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首页 Semiconductor Diodes DFB Laser Diode 760-1000nm DFB laser diode Single mode narrow linewidth high-power DFB laser 760/795/852/1512/2004nm output power 20/40mW 760nm High Power Single Mode DFB Laser (20mW, TO39 Package, Oxygen Detection)

    • 760nm High Power Single Mode DFB Laser (20mW, TO39 Package, Oxygen Detection)

    With optimized optical characteristics, the 760nm single-mode DFB laser is an ideal choice for high-demand sensor system applications. The innovative chip design suppresses higher-order longitudinal and transverse modes, while maintaining stable linear polarization. The laser offers high output power, narrow linewidth, and excellent consistency, making it highly favored by domestic research customers. Currently, we have stock of the 760nm DFB laser for TDLAS oxygen detection, the 795nm VCSEL for Rubidium atomic clock experiments, and the 852nm VCSEL for Cesium atomic cooling.

    产品特点Ultra-high output power、 Narrow linewidth、 Internal TEC and thermistor、 2 nm adjustable TEC

    产品货号A80010200

    应用领域TDLAS oxygen analysis detection、 Optical coherence experiments

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    电话：18602170419

    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Technical Parameters

    Parameter

    Symbol

    Min.

    Typ.

    Max.

    Unit

    Remarks

    Incident Wavelength

    λR

    760

    760.5

    761

    nm

    T = 20°C, ITEC = 0, POP= 35mw

    Threshold Current

    ITH


    40


    mA

    T = 20°C

    Output Power

    Popt

    10

    20

    30

    mW

    T = 0 … 50°C

    Threshold Voltage

    UTH


    1.80


    V


    Laser Current

    IOP



    130

    mA

    Popt = 35mw

    Laser Voltage

    UOP


    2.0


    V

    Popt = 35mw

    Electro-optical Conversion Efficiency

    ηWP


    12


    %

    Popt = 20mw

    Slope Efficiency

    ηS


    0.74


    W/A

    T = 20°C

    3dB Modulation Bandwidth

    ν3dB


    3


    MHz

    Popt = 20 mW (due to ESD protection diode)

    Relative Intensity Noise

    RIN


    -130

    -120

    dB/Hz

    Popt = 0.3 mW @ 1 GHz

    Wavelength Tuning Current



    0.01


    nm/mA


    Wavelength Tuning Temperature



    0.1


    nm/deg


    Thermal Resistance

    Rthermal

    3


    5

    K/mW


    Side Mode Suppression


    30



    dB


    Beam Divergence

    θ

    10


    25

    °

    Popt = 35 mW full 1/e² bandwidth

    Spectral Bandwidth

    Δν


    3


    MHz

    Popt = 35mw

    TEC Current

    ITEC



    1000

    mA

    Requires proper heatsink

    NTC Thermistor Resistance


    9.5

    10.0

    10.5

    kΩ

    T= 25°C

    NTC Temperature Dependence


    10/exp[3892 · (1/298K-1/TOP)]

    kΩ


     950eb1e3f09ac636cd03ef2cac47233.png

     

     

    Absolute Maximum Values

    Storage Temperature

    -40 … 125°C

    Operating Temperature

    -20 … 80°C

    Electrical Power Loss

    500mW

    Forward Laser Current

    130mA

    Reverse Current

    10mA

    Soldering Temperature

    270C°

     *TEC Temperature must be below 70°C

     



    Spectral graph

    图片12.png

     


    L-I-V curve

    80537b5ae8203a9da092ab04416311f.png


    Temperature/Wavelength under TEC Current Tuning

     图片11.png


    Beam Quality Analysis

    图片10.png


     

    Oxygen Absorption Line

    图片9.png

     


    Pin Definition

    图片6.png

    图片7.png


    Ordering info

    PL-DFB-□□□□-☆-A8▽-TO5

    □□□□: Wavelength

    0760: 760nm

    1270: 1270nm

    1532: 1532nm

    1392: 1392nm

    1512: 1512nm

    1567: 1567nm

    1653.7: 1653.7nm

    ☆: Output Power

    A: 10mW

    B: 20mW

    ▽: Wavelength Tolerance

    1: ±1nm

    2: ±2nm

    可选配置表
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