Germanium photodiodes are often used to measure optical power in the near-infrared range, especially in cost-sensitive applications or where large area detectors are required. However, compared to similarly sized InGaAs detectors, Germanium detectors have lower shunt resistance and higher dark current, resulting in higher overall noise levels. Therefore, Germanium detectors are well suited for applications where the detection signal is much higher than the noise floor. Idealphotonics Photonics offers the "HS" series of Germanium photodiodes with higher than typical shunt resistances for improved performance.
产品特点Chip diameters from 1 mm to 25 mm、 Spectral response from 800 nm to 1700 nm、 Multiple window and lens options、 Available optical filters (neutral density, bandpass, etc.)、 Thermoelectric cooling options、 Multiple package types: TO package, BNC options, chip on ceramic base, etc.
产品货号E80043242
应用领域Optical power measurement、 Spectroscopy、 Optical testing、 Medical diagnostics、 Fiber optic receivers
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电话:16628709332
邮箱:moli@microphotons.com
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Parameter
10X10mm Germanium Photodiode Performance Specifications | ||||
PN# | GB10M-XX | GE-10X10-BNC | GV10M-XX | |
Photoelectric properties@ 23 ºC ± 2 ºC | Unit | |||
RSHUNT @ 10mV (minimum/typical) | 2/3.5 | kΩ | ||
IDARK (Max) | 50 | μA | ||
capacitance | 90000 | pF | ||
VREVERSE | 0.5 | V | ||
Noise equivalent power (typical) | 6 | pW/Hz1/ 2 | ||
Maximum reverse voltage | 1 | V |
Germanium Photodiode | ||
Photoelectric properties @ 23 ºC ± 2 ºC | ||
Spectral response range | 800-1700 | nm |
Responsivity @ 850 nm (typical) | 0.30 | A/W |
Responsivity @ 1300 nm (typical) | 0.75 | A/W |
Responsivity @ 1550 nm (typical) | 0.85 | A/W |
Linearity | 10 | dBm |
Storage temperature | -40 to 125 | ºC |
Operating temperature | -40 to 85 | ºC |
Maximum Ratings @ 23 °C ± 2 °C | ||
Reverse current | 20 | mA |
Forward current | 10 | mA |
Wavelength response curves at different temperatures:
Capacitor Bias Voltage Curve:
Order Info:
PN#:GE-10X10-BNC
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