760nm high power single mode DFB laser 40mW (TO5 package oxygen detection)

760nm high power single mode DFB laser 40mW (TO5 package oxygen detection)

With optimized optical properties, the 760nm single-mode DFB is ideal for demanding sensing system applications. The innovative chip design has suppressed high-order longitudinal and transverse modes while providing linear polarization stability. The laser has high output power, narrow linewidth and good consistency and is currently favored by domestic scientific research customers. We currently have in stock wavelength 760nm DFB for TDLAS oxygen detection, 795nm VCSEL for Rb atomic clock experiments, and 852nm VCSEL for CS atomic cooling. The original model has been updated to PL-DFB-0760-40-A81-TO5

Product features：Ultra-high output power、 Narrow linewidth、 Internal TEC and thermistor 、 2 nm TEC tunability

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Application area：TDLAS oxygen analysis detection、 Optical coherence experiment

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Main parameters
General Parameters
Optional Configurations
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Main parameters

Core parameters

Dimension Drawing

General Parameters

Parameter

Parameter	Symbol	Min.	Typical	Max.	Unit	Note
Incident wavelength	λ_R	760	760.5	761	nm	T = 20°C, I_TEC = 0, P_OP= 35mw
Threshold current	I_TH		40		mA	T = 20°C
Output power	P_opt	20	30	40	mW	T = 0 … 50°C
Threshold voltage	U_TH		1.80		V
Laser current	I_OP			130	mA	P_opt= 35mw
Laser voltage	U_OP		2.0		V	P_opt= 35mw
Electro-optical conversion ratio	η_WP		12		%	P_opt= 20mw
Slope efficiency	η_S		0.74		W/A	T = 20°C
3dB modulation bandwidth	ν3dB	0.10			GHz	P_opt =35mw(For ESD protection diodes)
Relative noise intensity	RIN		-130	-120	dB/Hz	P_opt= 0.3 mW @ 1 GHz
Wavelength tuning current			0.01		nm/mA
Wavelength tuning temperature			0.1		nm/deg
Thermistor	R_thermal	3		5	K/mW
Side mode suppression		30			dB
Beam divergence	θ	10		25	°	Popt = 35mwFull 1/e² bandwidth
Spectral bandwidth	Δν		3		MHz	Popt = 35mw
TEC current	I_TEC			1000	mA	Proper heat sink required

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Absolute Maximum

storage temperature	-40 … 125°C
Operating temperature	-20 … 80°C
Electric power loss	500mW
Forward laser current	130mA
Backward current	10mA
Soldering temperature*	270C°
(*TEC temperature must be below 70°C)