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首页 PhotoDetectors Position sensing detector Four Quadrant Position Sensing Detector Silicon Si four quadrant detector with large photosensitive surface 400-1100nm (photosensitive surface diameter 10/16mm) 400-1100nm Four-quadrant Si photodetector (N-type silicon quadrant detector, photosensitive surface diameter 10mm, DC responsivity 0.3A/W)

    • 400-1100nm Four-quadrant Si photodetector (N-type silicon quadrant detector, photosensitive surface diameter 10mm, DC responsivity 0.3A/W)

    The device is an N-type silicon quadrant detector. When the radiation flux of light radiating to each quadrant of the device is equal, the photocurrent output of each quadrant is equal. When the target is offset, the change of radiation flux between quadrants causes the change of output photocurrent of each quadrant, thereby measuring the direction of the object, thus playing the role of tracking and guiding.

    产品特点Low dark current、 High uniformity and symmetry、 High reliability、 Small blind spot

    产品货号E80040002

    应用领域Laser aiming, guidance, tracking and exploration device、 Precision measurement system such as laser micro-positioning and displacement monitoring

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    Sherry

    电话：16628709332

    邮箱：moli@microphotons.com

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  • 核心参数

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    • Parameter

    Parameter

    Symbol

    Test condition

    Value

    Unit

    (Unless otherwise specified, TA = 22°C ± 3°C)

    Min.

    Typical

    Max.

    Responsivity (AC) (quadrant)

    Spi

    λ=1.064μm

    Pulse width 20 ns、Pin=2 mW

    0.25

    -

    -

    A/W

    Responsivity (DC) (quadrant)

    Rei


    DC、Pin=1μw

    0.3

    -

    -

    Responsivity (AC) (quadrant)a

    ΔRei

    VR=135 V

    TA=-45 ℃±2 ℃

    -

    -

    50

    %

    Responsivity (DC) (quadrant)a


    Dark current (quadrant)

    IDi

    VR=135V

    TA=22℃±3℃

    -

    -

    1

    μA


    TA=70℃±3℃

    -

    -

    10

    Dark current (ring)

    ID

    Pin=0μw

    TA=22℃±3℃

    -

    -

    10


    TA=70℃±3℃

    -

    -

    100

    Junction capacitance (quadrant)

    Cji

    VR=135V，f=1MHz

    -

    -

    15

    pF

    Active area

    φ


    10

    -

    16

    mm

    Equivalent noise power

    NEPi

    λ=1.064 μm，VR=135 V ,pulse width 20 ns

    -

    -

    5×10-12

    W/HZ1/2

    Breakdown voltage (quadrant, ring)

    V BR

    IR=10μA

    200

    -

    -

    V

    Inter-pixel sensitivity non-uniformity

    Rf

    λ=1.064 μm，VR=135 V, pulse width 20 ns；Pin=2mW

    -

    -

    5

    %

    Intra-pixel sensitivity non-uniformity

    Rf n

    λ=1.064 μm，VR=135 V, pulse width 20 ns；Pin=2mW

    -

    -

    5

    %

    Inter-pixel crosstalk factor

    SLi

    λ=1.064 μm，VR=135 V, pulse width 20 ns；Pin=2mW

    -

    -

    5

    %

    element gap

    -

    -

    -

    0.2

    -

    mm

     


    Spectrum responsivity curve

    1.2.jpg

     


    Appearance and structure

    TO type airtight package. The appearance and structure are shown in Figure 1, and the dimensions are shown in Table 1.


     

    Table 1 appearance dimension (unit mm)

    Dimension symbol

    φ D1

    Φ D2

    Φ D3

    Φ D4

    Φ D5

    Φ d

    A

    L1

    L2

    L3

    e

    Min.

    30. 55

    27. 80

    3. 00

    27. 915

    22. 60

    0. 98

    7. 03

    3. 02

    1. 85

    2. 70

    18. 00

    Max.

    30. 65

    28. 00

    3. 06

    27. 94

    23. 40

    1. 02

    7. 20

    3. 10

    1. 95

    3. 00

    18. 05

     


    Pin arrangement

    The pin arrangement of the device is shown in Figure 2. The pin functions should comply with the requirements of Table 2.

    1.5.png

     

     

    Table 2 Pin Function Table

    Pin

    Function

    Voltage polarity

    1

    Quadrant 1

    Positive

    2

    Public P level

    Negative

    3

    Quadrant 4

    Positive

    4

    Ring level

    Positive

    5

    Quadrant 3

    Positive

    6

    Case

    Ground

    7

    Quadrant 2

    Positive

     

     


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