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首页 Semiconductor Diodes DFB Laser Diode 760-1000nm DFB laser diode Single mode narrow linewidth high-power DFB laser 760/795/852/1512/2004nm output power 20/40mW 760nm high power single mode DFB laser 40mW (TO5 package oxygen detection)

    • 760nm high power single mode DFB laser 40mW (TO5 package oxygen detection)

    With optimized optical properties, the 760nm single-mode DFB is ideal for demanding sensing system applications. The innovative chip design has suppressed high-order longitudinal and transverse modes while providing linear polarization stability. The laser has high output power, narrow linewidth and good consistency and is currently favored by domestic scientific research customers. We currently have in stock wavelength 760nm DFB for TDLAS oxygen detection, 795nm VCSEL for Rb atomic clock experiments, and 852nm VCSEL for CS atomic cooling. The original model has been updated to PL-DFB-0760-40-A81-TO5

    产品特点Ultra-high output power、 Narrow linewidth、 Internal TEC and thermistor 、 2 nm TEC tunability

    产品货号A80011001

    应用领域TDLAS oxygen analysis detection、 Optical coherence experiment

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    Daisy

    电话：18602170419

    邮箱：moli@microphotons.com

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    主要参数
  • 核心参数

  • 尺寸图

    • Parameter

    Parameter

    Symbol

    Min.

    Typical

    Max.

    Unit

    Note

    Incident wavelength

    λR

    760

    760.5

    761

    nm

    T = 20°C, ITEC = 0, POP= 35mw

    Threshold current

    ITH


    40


    mA

    T = 20°C

    Output power

    Popt

    20

    30

    40

    mW

    T = 0 … 50°C

    Threshold voltage

    UTH


    1.80


    V


    Laser current

    IOP



    130

    mA

    Popt = 35mw

    Laser voltage

    UOP


    2.0


    V

    Popt = 35mw

    Electro-optical conversion ratio

    ηWP


    12


    %

    Popt = 20mw

    Slope efficiency

    ηS


    0.74


    W/A

    T = 20°C

    3dB modulation bandwidth

    ν3dB

    0.10



    GHz

    Popt  =35mw(For ESD protection diodes)

    Relative noise intensity

    RIN


    -130

    -120

    dB/Hz

    Popt = 0.3 mW @ 1 GHz

    Wavelength tuning current



    0.01


    nm/mA


    Wavelength tuning temperature



    0.1


    nm/deg


    Thermistor

    Rthermal

    3


    5

    K/mW


    Side mode suppression


    30



    dB


    Beam divergence

    θ

    10


    25

    °

    Popt = 35mwFull 1/e2 bandwidth

    Spectral bandwidth

    Δν


    3


    MHz

    Popt = 35mw

    TEC current

    ITEC



    1000

    mA

    Proper heat sink required

     图片2.png

     

     

    Absolute Maximum

    storage temperature

    -40 … 125°C

    Operating temperature

    -20 … 80°C

    Electric power loss

    500mW

    Forward laser current

    130mA

    Backward current

    10mA

    Soldering temperature*

    270C°

    (*TEC temperature must be below 70°C)

     

    Spectrum

    5dde38022c9fe.jpg

     

     

    L-I-V curve

    5dde382b65472.png

     

    Temperature/wavelength tuning of TEC current

    5dde386e680d4.png

     

    Beam quality analysis

    5dde389dc03bd (1).jpg

     

     

    Pin definition

    With TEC pin configuration

    5dde3a4f92f2b.png

     

    SN#

    PIN definition

    SN#

    PIN definition

    1

    LD+

    5

    Thermistor

    2

    LD-

    6

    Thermistor

    3

    Cooler-

    7

    PD+

    4

    Cooler+

    8

    PD-


    Oxygen absorption lines

    5dde3b769ab87.png

     


    Ordering Information

    PL-DFB-□□□□-☆-A8▽-TO5

    □□□□：wavelength

    0760：760nm

    1270：1270nm

    1532：1532nm

    1392：1392nm

    1512：1512nm

    1567: 1567nm

    *****

    1653.7: 1653.7nm

    ☆：output power

    A：10mW

    B：20mW

    C:  30mW

    D:  40mW

    ▽：wavelength tolerance

    1：±1nm

    2：±2nm

     

    可选配置表
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