value

    Max Value

    Unit

    Chip Length


    3


    mm

    Front-End Back Reflection


    0.01

    0.1

    %

    Back-End Back Reflection

    90

    99


    %

     


    Spectrum

    4.1.png 

     


    Optoelectronic Current-Voltage-Power Characteristics

    4.2.png

      


    Power Conversion Efficiency

    4.3.png 

     


    Spectral (resolution 10 pm)

    4.4.png 

     


    Peak Wavelength Chart

    4.5.png 

     

     

    Wavelength-Current Tuning Curve

    4.6.png

     

     

    Wavelength-Temperature Tuning Curve

    4.7.png 

     


    Absolute Maximum Ratings

    Parameters

    Min

    Max

    Unit

    Forward Current


    950

    mA

    Reverse Voltage


    1

    V

    Operating Temperature

    5

    125

    °C

    Soldering Temperature (max 5 sec)


    250

    °C

    Storage Temperature (in original sealed package)

    -40

    85

    °C

     

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