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首页 Semiconductor Diodes DFB Laser Diode 760-1000nm DFB laser diode Single mode narrow linewidth high-power DFB laser 760/795/852/1512/2004nm output power 20/40mW 760nm high power single mode DFB laser 20mW (TO5 package oxygen detection)

    • 760nm high power single mode DFB laser 20mW (TO5 package oxygen detection)

    With optimized optical properties, the 760nm single-mode DFB is ideal for demanding sensing system applications. The innovative chip design has suppressed high-order longitudinal and transverse modes while providing linear polarization stability. The laser has high output power, narrow linewidth and good consistency and is currently favored by domestic scientific research customers. We currently have in stock wavelength 760nm DFB for TDLAS oxygen detection, 795nm VCSEL for Rb atomic clock experiments, and 852nm VCSEL for CS atomic cooling.

    产品特点Ultra-high output power、 Narrow linewidth、 Internal TEC and thermistor 、 2 nm TEC tunability

    产品货号A80010203

    应用领域TDLAS oxygen analysis detection、 Optical coherence experiment

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    电话：18602170419

    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Parameter

    Parameter

    Symbol

    Min.

    Typical

    Max.

    Unit

    Note

    Incident wavelength

    λR

    760

    760.5

    761

    nm

    T = 20°C, ITEC = 0, POP= 35mw

    Threshold current

    ITH


    40


    mA

    T = 20°C

    Output power

    Popt

    10

    20

    30

    mW

    T = 0 … 50°C

    Threshold voltage

    UTH


    1.80


    V


    Laser current

    IOP



    130

    mA

    Popt = 35mw

    Laser voltage

    UOP


    2.0


    V

    Popt = 35mw

    Electro-optical conversion ratio

    ηWP


    12


    %

    Popt = 20mw

    Slope efficiency

    ηS


    0.74


    W/A

    T = 20°C

    3dB modulation bandwidth

    ν3dB


    3


    MHz

    Popt  = 20mw(For ESD protection diodes)

    Relative noise intensity

    RIN


    -130

    -120

    dB/Hz

    Popt = 0.3 mW @ 1 GHz

    Wavelength tuning current



    0.01


    nm/mA


    Wavelength tuning temperature



    0.1


    nm/deg


    Thermistor

    Rthermal

    3


    5

    K/mW


    Side mode suppression


    30



    dB


    Beam divergence

    θ

    10


    25

    °

    Popt = 35mwFull 1/e2 bandwidth

    Spectral bandwidth

    Δν


    3


    MHz

    Popt = 35mw

    TEC current

    ITEC



    1000

    mA

    Proper heat sink required

    NTC thermistor


    9.5

    10.0

    10.5

    kΩ

    T= 25°C

    NTC temperature dependence


    10/exp[3892·(1/298K-1/TOP)]

    kΩ


     图片2.png

     


    Absolute Maximum

    storage temperature

    -40 … 125°C

    Operating temperature

    -20 … 80°C

    Electric power loss

    500mW

    Forward laser current

    130mA

    Backward current

    10mA

    Soldering temperature*

    270C°

    (*TEC temperature must be below 70°C)

     

    Spectrum

    6093a41a7d9d9.jpeg

     

    L-I-V curve

    6093a441ed53a.jpeg

     

     

    Temperature/wavelength tuning of TEC current

    6093a455e3fa2.jpeg

     

     

    Beam quality analysis

    6093a46400e57.jpeg

     

    Oxygen absorption lines

    6093a4fbf413d.jpeg

     

    Pin definition

    With TEC pin configuration

    可选配置表
    产品资料

    暂无资料

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