• Ge Germanium Large photosensitive PIN photodiode (800-1800nm diameter 5mm)

    Idealphotonics' stocks PIN junction diodes (PDs) with various active areas and packages, including indium gallium arsenide (InGaAs), gallium phosphide (GaP), silicon (Si), and germanium (Ge) photodiodes. We have high-speed silicon photodiodes. There are also high responsivities in the range of 900 to 2600 nm, with detection wavelengths exceeding the 1800 nm of typical indium gallium arsenide photodiodes. Dual-band photodiodes, which integrate two photodetectors close together (silicon substrate on top, indium gallium arsenide substrate on the bottom), with a combined wavelength range from 400 to 1700 nm. In order to enrich our photodiode product line, we provide mounted photodiodes for customers to power and use. The non-uniformity of the edge of the detector's active area may cause unwanted capacitance and resistance effects, thereby distorting the time domain response of the photodiode. Therefore, we recommend that the light be incident on the center of the active area. To this end, a focusing lens or pinhole can be placed in front of the detector.

    产品特点Small and large photosensor areas available (100µm to 25mm)、 800nm to 1800nm spectral response、 High linearity > 10 dBm、 Customizable lens combinations (Biconvex, Planoconvex, or Ball)、 Available packaging options (TO-46, TO-18, TO-5, TO-8, TO-9 or BNC)

    产品货号E80040033

    应用领域Laser power meter、 LED/ LD aging diagnostics、 Spectroscopy、 LED/ LD characteristics、 Eye-safe laser detection sensor

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    Sherry

    电话:16628709332

    邮箱:moli@microphotons.com

    主要参数
  • 核心参数
  • 尺寸图
  • Parameter

    Parameter

    Detection material

    Ge

    Response wavelength

    800 - 1800 nm

    Peak wavelength

    1550 nm (Typ.)

    Responsivity

    0. 85 A/ W (Typ.)

    Photosensitive surface diameter

    19. 6 mm2 (Ø5 mm)

    Rise/fall time (RL = 50 Ohms, 10 V)

    220 ns / 220 ns (Typ.)

    NEP, Typical (1550 nm)

    4. 0 x 10-12W/ Hz1/ 2 (Typ.)

    Dark current (5 V)

    60 µA (Max. )

    Capacitance (10 V) Capacitance (0 V)

    1800 pF (Max. )

    16000 pF (Max. )

    Shunt resistance

    4000 Ohm (Typ.)

    Package type

    TO-8

    Maximum breakdown voltage

    10 V

    Operating temperature

    -55 to 60 ° C

    Storage temperature

    -55 to 60 ° C

    Notes 1. Typical values; RL = 50 Ω, unless otherwise specified

    2. NEP specifies in photovoltaic mode

     

    Spectral response curve

     





    Recommended Circuit

     


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