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首页 PhotoDetectors Amplified detectors InGaAs Amplified Photodetector 800-1700nm indium gallium arsenide amplifying photodetector - adjustable gain 800-1700nm InGaAs amplified photodetector, active area Φ10.0mm

    • 800-1700nm InGaAs amplified photodetector, active area Φ10.0mm

    The InGaAs amplified photodetector from IdealPhotonics covers a detection range from 800nm to 1700nm. It features 8 levels of adjustable gain, enabling quantitative photoelectric conversion with a wide dynamic range. It is suitable for various photoelectric development scenarios, offering excellent performance and cost-effectiveness, with comprehensive technical support. It is commonly used in near-infrared light measurement.

    产品特点Detection Range: 800nm–1700nm, commonly used in near-infrared light measurement、 Bias-type Detector, Extremely low noise, fast response, no gain、 Low Cost: Suitable for high-speed laser pulse or light-emitting event intensity-time waveform measurement、 Excellent Performance: High cost-performance ratio with comprehensive technical support、 Non-standard customization services available

    产品货号E80043184

    应用领域Near-infrared light measurement

    产品单价联系客服询价

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    电话：16628709332

    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Main Parameters

     

    Parameter

    Value

    Wavelength Range

    800-1700nm

    Active area

    Φ1.0mm

    Φ2.0mm

    Φ3.0mm

    Φ5.0mm

    Φ8.0mm

    Φ10.0mm

    Response Time Constant

    10ns

    25ns

    120ns

    300ns

    650ns

    1200ns

    Bandwidth Range

    DC ～13MHz

    DC ～11MHz

    DC～4MHz

    DC ～1MHz

    DC ～100KHz

    DC ～10KH z

    Gain Range

    Hi-Z load: 1.51kV/A～4.75MV/A; 50Ω load: 0.75kV/A～2.38MV/A

    Signal Amplitude

    Hi-Z load: 0～10V; 50Ω load: 0～5V

    Gain Adjustment Method

    Rotary switch: 0～70dB, with 8 steps (10dB per step). Bandwidth is inversely proportional to gain.

    Light Sensitive Surface Depth

    0.13"     (3.3  mm)

    Detector Net Weight

    0.10kg

    Operating Temperature

    10-40℃

    Storage Temperature

    -20-70℃

    External Dimensions

    2.79" X 2.07" X 0.89"  (70.9  mm X  52.5  mm X  22.5  mm)


    6.1 × 10 -11 ~2.2 8 × 10-12

    4.6 × 10 -11 ~2. 24× 10-12

    3.8 × 10 -11 ~2. 17× 10-12

    2.2 × 10-11 ~2. 01× 10-12

    1.5 × 10-11 ~1. 57× 10-12


    NEP

    pW/Hz1/2

    pW/Hz1/2

    pW/Hz1/2

    pW/Hz1/2

    pW/Hz1/2

    --

    Power Supply Interface

    Power Supply Switch

    Signal Interface

    Gain Adjustment

    Support Interface

    Optical Interface

    LUMBERG  RSMV  
    3  FEMALE

    Sliding switch with LED indicator

    BNC female socket

    8-step rotary knob

    M4×2

    SM1 × 1

    SM0.5 × 1

     

     

     

    Eight-Step Quantitative Adjustable Gain Parameters：

     

    0dB

    10dB

    20dB

    30dB

    Gain (Hi-Z)

    1.51×103V /A

    Gain (Hi-Z)

    4.75× 103V /A

    Gain (Hi-Z)

    1.5 ×104V/ A

    Gain (Hi-Z)

    4.75×104 V/A

    Gain (50Ω）

    0.75×103V /A

    Gain (50Ω)

    2.38×103V /A

    Gain (50Ω)

    0.75×104V /A

    Gain (50Ω)

    2.38×104 V/A

    Bandwidth (BW)

    12MHz

    Bandwidth(BW)

    1.6MHz

    Bandwidth (BW)

    1MHz

    Bandwidth (BW)

    260kHz

    Noise (RMS)

    258uV

    Noise (RMS)

    192uV

    Noise (RMS)

    207uV

    Noise (RMS)

    211uV

    40dB

    50dB

    60dB

    70dB

    Gain (Hi-Z)

    1.51×105V /A

    Gain (Hi-Z)

    4.75×105V /A

    Gain (Hi-Z)

    1.5 ×106V/ A

    Gain (Hi-Z)

    4.75×106 V/A

    Gain (50Ω)

    0.75×105V /A

    Gain (50Ω)

    2.38×105V /A

    Gain (50Ω)

    0.75×106V /A

    Gain (50Ω)

    2.38×106 V/A

    Bandwidth (BW)

    90MHz

    Bandwidth (BW)

    28MHz

    Bandwidth (BW)

    9kHz

    Bandwidth (BW)

    3kHz

    Noise (RMS)

    214uV

    Noise (RMS)

    234uV

    Noise (RMS)

    277uV

    Noise (RMS)

    388uV

    Signal Offset

    ±8mV(Typ.) ， ±12mV(Max)








    Response Curve

    图片5.png



    Product Configuration

    图片6.png



    Attachment 1: Optional Configuration TableAttachment 1: Optional Configuration Table

    InGaAs Amplified Photodetector

    Optional Configuration

    Product Name

    Material

    Type

    Features

    Wavelength Range

    Active area

    Reserved Optional Configuration

    PD: "Photodetector"

    J: InGaAs (Indium Gallium Arsenide)

    A: Amplifying

    A: Adjustable Gain

    8J10：800-1700nm ，Φ1.0mm






    8J20：800-1700nm ，Φ2.0mm






    8J30：800-1700nm ，Φ3.0mm






    8J50：800-1700nm ，Φ5.0mm






    8J80：800-1700nm ，Φ8.0mm






    8J100：800-1700nm，Φ10.0m m


     


    Attachment 2: Model and Part Number Cross-reference Table

    Model

    Part Number

    Specs

    PDJAA8J10

    A80153446

    800-1700nm InGaAs Amplified Photodetector, Active area Φ1.0mm, 0～70dB 8-level Adjustable Gain, Bandwidth Range DC ～13MHz

    PDJAA8J20

    A80153447

    800-1700nm InGaAs Amplified Photodetector, Active areaa Φ2.0mm, 0～70dB 8-level Adjustable Gain, Bandwidth Range DC ～11MHz

    PDJAA8J30

    A80153448

    800-1700nm InGaAs Amplified Photodetector, Active area Φ3.0mm, 0～70dB 8-level Adjustable Gain, Bandwidth Range DC～4MHz

    PDJAA8J50

    A80153449

    800-1700nm InGaAs Amplified Photodetector, Active area Φ5.0mm, 0～70dB 8-level Adjustable Gain, Bandwidth Range DC ～1MHz

    PDJAA8J80

    A80153450

    800-1700nm InGaAs Amplified Photodetector, Active area Φ8.0mm, 0～70dB 8-level Adjustable Gain, Bandwidth Range DC ～100kHz

    PDJAA8J100

    A80153451

    800-1700nm InGaAs Amplified Photodetector, Active area Φ10.0mm, 0～70dB 8-level Adjustable Gain, Bandwidth Range DC ～10kHz

     

    可选配置表
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