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首页 PhotoDetectors Amplified detectors InGaAs Amplified Photodetector Indium gallium arsenide InGaAs high-speed amplifying photodetector PDA series 800-1700nm InGaAs Large Area Photodetector, 800-1700nm (2MHz)

    • InGaAs Large Area Photodetector, 800-1700nm (2MHz)

    The InGaAs photodetector is a photodetector with a rated bandwidth and fixed gain, designed for detecting optical signals. The optical signal is input through the sensor surface, and the output is provided as a voltage via BNC. This product can measure optical signals in the wavelength range of 800nm to 1700nm. Detailed performance parameters are provided in the appendix table. Our photodetector housing includes mounting holes with a 1/4"-20 threaded pattern for easy installation and fixation. The housing also comes with two different sizes of threaded rings, suitable for both industrial and research applications, enabling easy adaptation to external optical components such as filters, attenuators, lenses, and FC fiber optic adapters. This product includes a plastic dust cover. For specific installation instructions, please refer to Chapter 3. Each photodetector is provided with a ±9V DC linear power supply, with an input rated voltage of 220VAC/50HZ

    产品特点Low noise, less than ±1mV 、 Small overshoot, overshoot voltage less than 2.5% 、 Gain stability: Gain error less than 1% 、 Dark bias voltage output noise: Less than 1mV (rms)

    产品货号E80040186

    应用领域Display panel testing 、 LED lighting flicker analysis 、 Toy light flicker frequency and power measurement 、 Gas analysis

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    主要参数
  • 核心参数

  • 尺寸图

    • parameter

    PN#

    PDA M 005B-Si

    PDA M 36A5B6G-SI

    PDA M 20A6B4G- InGaAs

    Electrical characteristics


    Input voltage

    ±9VDC, 60mA

    ±9VDG 100mA

    ±9VDC. 100mA

    Probe

    Silicon PIN

    Silicon PIN

    InGaAs PIN

    Photosensitive surface

    2.65mm * 2.65mm

    3.6mm * 3.6mm

    Diameters@2 mm

    wavelength

    400 nm - 1100 nm

    320 nm - 1100 nm

    800 nm - 1700 nm (Optional Extended 2600 nm)

    Peak response

    0.62A/W @850nm

    0.6 A/W @960nm

    0.9 A/W@1550nm

    43.6mV/ uW @850nm

    1 mV/ nW @960nm

    9mV/uW@1550nm

    Saturation optical power

    113pW@ 850nm (Hi-Z)

    6uW @960nm (Hi-Z)

    660 uW@1550nm (Hi-Z)

    Bandwidth

    DC •-5MHz

    DC - 200kHz

    DC - 5MHz

    NEP

    7.2 pW /4HZ 1/2

    2.2 pW /HZ 1/2

    64.5 pW /HZ 1/2

    Output noise (RMS)

    700 uV

    1 mV・typ

    1.3 mV. typ

    Dark current bias (MAX)

    ±5 mV

    ±1 mV

    ±5 mV

    Rising edge/falling edge (10%-90%)

    65 ns

    1.7 us

    68ns

    Output voltage


    Hi-Z

    0-SV (Hi-Z)

    0-6V (Hi-Z)

    0-6V (Hi-Z)

    500

    0 • 2.5V (50ohm)

    0 • 25V (50ohm)

    0 • 25V (50ohm)

    Gain multiple


    Hi-Z

    67.5 kV/A

    1.68 MV/A

    10 kV/A

    50Q

    33.8 kV/A

    0.84 MV/A

    5kV/A

    Gain accuracy ( typ )

    ±1%

    ±1%

    ±1%

    Other parameters



    Toggle switch

    Toggle switch

    Toggle switch

    Output Interface

    BNC

    BNC

    BNC

    size

    53*50*50mm

    53*50*50mm

    53*50*50mm

    weight

    150g

    150g

    150g

    Operating temperature

    10-50 degrees

    10-50 degrees

    10-50 degrees

    Storage temperature

    -25℃ - 70℃

    -25℃ - 70℃

    -25℃ - 70℃

     

    Reference for the amplified, ＆fixed gain model of InGaAs photodetector

    model

    wavelength

    bandwidth

    Rise time

    Gain

    RMS Noise

    NEP

    Sensing surface

    Operating temperature

    power supply

    Hi-Z Load

    50Ω Load

    PDA10A8B4G-NIR

    800 - 1700 nm

    DC - 140MHz

    2.5 nS

    1*10 4 V/A

    5*10 3 V/A

    760 µV . typ

    4.8*10 -12 W/√HZ

    ф1 mm

    10-50℃

    Included (±9V)

    PDA05A7B4G-NIR

    800 - 1700 nm

    DC - 25MHz

    14 nS

    1.2*10 4 V/A

    6*10 3 V/A

    1 mV . typ

    1.9*10 -11 W/√HZ

    ф0.5 mm

    10-50℃

    Included (±9V)

    PDA10A7B4G-NIR

    800 - 1700 nm

    DC - 12MHz

    29 nS

    1*10 4 V/A

    5*10 3 V/A

    800 µV . typ

    2.6*10 -11 W/√HZ

    ф1 mm

    10-50℃

    Included (±9V)

    PDA20A6B4G-NIR

    800 - 1700 nm

    DC - 5MHz

    70 nS

    1*10 4 V/A

    5*10 3 V/A

    1.3 mV . typ

    6.5*10 -11 W/√HZ

    ф2 mm

    10-50℃

    Included (±9V)

    PDA30A6B4G-NIR

    800 - 1700 nm

    DC - 2MHz

    175 nS

    1*10 4 V/A

    5*10 3 V/A

    800 µV . typ

    6.3*10 -11 W/√HZ

    ф3 mm

    10-50℃

    Included (±9V)

     

    Appearance and installation

    4.jpg

     

    Test cases :

    Test light source:

    PN: PL-DFB-9672.4-B-A81-PA

    SN:DO3431e-q2-Bo2-A19

    Test conditions: 25℃, laser current scan 15-23mA, detector output as shown below.

     图片3.png

    This detector has high detection accuracy at 972nm and can detect weak light (tens of microwatts).

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