400-1100nm Four-quadrant Si photodetector (N-type silicon quadrant detector, photosensitive surface diameter 10mm, DC responsivity 0.3A/W)

400-1100nm Four-quadrant Si photodetector (N-type silicon quadrant detector, photosensitive surface diameter 10mm, DC responsivity 0.3A/W)

The device is an N-type silicon quadrant detector. When the radiation flux of light radiating to each quadrant of the device is equal, the photocurrent output of each quadrant is equal. When the target is offset, the change of radiation flux between quadrants causes the change of output photocurrent of each quadrant, thereby measuring the direction of the object, thus playing the role of tracking and guiding.

Product features：Low dark current、 High uniformity and symmetry、 High reliability、 Small blind spot

Part Number：--

Application area：Laser aiming, guidance, tracking and exploration device、 Precision measurement system such as laser micro-positioning and displacement monitoring

Add to Cart Consult Favorite

Related Products

400-1100nm Four-quadrant Si photodetector (N-type silicon quadrant detector, photosensitive surface diameter 16mm, DC responsivity 0.3A/W)

Main parameters
General Parameters
Optional Configurations
Downloads

Main parameters

Core parameters

Dimension Drawing

General Parameters

Parameter

Parameter	Symbol	Test condition		Value			Unit
Parameter	Symbol	(Unless otherwise specified, T_A = 22°C ± 3°C)		Min.	Typical	Max.	Unit
Responsivity (AC) (quadrant)	S_pi	λ=1.064μm	Pulse width 20 ns、P_in=2 mW	0.25	-	-	A/W
Responsivity (DC) (quadrant)	R_ei		DC、P_in=1μw	0.3	-	-	A/W
Responsivity (AC) (quadrant)a	ΔR_ei	V_R=135 V	T_A=-45 ℃±2 ℃	-	-	50	%
Responsivity (DC) (quadrant)a	ΔR_ei		T_A=-45 ℃±2 ℃	-	-	50	%
Dark current (quadrant)	I_Di	V_R=135V	TA=22℃±3℃	-	-	1	μA
Dark current (quadrant)	I_Di		T_A=70℃±3℃	-	-	10
Dark current (ring)	I_D	P_in=0μw	T_A=22℃±3℃	-	-	10
Dark current (ring)	I_D		T_A=70℃±3℃	-	-	100
Junction capacitance (quadrant)	C_ji	V_R=135V，f=1MHz		-	-	15	pF
Active area	φ			10	-	16	mm
Equivalent noise power	NEP_i	λ=1.064 μm，V_R=135 V ,pulse width 20 ns		-	-	5×10^-12	W/HZ^1/2
Breakdown voltage (quadrant, ring)	V _BR	I_R=10μA		200	-	-	V
Inter-pixel sensitivity non-uniformity	R_f	λ=1.064 μm，V_R=135 V, pulse width 20 ns；P_in=2mW		-	-	5	%
Intra-pixel sensitivity non-uniformity	R_{f n}	λ=1.064 μm，V_R=135 V, pulse width 20 ns；P_in=2mW		-	-	5	%
Inter-pixel crosstalk factor	S_Li	λ=1.064 μm，V_R=135 V, pulse width 20 ns；P_in=2mW		-	-	5	%
element gap	-	-		-	0.2	-	mm

Spectrum responsivity curve

Appearance and structure

TO type airtight package. The appearance and structure are shown in Figure 1, and the dimensions are shown in Table 1.

Table 1 appearance dimension (unit mm)

Dimension symbol	φ D₁	Φ D₂	Φ D₃	Φ D₄	Φ D₅	Φ d	A	L1	L2	L3	e
Min.	30. 55	27. 80	3. 00	27. 915	22. 60	0. 98	7. 03	3. 02	1. 85	2. 70	18. 00
Max.	30. 65	28. 00	3. 06	27. 94	23. 40	1. 02	7. 20	3. 10	1. 95	3. 00	18. 05

Pin arrangement

The pin arrangement of the device is shown in Figure 2. The pin functions should comply with the requirements of Table 2.

1.5.png

Table 2 Pin Function Table

Pin	Function	Voltage polarity
1	Quadrant 1	Positive
2	Public P level	Negative
3	Quadrant 4	Positive
4	Ring level	Positive
5	Quadrant 3	Positive
6	Case	Ground
7	Quadrant 2	Positive

Optional Configurations

Downloads

No resources available