High Power Narrow Linewidth ECL External Cavity Semiconductor Laser Module 1550nm 10mW 5KHz

High Power Narrow Linewidth ECL External Cavity Semiconductor Laser Module 1550nm 10mW 5KHz

The laser uses a self-designed and produced external cavity chip, and achieves stable output with narrow line width, high power and low noise through hybrid integration, which is suitable for the field of highly integrated coherent detection. It has low phase noise, low frequency noise, and the integrated line width can reach below 3kHz; it has a small design size, stable performance and excellent vibration characteristics.

Product features：Wavelength stability: ±10pm、 Power stability 0.01dB、 Power consumption 5W、 Dimensions: 96x27x68mm、 Working temperature: -20~75°C

Part Number：--

Application area：Silicon photonic integrated chip technology、 ECL External Cavity Lasers、 Tunable Photonics Technology、 Ultra-narrow line width

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Main parameters
General Parameters
Optional Configurations
Downloads

Main parameters

Core parameters

Dimension Drawing

General Parameters

General parameters

Output light characteristics	Parameter	Unit
Output optical power	≥ 10, 20	mW
Integrated line width	≤3, 5（note 1)	kHz
Intrinsic linewidth	<100	Hz
Working wavelength	1550±5 or ITU-T Grid ±0.2	nm
Frequency stability	Typical ＜10^-8(2MHz)	@100s
Relative intensity noise	≤- 150	dBc /Hz
Operating temperature	-10～60	℃
Optical Isolation	≥40	dB
Electrical Characteristics	Parameter	Unit
Supply voltage	5- 6	V
Normal operating current	500 (note2)	mA
Module starting current	1500 (note3)	mA

Note 1: Tested using the phase noise method, similar to the Lorentz linewidth for a simple test using the delayed self-heterodyne beat method.

Note 2: Typical values are related to external operating temperature.

Note 3: The current value of the module when the TEC is in high current working state during startup. In order to ensure normal startup, the power supply usually needs to provide a current of 2A.

spectrum

Frequency Noise

Line width measurement

Model Description

SCL0-ECL-□□□□-☆-A8▽-L□□-M□- XX

□□□□: Wavelength

1530.33: 1530.33nm

1550.12: 1550.12nm

*****

1565.5: 1565.5nm

☆: Output Power

A:10mW

B:20mW

C:30mW

D:40mW

E:50mW

▽: Wavelength Tolerance

1: ±1nm

2: ±2nm

3: ±10nm

L□□: Linewidth

01: Grade 1 ＜1KHZ

02: Grade 2 ＜3KHZ

03: Grade 3 ＜5KHZ

04: Grade 4 ＜10KHZ

05: Grade 5 ＜20KHZ

M□: Modulation

0: CW

1: External Modulation

XX: Fiber and Connector Type

SA=SMF-28E+ FC/APC

SP=SMF-28E+ FC/PC

PP=PM Fiber+ FC/PC

PA=PM Fiber+ FC/APC

DWDM ITU wavelength 1

ITU channel number	ITU Frequency THz	Wavelength nm	ITU channel number	ITU Frequency THz	Wavelength nm	ITU channel number	ITU Frequency THz	Wavelength nm
15	191.50	1565.50	30	193.00	1553.33	45	194.50	1541.35
16	191.60	1564.68	31	193 10	1552.52	46	194.60	1540.56
17	191.70	1563.86	32	193 20	1551.72	47	194.70	1539.77
18	191.80	1563.05	33	193.30	1550.92	48	194.80	1538.98
19	191.90	1562.23	34	193.40	1550.12	49	194.90	1538.19
20	192.00	1561.42	35	193.50	1549.32	50	195.00	1537.40
21	192.10	1560.61	36	193.60	1548.51	51	195.10	1536.61
22	192.20	1559.79	37	193.70	1547.72	52	195.20	1535.82
23	192.30	1558.98	38	193.80	1546.92	53	195.30	1535.04
24	192.40	1558.17	39	193.90	1546.12	54	195.40	1534.25
25	192.50	1557.36	40	194.00	1545.32	55	195.50	1533.47
26	192.60	1556.55	41	194.10	1544.53	56	195.60	1532.68
27	192.70	1555.75	42	194 20	1543.73	57	195.70	1531.90
28	192.80	1554.94	43	194.30	1542.94	58	195.80	1531.12
29	192.90	1554.13	44	194.40	1542.14	59	195.90	1530.33

Optional Configurations

Downloads

High Power Narrow Linewidth ECL External Cavity Semiconductor Laser Module 1550nm 10mW 5KHz.pdf