Ge Germanium Ultra-large photosensitive PIN photodiode (800-1800nm diameter 10mm)

Idealphotonics' stocks PIN junction diodes (PDs) with various active areas and packages, including indium gallium arsenide (InGaAs), gallium phosphide (GaP), silicon (Si) and germanium (Ge) photodiodes. We have high-speed silicon photodiodes. There are also high responsivities in the range of 900 to 2600 nm, and the detection wavelength exceeds the 1800 nm of typical indium gallium arsenide photodiodes. Dual-band photodiodes, which integrate two photodetectors close together (silicon substrate on top, indium gallium arsenide substrate on the bottom), have a combined wavelength range from 400 to 1700 nm. In order to enrich our photodiode product line, we provide mounted photodiodes for customers to power and use. The non-uniformity of the edge of the detector's active area may cause unwanted capacitance and resistance effects, thereby distorting the time domain response of the photodiode. Therefore, we recommend that the light be incident on the center of the active area. To this end, a focusing lens or pinhole can be placed in front of the detector.