Incident wavelength

λ_R

1549

1550.12

1551

nm

T = 20°C, I_TEC = 0, P_OP= 20mw

Threshold current

I_TH

10

35

mA

T = 20°C

Output power

P_opt

20

30

40

mW

T = 0 … 50°C

Threshold voltage

U_TH

1.80

V

Laser current

I_OP

200

mA

P_opt = 20mw

Laser voltage

U_OP

2.0

V

P_opt = 20mw

Electro-optical conversion ratio

η_WP

12

%

P_opt = 20mw

Slope efficiency

η_S

0.74

W/A

T = 20°C

3dB modulation bandwidth

ν3dB

0.10

GHz

P_opt  =20mw(For ESD protection diodes)

Relative noise intensity

RIN

-130

-120

dB/Hz

P_opt = 0.3 mW @ 1 GHz

Wavelength tuning current

0.01

nm/mA

Wavelength tuning temperature

0.1

nm/deg

Thermistor

R_thermal

3

5

K/mW

Side mode suppression

30

dB

Beam divergence

θ

10

25

°

P_opt = 20mwFull 1/e² bandwidth

Spectral bandwidth

Δν

3

MHz

P_opt = 20mw

TEC current

I_TEC

1000

mA

Proper heat sink required

NTC Thermistors

9.5

10.0

10.5

kΩ

T= 25℃

NTC temperature dependence

10/exp[3892·(1/298K-1/T_OP)]

kΩ

Operating temperature

-20 … 80°C

Electric power loss

500mW

Forward laser current

2000mA

Backward current

10mA

Soldering temperature*

270C°

(*TEC temperature must be below 70°C)

2

Thermistor

9

NC

3

NC

10

NC

4

PD Monitor Anode   (-)

11

Laser Anode (+),Case Ground

5

PD Monitor Cathode   (+)

12

RF Laser Input Cathode (–)

6

Thermoelectric Cooler (+)

13

Laser Anode (+),Case Ground

7

Thermoelectric Cooler (–)

14

NC